铁掺杂四方、三方两相共存PZN-PZT陶瓷的Raman散射分析

Raman散射常用于研究温度变化时铁电体的各种相变,如铁电-顺电相变等,但是,利用Raman散射研究掺杂诱导的相变并不常见。本文采用Raman散射研究了铁掺杂Pb(Zn1/3Nb2/3)0.2(Zr0.5Ti0.5)0.8O3(PZN-PZT)铁电陶瓷中三方-四方共存现象。通过分析四方相E(3TO)和A1(3TO)模式与三方相Rl模式,确定了铁掺杂对PZN-PZT陶瓷中三方-四方共存结构的影响。这一结果,得到了XRD相分析的验证。因此,通过对Raman散射中三方-四方振动模式的分析,可以表征掺杂诱导的PZT基陶瓷中三方-四方相结构变化趋势。     

钢大气腐蚀锈层的红外、拉曼光谱研究

运用红外光谱、拉曼光谱分析的方法,对碳钢A₃和低合金钢10CrMoAl经青岛大气腐蚀的锈层样品,进行了比较测试,综合分析得出锈层中主要组成物相为α-Fe₂O₃,γ-FeOOH, α-FeOOH, δ-FeOOH,Fe₃O₄,以及各组成物相相对含量随腐蚀时间的变化情况。     

N型4H-SiC低温拉曼光谱特性

利用拉曼散射技术对N型4H-SiC单晶材料进行了30～300 K温度范围的光谱测量。实验结果表明,随着温度的升高,N型4H-SiC单晶材料的拉曼峰峰位向低波数方向移动,峰宽逐渐增宽。分析认为,晶格振动随着温度的升高而随之加剧,其振动恢复力会逐渐减小,使振动频率降低;原子相对运动会随温度的升高而加剧,使得原子之间及晶胞之间的相互作用减弱,致使声学模和光学模皆出现红移现象。随着温度的升高,峰宽逐渐增宽。这是由于随着温度的升高声子数逐渐增加,增加的声子进一步增加了散射概率,从而降低了声子的平均寿命,而声子的平均寿命与峰宽成反比,因此随着温度的升高峰宽逐渐增宽。声子模强度随温度升高呈现不同规律,E₂(LA),E₂(TA),E₁(TA)和A₁(LA)声子模随着温度升高强度单调增加,而E₂(TO),E₁(TO)和A₁(LO)声子模强度出现了先增后减的明显变化,在138 K强度出现极大值。分析认为造成原因是由于当温度高于138 K时,高能量的声子分裂成多个具有更低能量的声子所致。     

铌酸钾钠基无铅压电陶瓷的X射线衍射与相变分析

分析了斜方相、四方相铌酸钾钠基无铅压电陶瓷材料的结构和X射线衍射图谱的特点. 对于铌酸钾钠基压电材料斜方相结构, 从构成晶胞的一个单斜原胞进行分析, 计算出X射线衍射谱上每个衍射角附近的衍射峰数目和相对强度. 提出了2θ在20°—60°范围内根据(1 0 2)衍射峰(52°附近)和(1 2 1)衍射峰(57°附近)劈裂的数目区分斜方和四方相的新方法. 对于多晶陶瓷粉末, 可以更简便的由22°(或45°)附近前后峰的相对高低来判断斜方、四方相. 关键词： 铌酸钾钠 无铅压电陶瓷 X射线衍射 相变     

(1-x)(K0.5Na0.5)NbO3-xSrTiO3陶瓷的弛豫铁电性能

通过对（1-x）（K_0.5Na_0.5）NbO₃-xSrTiO₃（0≤x≤0.15）陶瓷的相组成、晶体结构和介电性能的研究发现,该陶瓷为单一的钙钛矿结构相.当x含量较小（x＜0.1）时为正交相结构,x≥0.1时转变为四方相结构.随着SrTiO₃掺杂量的增加,样品的致密度增加,样品由正常铁电相逐渐向弥散铁电相转变,且相 关键词： 弛豫铁电体 0.5Na_0.5）NbO₃铁电陶瓷')" href="#">（K_0.5Na_0.5）NbO₃铁电陶瓷 3掺杂')" href="#">SrTiO₃掺杂 相变温度     

稻瘟病、玉米锈病和蚕豆锈病叶的傅里叶变换红外光谱研究

利用傅里叶变换红外光谱(FTIR)研究了水稻、玉米、蚕豆正常叶和稻瘟病叶、玉米和蚕豆锈病叶。结果显示,其红外光谱均主要由多糖、蛋白质的振动吸收谱带组成。光谱整体相似,差异主要表现为光谱峰位、峰形及吸收强度比。三种作物正常叶的二阶导数光谱在1 750～1 500 cm-1范围内的相关系数差异明显。水稻正常叶与稻瘟病叶的吸收强度比A_{1 056}/A_{1 652};蚕豆正常叶与锈病叶的吸收强度比A_{1 652}/A_{2 920};玉米正常叶和锈病叶(非病斑部位)吸收强度比A_{1 056}/A_{2 920},玉米正常叶和玉米锈病叶(病斑处)吸收强度比A_{1 652}/A_{2 920},均呈现出病变叶吸收强度比正常叶要小的趋势。表明他们之间的多糖和蛋白质的含量存在差异。     

0.5Ba(Ti0.8Zr0.2)O3-0.5(Ba0.7Ca0.3)TiO3压电薄膜的摩擦、磨损性能

具有准同型相界组分的0.5Ba(Ti_0.8Zr_0.2)O₃-0.5(Ba_0.7Ca_0.3)TiO₃ (BZT-0.5BCT)陶瓷, 表现出优异的铁电、压电性能, 作为一种具有潜在应用前景的无铅压电材料得到广泛关注. 本文采用溶胶-凝胶方法在Si(100)基底上制备了BZT-0.5BCT压电薄膜. 使用原子力显微镜和扫描电子显微镜测量得到样品的形貌图, 形貌图表明该方法制备的无铅压电薄膜表面光滑, 晶粒大小均匀、呈半球形, 直径为80–100 nm, 厚度为1.7 μm, 膜的内部有气孔.摩擦力实验表明, 压电薄膜样品与硅针尖之间存在静电力的作用, 导致其摩擦力远大于硅针尖与SiO₂之间的摩擦力, 但是两者的摩擦系数基本相同.划痕实验表明, BZT-0.5BC薄膜具有很强的法向承载能力, 但是切向抗磨损能力差, 样品的平均弹性模量为23.64 GPa± 5 GPa, 其硬度为2.7–4 GPa, 两者均略低于压电陶瓷Pb(Zr, Ti)O₃材料的体态值. 关键词： BZT-BCT薄膜 纳米摩擦力 纳米压痕 纳米划痕     

四方和正交以及单斜相K0.5Na0.5NbO3的结构稳定性和电子结构的第一性原理研究

采用基于密度泛函理论框架下的第一性原理超原胞方法和虚晶近似方法, 在局域密度近似和广义梯度近似下, 对四方和正交以及单斜相K_0.5Na_0.5NbO₃的能量和原子结 构以及电子结构进行了系统的研究. 计算结果表明三种K_0.5Na_0.5NbO₃相的能量差别较小, 这与实验上它们之间容易发生相转化是一致的. 进一步发现单斜相的能量比四方相和正交相低, 说明单斜相结构更加稳定, 并且理论计算的结构参数与实验值符合得很好. 电子结构结果也表明单斜相的键合作用比四方相和正交相键合作用更强, 进一步说明单斜相结构更加稳定. 关键词： 铌酸钾钠 四方相 单斜相 密度泛函理论     

K0.5Bi0.5TiO3—Na0.5Bi0.5TiO3系统铁电陶瓷相界的X射线研究

用X射线衍射方法测定了K_0.5Bi_0.5TiO₃—Na_0.5Bi_0.5TiO₃系统不同组分试样的点阵常数和相变温度,确定了四方-三方相界组成。给出了K_0.5Bi_0.5TiO₃和Na_0.5Bi_0.5TiO₃的多晶X射线衍射数据。 关键词：     

La诱导(Pb(1-3x/2)Lax)(Zr0.5Sn0.3Ti0.2)O3反铁电介电弛豫研究

采用标准电子陶瓷工艺制备了(Pb_(1-3x/2)La_x)(Zr_0.5Sn_0.3Ti_0.2)O₃(PLZST,0.00≤x≤0.18)反铁电陶瓷,利用X射线衍射、不同频率下弱场介电温谱、强场下的极化强度-电场(P-E)测试研究了材料相结构和电学性能.实验结果发现,随La含量x增大,室温下材料由铁电三方相(关键词： 反铁电陶瓷 介电频率色散 相变弥散 介电弛豫     

Finite-temperature properties of Pb(Zr1-xTi(x))O3 alloys from first principles

A first-principles-derived approach is developed to study finite-temperature properties of Pb(Zr1-xTix)O3 (PZT) solid solutions near the morphotropic phase boundary (MPB). Structural and piezoelectric predictions are in excellent agreement with experimental data and direct first-principles results. A low-temperature monoclinic phase is confirmed to exist, and is demonstrated to act as a bridge between the well-known tetragonal and rhombohedral phases delimiting the MPB. A successful explanation for the large piezoelectricity found in PZT ceramics is also provided.     

Phase transformation in (0.90−x)Pb(Mg1/3Nb2/3)O3-xPbTiO3-0.10PbZrO3 piezoelectric ceramic: X-ray diffraction and Raman investigation

Piezoelectric ceramics with compositions of (0.90−x)Pb(Mg_1/3Nb_2/3)O₃-xPbTiO₃-0.10PbZrO₃, x=0.28, 0.31, 0.34, 0.37, 0.40 and 0.43, were prepared using the conventional columbite precursor method, and their structural phase transformation and piezoelectric behaviors near the morphotropic phase boundary (MPB) have been systematically investigated as a function of PbTiO₃ content. X-ray diffraction (XRD) results demonstrate that the structure of the ceramics experiences a gradual transition process from rhombohedral phase to tetragonal phase with the increasing of PbTiO₃ content, and that compositions with x=0.34-0.40 lie in the MPB region of this ternary system. A Raman spectra investigation of the ceramic samples testified to the transformation process of rhombohedral phase to tetragonal phase by comparing the relative intensities of tetragonal E(2TO₁) mode and rhombohedral phase R_h mode. The structure information was also correlated to the parabola change of the piezoelectric constant; the maximum piezoelectric constants were obtained near the MPB region.     

Na0.5K0.5NbO3-BiFeO3 lead-free piezoelectric ceramics

Lead-free (Na_0.5K_0.5)NbO₃-based piezoelectric ceramics were successfully fabricated by substituting with a small amount of BiFeO₃ (BF). Difficulty in sintering of pure NKN ceramics can be eased by adding a few molar percent of BF, and the crystalline structure is also changed, leading to a morphotropic phase boundary (MPB) between ferroelectric orthorhombic and rhombohedral phases. The MPB exists near the 1-2 mol% BF-substituted NKN compositions, exhibiting enhanced ferroelectric, piezoelectric, and electromechanical properties of P_r=23.3 μC/cm², d₃₃=185 pC/N, and k_p=46%, compared to an ordinarily sintered pure NKN ceramics. The MPB composition has a Curie temperature of ∼370 °C, comparable to that of some commercial PZT materials.     

Phase transition, structural and electrical properties of Pb(Zn1/3Nb2/3)O3-doped Pb(Ni1/3Nb2/3)O3-PbTiO3 ceramics prepared by solid-state reaction method

Phase pure perovskite (1−x−y)Pb(Ni_1/3Nb_2/3)O₃-xPb(Zn_1/3Nb_2/3)O₃-yPbTiO₃ (PNN-PZN-PT) ferroelectric ceramics were prepared by conventional solid-state reaction method via a B-site oxide mixing route. The PNN-PZN-PT ceramics sintered at the optimized condition of 1185 °C for 2 h exhibit high relative density and rather homogenous microstructure. With the increase of PbTiO₃ (PT) content, crystal structure and electrical properties of the synthesized PNN-PZN-PT ceramics exhibit successive phase transformation. A morphotropic phase boundary (MPB) is supposed to form in (0.9−x)PNN-0.1PZN-xPT at a region of x=32-36 mol% confirmed by X-ray diffraction (XRD) measurement and dielectric measurement. The MPB composition can be pictured as providing a “bridge” connecting rhombohedral ferroelectric (FE) phase and tetragonal one since crystal structure of the MPB composition is similar to both the rhombohedral and tetragonal lattices. Dielectric response of the sintered PNN-PZN-PT ceramics also exhibits successive phase-transition character. 0.64PNN-0.1PZN-0.26PT exhibits broad, diffused and frequency dependent dielectric peaks indicating a character of diffused FE-paraelectric (PE) phase transition of relaxor ferroelectrics and 0.40PNN-0.1PZN-0.50PT exhibits narrow, sharp and frequency independent dielectric peaks indicating a character of first-order FE-PE phase transition of normal ferroelectrics. The FE-PE phase transition of 0.56PNN-0.1PZN-0.34PT is nearly first-order with some diffused character, which also exhibits the largest value of piezoelectric constant d₃₃ of 462pC/N.     

压应力场下PLZT铁电陶瓷的原位Raman观测

铁电陶瓷材料在外场加载下的畴变所引起的材料结构变化,是导致材料性能衰变和破坏的主要原因,Raman光谱技术是一种研究铁电材料畴变和微结构变化的无损伤性及原位微区的观测方法。采用传统固相法合成Zr/Ti原子比为53/478的掺镧锆钛酸铅(PLZT)铁电陶瓷材料 ,采用X射线衍射仪和扫描电子显微镜及Precision_LC铁电测试系统分别对试样进行结构形貌表征和铁电物理性能测试,利用自制的应力加载装置与Raman光谱仪联用,实现不同压应力场作用下试样的原位Raman谱测试,考察和分析Raman谱软模E(2TO)和E(3TO+2LO)+B1的峰强和峰位随散射偏振方向的变化规律。结果表明,不同压应力场下Raman软模E(2TO)和E(3TO+2LO)+B1的峰强均随散射偏振角度呈现正弦式的变化规律,在60°偏振角度上软模峰强最大,在150°偏振角度上软模峰强最小。随着压应力场的增加,在0°和60°偏振角度获得的软模峰强随应力场的增加呈现明显的下降趋势,而在90°和150°偏振角度获得的软模峰强基本不变。压应力场变化对PLZT陶瓷的Raman软模E(2TO)和E(3TO+2LO)+B1的峰位均不产生影响。     

Raman spectroscopic study of phase transitions in undoped morphotropic PbZr1−xTixO3

Several PbZr_1−xTi_xO₃ (PZT) compositions in the proximity of the morphotropic phase boundary (MPB) were examined by means of Raman spectroscopy in the 15–800 K temperature range. Previous studies performed by other researchers using various techniques evidenced that, in the phase diagram of PZT, areas with rhombohedral/monoclinic and tetragonal/monoclinic phases coexist across the MPB. For these compositions, either long‐range or short‐range symmetry ordering of the monoclinic phase should be considered, so that no true rhombohedral–monoclinic–tetragonal phase boundary exists. In addition, the onset of antiferrodistortive phase transitions between high‐T and low‐T perovskite phases has been predicted by ab initio calculations and experimentally reported. In the present work, low‐T and high‐T Raman scattering spectra were collected on undoped PbZr_1−xTi_xO₃ with compositions x = 0.42, 0.45, 0.465, 0.48 and 0.53 in an attempt to clarify the current open issues on the phase diagram of PZT. Spectra clearly belonging to the respective phases were observed in the rhombohedral, monoclinic and tetragonal areas, thus confirming that monoclinic ordering is long‐range only for a narrow range of compositions. Raman measurements at cryogenic temperatures allowed detecting all predicted low‐T phases, including the tetragonal one. These results are in good agreement with both ab initio calculations and experimental results obtained by other authors on the same compositions. Copyright © 2010 John Wiley & Sons, Ltd.     

(002)取向AIN薄膜的Raman光谱

（００２）取向ＡＩＮ薄膜的Ｒａｍａｎ光谱赵永年王波何志罗微邹广田（吉林大学超硬材料国家重点实验室长春１３００２３）ＲａｍａｎＳｐｅｃｔｒａｏｆＡＩＮＦｉｌｍｓＯｒｉｅｎｔｅｄｉｎ（００２）ＺｈａｏＹｏｎｇｎｉａｎ，ＷａｎｇＢｏ，ＨｅＺｈｉ，ＬｕｏＷｅ...     

自发有序Ga_（0．5）In_（0．5）P合金的拉曼光谱研究

自发有序Ｇａ＿（０．５）Ｉｎ＿（０．５）Ｐ合金的拉曼光谱研究李国华，刘振先，韩和相，汪兆平，董建荣（中国科学院半导体研究所，半导体扭晶格国家重点实验室北京１０００８３）（中国科学院半导体研究所，半导体材料科学实验室北京１０００８３））ＲａｍａｎＳｃａ...     

New crystallographic dielectric phase boundary in K0.5Na0.5NbO3‐based lead‐free ceramics

0.979K_0.5Na_0.5Nb_1‐xSb_x O₃‐0.021Bi_0.5Na_0.5TiO₃ (KNNSx ‐BNT) lead‐free piezoelectric ceramics were fabricated by conventional solid state reaction technique, and their phase transition and electrical properties were studied. With the increase of x, the rhombohedral‐orthorhombic phase transition temperature of the ceramics increases. Finally, both the rhombohedral‐orthorhombic and orthorhombic‐tetragonal phase transitions of the ceramics were modified to be around room tempera‐ ture when about 6% Sb were substituted for the Nb site, resulting in the formation of a new phase boundary separating rhombohedral and tetragonal phases. The formation of the new phase boundary results in excellent properties for the ceramics, that is, the KNNS0.05‐BNT ceramic shows an enhancement in piezoelectric properties: d₃₃ = 380 pC/N and k_P = 0.438. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)