Effects of proton irradiation at different incident angles on InAlAs/InGaAs InP-based HEMTs

InP-based high electron mobility transistors(HEMTs) will be affected by protons from different directions in space radiation applications. The proton irradiation effects on InAlAs/InGaAs hetero-junction structures of InP-based HEMTs are studied at incident angles ranging from 0 to 89.9° by SRIM software. With the increase of proton incident angle, the change trend of induced vacancy defects in the InAlAs/InGaAs hetero-junction region is consistent with the vacancy energy loss trend of incident protons. Namely, they both have shown an initial increase, followed by a decrease after incident angle has reached 30°. Besides, the average range and ultimate stopping positions of incident protons shift gradually from buffer layer to hetero-junction region, and then go up to gate metal. Finally, the electrical characteristics of InP-based HEMTs are investigated after proton irradiation at different incident angles by Sentaurus-TCAD. The induced vacancy defects are considered self-consistently through solving Poisson's and current continuity equations. Consequently, the extrinsic transconductance, pinch-off voltage and channel current demonstrate the most serious degradation at the incident angle of 30?, which can be accounted for the most severe carrier sheet density reduction under this condition.     

Proton irradiation effect on SCDs

The Low Energy X-ray Telescope is one of the main payloads on the Hard X-ray Modulation Telescope satellite.Swept charge devices(SCDs)are selected as detectors for the Low Energy X-ray Telescope.As SCDs are sensitive to proton irradiation,irradiation tests were carried out on the HI-13 accelerator at the China Institute of Atomic Energy.The beam energy was measured to be 10 MeV at the SCD.The proton fluence delivered to the SCD was 3×108protons/cm2over two hours.By comparing the performance before and after irradiation,it is concluded that proton irradiation affects both the dark current and the charge transfer inefficiency of the SCD.The energy resolution of the proton-irradiated SCD is 212 eV@5.9 keV at-60?C,while it before irradiated is 134 eV.Moreover,better performance can be reached by lowering the operating temperature of the SCD in orbit.     

Proton radiation effect on GaAs/AlGaAs core–shell ensemble nanowires photo-detector

We demonstrate that the GaAs/AlGaAs nanowires(NWs) ensemble is fabricated into photo-detectors. Current–voltage(I–V) characteristics are measured on Ga As/Al Ga As core–shell ensemble NW photo-detectors at room-temperature before and after 1-MeV proton irradiation with fluences from 1.0 × 10~(13) cm~(-2) to 5.0 × 10~(14) cm~(-2). The degradation of photocurrent suggests that the point defects induced by proton radiation could cause both carrier lifetime and carrier mobility to decrease synchronously. Comparing with a GaAs quantum well, the degradations of light and dark current for the irradiated NWs photo-detector indicate that NWs material is a preferable potential candidate for space applications.     

Correlation between Displacement Damage Dose and Proton Irradiation Effects on GaInP/GaAs/Ge Space Solar Cells

The irradiation effects of 0.28-2.80 MeV protons on GalnP/GaAs/Ge solar cells have been analysed, and then correlated with the displacement damage dose. The results of I-V and spectral response measurements, combined with the SRIM-derived vacancies produced rates, show that the degradation of the solar cells is largely determined by the displacement damage of the GaAs sub-cell. Thus the SRIM-derived NIEL values for protons in the GaAs sub-cell are used to calculate the displacement damage dose. It is shown that the irradiation effects of the solar cells caused by protons at different energies are correlated well with the aid of displacement damage dose.     

Effect of vacancy defect clusters on the optical property of the aluminium filter used for the space solar telescope

We investigate the microstructures of the pure aluminium foil and filter used on the space solar telescope, irradiated by photons with different doses. The vacancy defect clusters induced by proton irradiation in both samples are characterized by transmission electron microscopy, and the density and the size distribution of vacancy defect clusters are determined. Their transmittances are measured before and after irradiating the samples by protons with energy E=100~keV and dose φ =6× 10¹¹/mm². Our experimental results show that the density and the size of vacancy defect clusters increase with the increase of irradiation doses in the irradiated pure aluminium foils. As irradiation dose increases, vacancies incline to form larger defect clusters. In the irradiated filter, a large number of banded void defects are observed at the agglomerate boundary, which results in the degradation of the optical and mechanical performances of the filter after proton irradiation.     

Laser-induced damage threshold in HfO_2/SiO_2 multilayer films irradiated by β-ray

Post-processing can effectively improve the resistance to laser damage in multilayer films used in a high power laser system. In this work, HfO_2/SiO_2 multilayer films are prepared by e-beam evaporation and then β-ray irradiation is employed as the post-processing method. The particle irradiation affects the laser induced damage threshold(LIDT),which includes defects, surface roughness, packing density and residual stress. The residual stress that is relaxed during irradiation changes from compressive stress into tensile stress. Our results indicate that appropriate tensile stress can improve LIDT remarkably. In view of the fact that LIDT rises from 8 J/cm~2 to 12 J/cm~2, i.e., 50% increase, after the film has been irradiated by 2.2×10~(13)/cm~2 β-ray, the particle irradiation can be used as a controllable and desirable postprocessing method to improve the resistance to laser induced damage.     

Photo-transmutation based on resonance γ-ray source

High intensity γ-ray source can be obtained through resonance reaction induced by protons. In this work, the possibility of using such high intensity MeV-range γ-ray source to transmute nuclear waste is investigated through Mont Carlo simulation.~(197) Au(γ, n)~(196)Au experiment is performed to obtain the transmutation rate and compared with the simulation result. If the current of the proton beam is 10 mA at the resonance energy of 441 keV, with the γ photons emitted from~7 Li(p, γ)~8 Be, then the corresponding transmutation yield for~(129)I in 2π direction can reach 9.4 × 10~9 per hour. The result is compared with that of LCS γ-ray source.     

A comparison of ionizing radiation damage in CMOS devices from ^60Co gamma rays,electrons and protons

Radiation hardened CC4007RH and non-radiation hardened CC4011 devices were irradiated using ^60Co gamma rays, 1 MeV electrons and 1-9 MeV protons to compare the ionizing radiation damage of the gamma rays with the charged particles. For all devices examined, with experimental uncertainty, the radiation induced threshold voltage shifts （△Vth） generated by ^60Co gamma rays are equal to that of 1 MeV electron and 1-7 MeV proton radiation under 0 gate bias condition. Under 5 V gate bias condition, the distinction of threshold voltage shifts （△Vth） generated by ^60Co gamma rays and 1 MeV electrons irradiation are not large, and the radiation damage for protons energy the proton has, the less serious below 9 MeV is always less than the radiation damage becomes. that of ^60Co gamma rays. The lower     

Effect of defects properties on InP-based high electron mobility transistors

The performance damage mechanism of InP-based high electron mobility transistors(HEMTs) after proton irradiation has been investigated comprehensively through induced defects.The effects of the defect type, defect energy level with respect to conduction band ET, and defect concentration on the transfer and output characteristics of the device are discussed based on hydrodynamic model and Shockley–Read–Hall recombination model.The results indicate that only acceptorlike defects have a significant influence on device operation.Meanwhile, as defect energy level ETshifts away from conduction band, the drain current decreases gradually and finally reaches a saturation value with ETabove 0.5 eV.This can be attributed to the fact that at sufficient deep level, acceptor-type defects could not be ionized any more.Additionally,the drain current and transconductance degrade more severely with larger acceptor concentration.These changes of the electrical characteristics with proton radiation could be accounted for by the electron density reduction in the channel region from induced acceptor-like defects.     

A study of radiation effects of 9 and 12 MeV protons on Chinese CMOS image sensor degradation

The 9 and 12 MeV proton irradiations of the Chinese CMOS Image Sensor in the fluence range from 1×109to 4×1010 cm-2and 1×109 to 2×1012 cm-2 have been carried out respectively. The color pictures and dark output images are captured, and the average brightness of dark output images is calculated. The anti-irradiation fluence thresholds for 9 and 12 MeV protons are about 4×1010 and 2×1012 cm-2, respectively. These can be explained by the change of the concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation program.     

基于4晶体管像素结构的互补金属氧化物半导体图像传感器总剂量辐射效应研究

对基于4晶体管像素结构互补金属氧化物半导体图像传感器的电离总剂量效应进行了研究,着重分析了器件的满阱容量和暗电流随总剂量退化的物理机理.实验的总剂量为200 krad(Si),测试点分别为30 krad(Si),100 krad(Si),150 krad(Si)和200 krad(Si),剂量率为50 rad(Si)/s.实验结果发现随着辐照总剂量的增加,器件的满阱容量下降并且暗电流显著增加.其中辐照使得传输门沟道掺杂分布发生改变是满阱容量下降的主要原因,而暗电流退化则主要来自于浅槽隔离界面缺陷产生电流和传输门-光电二极管交叠区产生电流.实验还表明样品器件的转换增益在辐照前后未发生明显变化,并且与3晶体管像素结构不同,4晶体管像素结构的互补金属氧化物半导体图像传感器没有显著的总剂量辐照偏置效应.     

快重离子辐照对非晶态SiO2薄膜光致发光谱的影响

用湿氧化法在单晶硅表面生长了非晶态SiO2薄膜,再用高能Pb和Xe离子对薄膜进行辐照,最后用荧光光谱分析了辐照参数(剂量、电子能损值)与发光特性改变的相关性.研究发现,快重离子辐照能显著影响薄膜的发光特性,进一步分析显示,辐照导致了SiO2薄膜内O-Si-O缺陷、缺氧缺陷和非桥式氧空位缺陷的产生,且缺氧缺陷和非桥式氧空...     

质子辐照下正照式和背照式图像传感器的单粒子瞬态效应

CMOS图像传感器应用于空间任务时容易受到质子单粒子效应影响.本文采用商用正照式(FSI)和背照式(BSI)CMOS图像传感器开展了不同能量的质子辐照实验,实验中通过在线测试方法分析质子单粒子效应.其中,质子能量最高为200 Me V,总注量为10¹⁰ particle/cm~2,结果未发现外围电路的单粒子效应,但观察到像素阵列出现不同形状的单粒子瞬态亮斑.通过提取瞬态亮斑沉积能量和尺寸大小两个特征参数,比较了不同能量质子对瞬态亮斑特征的影响,以及FSI和BSI中瞬态亮斑特征的差异.最后,结合仿真方法,与实验结果进行比较,预测了质子在CMOS图像传感器像素单元产生瞬态亮斑的能量沉积分布.仿真结果验证了光电二极管耗尽区厚度减小和外延层减薄是导致BSI图像传感器中质子能量沉积分布左移的主要因素.     

~(60)Co-γ射线辐照CMOS有源像素传感器诱发暗信号退化的机理研究

对某国产0.5μm CMOS(Complementary Metal Oxide Semiconductor,互补金属氧化物半导体)N阱工艺CMOS有源像素传感器的电离总剂量效应进行了研究,通过60Co-γ射线辐照试验,着重分析了对辐射最敏感的暗信号和暗信号非均匀性随总剂量退化的物理机理.实验发现,随着辐照剂量的增加,暗信号和暗信号非均匀性显著退化,并且静态偏置条件下器件的辐射损伤最大.暗信号退化的主要原因是光电二极管pn结和复位晶体管源端N+/Psub结表面边界周围的SiO2产生了大量的界面态;暗信号非均匀性显著退化是由于光电二极管的暗信号增大引起.上述工作可为深入研究CMOS有源像素传感器的抗辐射加固及其辐射损伤评估提供参考.     

Evolution of optical properties and molecular structure of PCBM films under proton irradiation

Low-energy proton irradiation effects on the optical properties and the molecular structure of phenyl-C₆₁-butyric acid methyl ester (PCBM) are studied in this work. The PCBM films are irradiated by 100-keV proton beams with fluences of 5×10¹² p/cm², 5×10¹³ p/cm², and 5×10¹⁴ p/cm², respectively. The photoluminescence (PL) peaks of the post-irradiated PCBM films show a progressive decrease in the peak intensity as the proton fluences increase, which can be attributed to the deep defect levels induced by proton irradiation. Additionally, a slight blue-shift in the PL spectrum is also observed at a proton fluence of 5×10¹⁴ p/cm². The underlying mechanism can be traced back to the lift of the lowest unoccupied molecular orbital (LUMO) level, which is caused by the attachment of methoxy radicals on ortho position of the phenyl ring in the post-irradiated PCBM structure. This work is of significance in understanding the radiation hardness and the damage mechanism of the PCBM film in radiation environments, which is essential before it is put into practical application in space.     

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建立了6Li D转换器中14Me V中子源强的计算模型,对转换器不带辐照样品和分别带2、3、4个辐照样品时的中子源强进行了计算,对转换器产生的中子和来自于堆芯的中子在样品内的能谱和中子注量率进行了计算。结果表明,辐照管内充水和氦气时,辐照样品内由转换器产生的能量大于13Me V的中子分别占能量在1Me V以上中子的25.7%、24.6%,辐照样品内由堆芯产生的能量大于13Me V的中子仅占能量在1Me V以上中子的10·5左右,样品内14Me V中子源强分别可达4.31×1013nT·s·1、3.34×1013 nT·s·1;中子注量率分别可达2.66×1010nT·cm·2·s·1、3.53×1010nT·cm·2·s·1。     

Radiation effects of electrons and protons on the ceramic oxide superconductor YBaCuO

The irradiation of the high T_c superconducting material YBaCuO has been carried out by using 200 keV proton, and 400 keV and 8 MeV electron beams. The temperature of zero resistance increases from 86.7 to 89.8 K with proton implantation while 8 MeV electron irradiation reduces the zero resistance temperature by 3 K with an irradiation dose of 2.25×10¹⁴e^-/cm². However, wich an irradiation dose of 1.35×10¹⁵e^-/cm² the 8 MeV electron beam can make the superconductor become insulating. The in situ examination of a high resolution transmission electron microscope has proved that the amorphous region in the system has ordered arrangement whereas the crystalline region turns disordered under 400 keV electron irradiation with very high doses up to 10²⁶ e^-/cm². The experiments demostrate that proton and electron irradiations exhibit quite different effects both in its structure and property.     

Performance of dual-band short-or mid-wavelength infrared photodetectors based on InGaAsSb bulk materials and InAs/GaSb superlattices

In this paper,we demonstrate bias-selectable dual-band short-or mid-wavelength infrared photodetectors based on In_(0.24)Ga_(0.76)As_(0.21)Sb_(0.79)bulk materials and InAs/GaSb type-II superlattices with cutoff wavelengths of 2.2μm and 3.6μm,respectively.At 200 K,the short-wave channel exhibits a peak quantum efficiency of 42%and a dark current density of5.93×10~(-5)A/cm~2at 500 mV,thereby providing a detectivity of 1.55×10~(11)cm·Hz~(1/2)/W.The mid-wave channel exhibits a peak quantum efficiency of 31%and a dark current density of 1.22×10~(-3)A/cm~2at-300 mV,thereby resulting in a detectivity of 2.71×10~(10)cm·Hz~(1/2)/W.Moreover,we discuss the band alignment and spectral cross-talk of the dual-band n-i-p-p-i-n structure.     

Study on irradiation-induced defects in GaAs/AlGaAs core–shell nanowires via photoluminescence technique

To gain a physical insight into the radiation effect on nanowires(NWs), the time resolved photoluminescence(TRPL)technique is used to investigate the carrier dynamic behaviors in GaAs/AlGaAs core–shell NWs before and after 1-MeV proton irradiation with fluences ranging from 1.0 × 10~(12) cm~(-2) to 3.0 × 10~(13) cm~(-2). It is found that the degradations of spectral peak intensity and minority carrier lifetime show similar trends against irradiation fluence, which is closely related to the displacement defects induced by irradiation. We also find that the proton irradiation-induced defects behave as Shockley–Read–Hall(SRH) recombination center trapping free carriers. Finally, the defect concentration could be estimated through measuring the minority carrier lifetime.