Optical emission spectroscopy study on depositionprocess of microcrystalline silicon

This paper reports that the optical emission spectroscopy (OES) is used to monitor the plasma during the deposition process of hydrogenated microcrystalline silicon films in a very high frequency plasma enhanced chemical vapour deposition system. The OES intensities (SiH\sj{*}, H微晶硅 VHF-PECVD 发射光谱学 薄膜物理学microcrystalline silicon, VHF-PECVD, optical emission spectroscopy2005-11-092005-11-092005-12-12This paper reports that the optical emission spectroscopy （OES） is used to monitor the plasma during the deposition process of hydrogenated microcrystalline silicon films in a very high frequency plasma enhanced chemical vapour deposition system. The OES intensities （Sill^＊, H^＊ and H^＊β） are investigated by varying the deposition parameters. The result shows that the discharge power, silane concentrations and substrate temperature affect the OES intensities. When the discharge power at silane concentration of 4% increases, the OES intensities increase first and then are constant, the intensities increase with the discharge power monotonously at silane concentration of 6%. The SiH^＊ intensity increases with silane concentration, while the intensities of H^＊α and H^＊β increase first and then decrease. When the substrate temperature increases, the SiH^＊ intensity decreases and the intensities of H^＊α and H^＊β are constant. The correlation between the intensity ratio of IH^＊α/ISiH^＊ and the crystalline volume fraction （Xc） of films is confirmed.     

Effects of deposition pressure and plasma power on the growth and properties of boron-doped microcrystalline silicon films

Using diborane as doping gas, p-doped μc-Si：H layers are deposited by using the plasma enhanced chemical vapour deposition （PECVD） technology. The effects of deposition pressure and plasma power on the growth and the properties of μc-Si：H layers are investigated. The results show that the deposition rate, the electrical and the structural properties are all strongly dependent on deposition pressure and plasma power. Boron-doped μc-Si：H films with a dark conductivity as high as 1.42 Ω^-1·cm^-1 and a crystallinity of above 50% are obtained. With this p-layer, μc-Si：H solar cells are fabricated. In addition, the mechanism for the effects of deposition pressure and plasma power on the growth and the properties of boron-doped μc-Si：H layers is discussed.     

激光冷却SH~–阴离子的理论研究

本文采用多组态相互作用及Davidson修正方法和全电子基组计算了SH~-阴离子的X~1∑~+,a~3∏和A~1∏态的势能曲线、电偶极矩和跃迁偶极矩.计算的光谱常数与实验值及已有的理论值符合得很好.在计算中考虑了自旋-轨道耦合效应.计算得到a~3∏_1(v'=0)?X~1∑_(0+)~+(v"=0)和A~1∏_1(v'=0)?X~1Σ_(0+)~+(v"=0)跃迁具有高对角分布的弗兰克-康登因子,分别为0.9990和0.9999;计算得到a~3∏_1和A~1∏_1态的自发辐射寿命分别为1.472和0.188 ms.A~1∏_1?X~1∑_(0+)~+跃迁存在中间态a~3∏_(0+)和a~3∏_1,但中间态对激光冷却SH~-阴离子的影响可以忽略.分别利用a~3∏_1(v'=0)? X~1∑_(0+)~+(v"=0)和A~1∏_1(v'=0)? X~1∑_(0+)~+(v"=0)跃迁构建了准闭合的能级系统,冷却所需的激光波长分别为492.27和478.57 nm.最后预测了激光冷却SH~-阴离子能达到的多普勒温度和反冲温度.这些结果为进一步实验提供了理论参数.     

The effect of initial discharge conditions on the properties of microcrystalline silicon thin films and solar cells

This paper studies the effects of silane back diffusion in the initial plasma ignition stage on the properties of microcrystalline silicon ($\mu $c-Si:H) films by Raman spectroscopy and spectroscopic ellipsometry, through delaying the injection of SiH7280N, 7830G, 8115Hhttp://cpb.iphy.ac.cn/CN/10.1088/1674-1056/19/5/057205https://cpb.iphy.ac.cn/CN/article/downloadArticleFile.do?attachType=PDF&id=111771back diffusion, microcrystalline silicon, thin film, Raman crystallinityProject supported by the State Key Development Program for Basic Research of China (Grant No.~2006CB202601).This paper studies the effects of silane back diffusion in the initial plasma ignition stage on the properties of microcrystalline silicon ($\mu $c-Si:H) films by Raman spectroscopy and spectroscopic ellipsometry, through delaying the injection of SiH$_{4}$ gas to the reactor before plasma ignition. By comparing with standard discharge condition, delayed SiH$_{4}$ gas condition could prevent the back diffusion of SiH$_{4}$ from the reactor to the deposition region effectively, which induced the formation of a thick amorphous incubation layer in the interface between bulk film and glass substrate. Applying this method, it obtains the improvement of spectral response in the middle and long wavelength region by combining this method with solar cell fabrication. Finally, results are explained by modifying zero-order analytical model, and a good agreement is found between model and experiments concerning the optimum delayed injection time.back;diffusion;microcrystalline;silicon;thin;film;Raman;crystallinityThis paper studies the effects of silane back diffusion in the initial plasma ignition stage on the properties of microcrystalline silicon(μc-Si:H) films by Raman spectroscopy and spectroscopic ellipsometry,through delaying the injection of SiH4 gas to the reactor before plasma ignition.Compared with standard discharge condition,delayed SiH4 gas condition could prevent the back diffusion of SiH4 from the reactor to the deposition region effectively,which induced the formation of a thick amorphous incubation layer in the interface between bulk film and glass substrate.Applying this method,it obtains the improvement of spectral response in the middle and long wavelength region by combining this method with solar cell fabrication.Finally,results are explained by modifying zero-order analytical model,and a good agreement is found between the model and experiments concerning the optimum delayed injection time.     

Influence of the total gas flow rate on high rate growth microcrystalline silicon films and solar cells

This paper reports that high-rate-deposition of microcrystalline silicon solar cells was performed by very-high-frequency plasma-enhanced chemical vapor deposition. These solar cells, whose intrinsic μ c-Si:H layers were prepared by using a different total gas flow rate (F_total), behave much differently in performance, although their intrinsic layers have similar crystalline volume fraction, opto-electronic properties and a deposition rate of ～ 1.0~nm/s. The influence of F_total on the micro-structural properties was analyzed by Raman and Fourier transformed infrared measurements. The results showed that the vertical uniformity and the compact degree of μ c-Si:H thin films were improved with increasing F_total. The variation of the microstructure was regarded as the main reason for the difference of the J--V parameters. Combined with optical emission spectroscopy, we found that the gas temperature plays an important role in determining the microstructure of thin films. With F_total of 300~sccm, a conversion efficiency of 8.11% has been obtained for the intrinsic layer deposited at 8.5~\AA/s (1~\AA=0.1\,nm).     

溶胶凝胶法制备参氟二氧化锡薄膜

利用溶胶凝胶方法，在硅碱玻璃底板上制备的透明低电阻SnO2:F薄膜，是一种低辐射导电薄膜。将SnCl4·5H2O 和 NH4F 溶解在50%乙醇和50%水的溶液中。制备条件为底板温度450℃，喷嘴与底板之间的距离60mm,载气流速8 L/min，制备时间5分钟。制成的SnO2:F薄膜面电阻为2Ω/□，可重复性好。并且文中还定性给出了SnO2:F薄膜其红外反射率与面电阻之间的关系。     

Ground state for CH2 and symmetry for methane decomposition

Using the different level of methods B3P86, BLYP, B3PW91, HF, QCISD、 CASSCF （4,4） and MP2 with the various basis functions 6-311G^＊＊, D95, cc-pVTZ and DGDZVP, the calculations of this paper confirm that the ground state is X^-3B1 with C2v group for CH2. Furthermore, the three kinds of theoretical methods, i.e. B3P86、 CCSD（T, MP4） and G2 with the same basis set cc-pVTZ only are used to recalculate the zero-point energy revision which are modified by scaling factor 0.989 for the high level based on the virial theorem, and also with the correction for basis set superposition error. These results are also contrary to X^-3∑^-g for the ground state of CH2 in reference. Based on the atomic and molecular reaction statics, this paper proves that the decomposition type （1） i.e. CH4 →CH2＋H2, is forbidden and the decomposition type （2） i.e. CH4→CHa＋H is allowed for CH4. This is similar to the decomposition of SiH4.     

Searching for isotropic stochastic gravitational-wave background in the international pulsar timing array second data release

We search for isotropic stochastic gravitational-wave background (SGWB) in the International Pulsar Timing Array second data release. By modeling the SGWB as a power-law, we find very strong Bayesian evidence for a common-spectrum process, and further this process has scalar transverse (ST) correlations allowed in general metric theory of gravity as the Bayes factor in favor of the ST-correlated process versus the spatially uncorrelated common-spectrum process is 30 ± 2. The median and the 90% equal-tail amplitudes of ST mode are ${{ \mathcal A }}_{\mathrm{ST}}={1.29}_{-0.44}^{+0.51}\times {10}^{-15}$, or equivalently the energy density parameter per logarithm frequency is ${{\rm{\Omega }}}_{\mathrm{GW}}^{\mathrm{ST}}={2.31}_{-1.30}^{+2.19}\times {10}^{-9}$, at frequency of 1 year⁻¹. However, we do not find any statistically significant evidence for the tensor transverse (TT) mode and then place the 95% upper limits as ${{ \mathcal A }}_{\mathrm{TT}}\lt 3.95\times {10}^{-15}$, or equivalently ${{\rm{\Omega }}}_{\mathrm{GW}}^{\mathrm{TT}}\lt 2.16\times {10}^{-9}$, at frequency of 1 year⁻¹.     

The high deposition of microcrystalline silicon thin film by very high frequency plasma enhanced chemical vapour deposition and the fabrication of solar cells

This paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with Hchemical vapour deposition, plasma deposition, solar cells, crystallinityProgram supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan Province in China (Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with Hchemical vapour deposition, plasma deposition, solar cells, crystallinityProgram supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan Province in China (Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with Hchemical vapour deposition, plasma deposition, solar cells, crystallinityProgram supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan Province in China (Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with Hchemical vapour deposition, plasma deposition, solar cells, crystallinityProgram supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan Province in China (Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with H$_{2}$ prior to plasma ignition, and selecting proper discharging time after silane flow injection. Material prepared under these conditions at a deposition rate of 0.78\,nm/s maintains higher crystallinity and fine electronic properties. By H-plasma treatment before i-layer deposition, single junction $\mu $c-Si:H solar cells with 5.5{\%} efficiency are fabricated.     

Critical radius and dipole polarizability for a confined system

The analytical transfer matrix method (ATMM) is applied to calculating the critical radius $r_{\rm c}$ and the dipole polarizability $\alpha_{\rm d}$ in two confined systems: the hydrogen atom and the Hulth\'{e}n potential. We find that there exists a linear relation between $r_{\rm c}^{1/2}$ and the quantum number $n_{r}$ for a fixed angular quantum number $l$, moreover, the three bounds of $\alpha_{\rm d}$ ($\alpha_{\rm d}^{K}$, $\alpha_{\rm d}^{B}$, $\alpha_{\rm d}^{U}$) satisfy an inequality: $\alpha_{\rm d}^{K}\leq\alpha_{\rm d}^{B}\leq\alpha_{\rm d}^{U}$. A comparison between the ATMM, the exact numerical analysis, and the variational wavefunctions shows that our method works very well in the systems.     

用H-W-ECR CVD系统实现氢化非晶硅薄膜在氢气环境下同时进行化学热退火和光诱导退火的研究

为了研究氢化非晶硅薄膜的稳定性，我们设计了一个在原子氢气氛中热退火的同时进行光诱导退火的实验(TLAH)。实验装置是由传统的微波电子回旋共振化学气相沉积系统改造而成为热丝辅助微波电子回旋共振化学气相沉积系统。为了对这一退火方法进行比较，对样品还进行了热退火、热退火同时进行光诱导退火。同时，为了定量地分析光电导衰退，我们假设光电导衰退遵循扩展指数规律：1/σph=1/σs-(1/σs-1/σ0)exp[-(t/τ)β]，这里扩展指数参数β 和时间常数 τ 可从与 lnt 的线性关系中截距和斜率得到, 式中光电导饱和值σs可以通过在对数坐标系中表示的光电导和光照时间关系进行高斯拟合得到。实验结果显示：TLAH 方法可以提高氢化非晶硅薄膜的稳定性、改善其微结构和光电特性，同时还发现，光学带隙明显减小、荧光光谱显著地朝着低能方向移动。     

Electron tunnelling phase time and dwell time through an associated delta potential barrier

The electron tunnelling phase time τP and dwell time τD through an associated delta potential barrier U(x) = ξδ(x) are calculated and both are in the order of 10^-17～10^-16s. The results show that the dependence of the phase time on the delta barrier parameter ξ can be described by the characteristic length lc = h^2/meξ and the characteristic energy Ec=meξ^2/h^2 of the delta barrier, where me is the electron mass, lc and Ec are assumed to be the effective width and height of the delta barrier with lcEc=ξ, respectively. It is found that TD reaches its maximum and τD = τp as the energy of the tunnelling electron is equal to Ec/2, i.e. as lc =λDB, λDB is de Broglie wave length of the electron.     

Improved analysis of the rare decay processes of Λ_b

It is noted that in the new Particle Data Group(PDG) version the rare decays of the Λ_b baryon have been revised with more accuracy. The new results show that most of the existing theoretical results on the process Λ_b→Λ_γ Lgbare larger than those of experiments. With the improved higher-order light-cone distribution amplitudes of the Λ baryon, we reanalyze the process in the framework of light-cone quantum chromodynamics sum rules and the branching ratio is estimated to be Br (Λ_b→Λ_γ)=(7.38_(-0.39)~(+0.40))×10~(16), which is consistent with the new experimental result. Furthermore, another process Λ_b→Λl~+l~- is also analyzed in the same frame. The final branching ratio is calculated to be Br (Λ_b→Λl~+l~-)=1.20×10~(-6), which is in good accordance with the data from the PDG and other theoretical predictions.     

The entropic squeezing of superposition of two arbitrary coherent states

In this paper the superpositions of two arbitrary coherent states ｜ψ〉 = α ｜β｜ ＋ be^iψ ｜mβe^iδ〉 are constructed by using the superposition principle of quantum mechanics. The entropic squeezing effects of the quantum states are studied. The numerical results indicate that the amplitudes, the ratio between the amplitudes of two coherent states, the phase difference between the two components and the relative phase of the two coefficients play important roles in the squeezing effects of the position entropy and momentum entropy.     

Enhanced interface properties of diamond MOSFETs with Al_2O_3 gate dielectric deposited via ALD at a high temperature

The interface state of hydrogen-terminated(C–H) diamond metal–oxide–semiconductor field-effect transistor(MOSFET) is critical for device performance. In this paper, we investigate the fixed charges and interface trap states in C–H diamond MOSFETs by using different gate dielectric processes. The devices use Al_2O_3 as gate dielectrics that are deposited via atomic layer deposition(ALD) at 80℃ and 300℃, respectively, and their C–V and I–V characteristics are comparatively investigated. Mott–Schottky plots(1/C~2–VG) suggest that positive and negative fixed charges with low density of about 1011 cm~(-2) are located in the 80-℃-and 300-℃ deposition Al_2O_3 films, respectively. The analyses of direct current(DC)/pulsed I–V and frequency-dependent conductance show that the shallow interface traps(0.46 e V–0.52 e V and0.53 e V–0.56 e V above the valence band of diamond for the 80-℃ and 300-℃ deposition conditions, respectively) with distinct density(7.8 × 10~(13) e V~(-1)·cm~(-2)–8.5 × 10~(13) e V-1·cm~(-2) and 2.2 × 1013 e V~(-1)·cm~(-2)–5.1 × 10~(13) e V~(-1)·cm~(-2) for the80-℃-and 300-℃-deposition conditions, respectively) are present at the Al_2O_3/C–H diamond interface. Dynamic pulsed I–V and capacitance dispersion results indicate that the ALD Al_2O_3 technique with 300-℃ deposition temperature has higher stability for C–H diamond MOSFETs.     

SF_6分子最高占据轨道对称性的判断

量化计算是理论研究分子的重要手段,对于具有高对称群的分子,采用子群计算是常用的方法.分子的电子态或分子轨道等的对称性在子群的表示中会出现重迭,从而不能从子群的结果直接给出电子态或分子轨道对称性的归属.本文以如何判断SF6基态1 A_(1g)的电子组态中最高占据轨道的对称性为例来解决这个问题.针对某些文献中的SF6基态1 A1g的电子组态中,最高占据轨道对称性是T_(1g)却写成T_(2g)的问题,采用Molpro量化计算软件,对SF6基态的平衡结构,进行了HF/6-311G*计算,得到了能量三重简并的最高占据轨道的函数表达式,进而运用O_h群的对称操作作用在三个轨道函数上,得到各操作的矩阵表示,于是得到特征标,最后确定了最高占据轨道为T_(1g)对称性.     

Muonic Anti-hydrogen {(\bar{\rm H}_{\mu}}) Formation in Low-energy Three-body Reactions

A few-body type computation is performed for a three-charge-particle collision with participation of a slow antiproton ${\bar{\rm{p}}}$ and a muonic muonium atom (true muonium), i.e. a bound state of two muons ${(\mu^{+}\mu^{-})}$ in its ground state. The total cross section of the following reaction ${\bar{\rm p}+(\mu^{+}\mu^{-}) \rightarrow \bar{\rm{H}}_{\mu} + \mu^{-}}$ , where muonic anti-hydrogen ${\bar{\rm{H}}_{\mu}=(\bar{\rm p}\mu^{+})}$ is a bound state of an antiproton and positive muon, is computed in the framework of a set of coupled two-component Faddeev-Hahn-type equation. A better known negative muon transfer low energy three-body reaction: ${{\rm t}^{+} + ({\rm d}^{+}\mu^{-})\rightarrow ({\rm t}^{+}\mu^{-}) + {\rm d}^{+}}$ is also computed as a test system. Here, t⁺ is triton and d⁺ is deuterium.     

Constraints on $H_0$ from WMAP and BAO Measurements *

We report the constraints of $H_0$ obtained from Wilkinson Microwave Anisotropy Probe (WMAP) 9-year data combined with the latest baryonic acoustic oscillations (BAO) measurements. We use the BAO measurements from 6dF Galaxy Survey (6dFGS), the SDSS DR7 main galaxies sample (MGS), the BOSS DR12 galaxies, and the eBOSS DR14 quasars. Adding the recent BAO measurements to the cosmic microwave background (CMB) data from WMAP, we constrain cosmological parameters $\Omega_m=0.298\pm0.005$, $H_0=68.36^{+0.53}_{-0.52} {\rm km}\cdot {\rm s}^{-1}\cdot {\rm Mpc}^{-1}$, $\sigma_8=0.8170^{+0.0159}_{-0.0175}$ in a spatially flat $\Lambda$ cold dark matter ($\Lambda$CDM) model, and $\Omega_m=0.302\pm0.008$, $H_0=67.63\pm1.30 {\rm km}\cdot{\rm s}^{-1}\cdot {\rm Mpc}^{-1}$, $\sigma_8=0.7988^{+0.0345}_{-0.0338}$ in a spatially flat $w$CDM model, respectively. Our measured $H_0$ results prefer a value lower than 70 ${\rm km}\cdot {\rm s}^{-1}\cdot{\rm Mpc}^{-1}$, consistent with the recent data on CMB constraints from Planck (2018), but in $3.1$ and $3.5\sigma$ tension with local measurements of SH0ES (2018) in $\Lambda$CDM and $w$CDM framework, respectively. Our results indicate that there is a systematic tension on the Hubble constant between SH0ES and the combination of CMB and BAO datasets.     

Study of the FCNH Coupling with Boosted Higgs at LHC*

We present a study about the flavor changing coupling of the top quark with the Higgs boson through the channel $pp\to H t/\bar{t}$ with $H\to b\bar{b}$ at LHC. The final states considered for the such process are $l^\pm+\mathbb{E}_{T}+3b$. We focus on the boosted region in the phase space of the Higgs boson. The backgrounds and events are simulated and analyzed. The sensitivities for the FCNH couplings are estimated. It is found that it is more sensitive for $y_{\rm tu}$ than $y_{\rm tq}$ at LHC. The upper limits of the FCNH couplings can be set at LHC with 3000 ${\rm fb}^{-1}$ integrated luminosity as $\vert y_{\rm tu}\vert^2=1.1\times10^{-3}$ and $\vert y_{\rm tc}\vert^2=7.2\times 10^{-3}$ at 95% C.L.     

The splitting of low-lying states for hydroxyl molecule under spin--orbit coupling

The splitting of potential energy curves for the states $X^{2}\Pi _{3/2}$, $^{2}\Pi _{1/2}$ and $A^{2}\Sigma ^{ +}$ of hydroxyl OH under spin--orbit coupling (SOC) has been calculated by using the SO multi-configuration quasi-degenerate perturbation theory (SO-MCQDPT). Their Murrell--Sorbie (M--S) potential functions have been derived, then, the spectroscopic constants for $X^{2}\Pi _{3/2}$,$^{ 2}\Pi _{1/2}$ and $A^{2}\Sigma ^{ + }$ have been derived from the M--S function. The calculated dissociation energies for the three states are $D_{0}$[OH($X^{2}\Pi _{3/2})$]=34966.632cm$^{-1}$, $D_{0}$[OH($^{2}\Pi _{1/2})$]=34922.802cm$^{-1}$, and $D_{0}$[OH($A^{2}\Sigma ^{ + })$]=17469.794cm$^{-1}$, respectively. The vertical excitation energy $\nu [ {{ }^2\Pi _{1/2} ( {\nu = 0} ) \to {X}{ }^2\Pi _{3/2} ( {\nu = 0} )} ] = 139.6{\rm cm}^{-{\rm 1}}$. All the spectroscopic data for the $X^{2}\Pi _{3/2}$ and $^{2}\Pi _{1/2 }$ are given for the first time except the dissociation energy of $X^{2}\Pi _{3/2}$.