共查询到19条相似文献,搜索用时 515 毫秒
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本文以时间分辨的反射率测量结合背散射和沟道分析、透射电子显微镜分析,比较和研究了在77K温度下180keV,1×1014/cm2P2+和90KeV,2×1014/cm2P+注入硅于550℃退火时的固相外延过程。发现了P2+,P+注入硅样品的固相外延过程具有不同的特征。这种差异是由于P2+和P+在硅中引入不同的损伤造成的。P+注入的硅样品测量得到的时间分辨的反射谱是反常的。这种反常谱可用样品退火时从表面层到非晶硅层与从衬底到非晶硅层的双向外延的过程给出满意的解释。
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本文针对辐射前后部分耗尽结构绝缘体上硅(SOI)器件的电学特性与低频噪声特性开展试验研究. 受辐射诱生埋氧化层固定电荷与界面态的影响, 当辐射总剂量达到1 M rad(Si) (1 rad = 10-2 Gy)条件下, SOI器件背栅阈值电压从44.72 V 减小至12.88 V、表面电子有效迁移率从473.7 cm2/V·s降低至419.8 cm2/V· s、亚阈斜率从2.47 V/dec增加至3.93 V/dec; 基于辐射前后亚阈斜率及阈值电压的变化, 可提取得到辐射诱生界面态与氧化层固定电荷密度分别为5.33×1011 cm- 2与2.36×1012 cm-2. 受辐射在埋氧化层-硅界面处诱生边界陷阱、氧化层固定电荷与界面态的影响, 辐射后埋氧化层-硅界面处电子被陷阱俘获/释放的行为加剧, 造成SOI 器件背栅平带电压噪声功率谱密度由7×10- 10 V2·Hz-1增加至1.8×10-9 V2 ·Hz-1; 基于载流子数随机涨落模型可提取得到辐射前后SOI器件埋氧化层界面附近缺陷态密度之和约为1.42×1017 cm-3·eV-1和3.66×1017 cm-3·eV-1. 考虑隧穿削弱因子、隧穿距离与时间常数之间关系, 本文计算得到辐射前后埋氧化层内陷阱电荷密度随空间分布的变化. 相似文献
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以50keV和100keV能量的氢离子注入p型(100)直拉硅单晶薄膜。注入剂量为1015—2×1017H+/cm2。试样在HU-1300型超高压透射电子显微镜中进行电子辐照和原位加热动态观察。结果表明在20—300℃温度范围内与未注氢硅相比,注氢硅在相同的电子辐照条件下产生的电子辐照缺陷较少,电子辐照缺陷形成所需的潜伏时间较长。在电子显微镜中加热试样时于190℃开始观察到氢泡,190—220℃范围内氢泡逐渐产生并长大
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本文研究了不同能量(5—600keV)和不同剂量(1014-1016atom/cm2)下的P2+和P+注入〈100〉单晶硅后的损伤及退火行为。实验结果表明,P2+注入所产生的损伤总是大于P+注入所产生的损伤。由移位效率之比ND*(mol)/2ND*(atom)所表征的分子效应随入射能量的改变而变化并在100keV(P2+),50keV(P+)处达到极大值。P2+与P+注入的样品,退火后的载流子分布也有某些区别。我们认为,产生这些分子效应的基本原因是位移尖峰效应,但当入射离子的能量较高时,还应该考虑离子、靶原子之间的多体碰撞效应的贡献。
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利用射频磁控反应溅射技术,制备了氮掺杂的SiO2纳米薄膜.发现N掺杂SiO2体系纳米薄膜具有铁磁性.较小的氮化硅颗粒均匀分布在氧化硅基质中有利于磁有序的形成.基底温度为400℃时,样品薄膜具有最大的饱和磁化强度和矫顽力,分别为35 emu/cm3和75 Oe.薄膜的磁性可能产生于氮化硅和氧化硅的界面.理论计算表明,N掺杂SiO2体系具有净自旋.同时,由氮化硅和氧化硅界面之间的电荷转移导致的轨道磁矩也会对样品的磁性有贡献
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2薄膜')" href="#">N掺杂SiO2薄膜
射频磁控反应溅射
界面磁性
基底温度 相似文献
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利用脉宽为25 ns的脉冲Nd: YAG 532 nm的激光,在1010—1011 W/cm2的强度下,用飞行时间质谱对丙酮团簇的激光电离过程进行了研究. 观察到了较强的Oq+(q=2—4)和Cq+(q=1—4)高价离子信号,这些高价离子 C4+,C3+,C2+,O4+,O3+,O2+的最大概然平动能分别为240 eV,70 eV,30 eV,90 eV,80 eV,40 eV. 高价离子的强度和平动能随激光强度的增大而增大. 我们提出一个多光子电离引发,逆韧致吸收加热-电子碰撞电离模型来解释高价离子的产生.
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丙酮
团簇
库仑爆炸
高价离子 相似文献
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采用快速热退火(rapid thermal annealing, RTA)法和脉冲激光辐照退火(laser spark annealing, LSA)法, 在n型4H-SiC的Si面制备出Ni电极欧姆接触. 经传输线法测得RTA样品与LSA样品的比接触电阻分别为5.2×10-4 Ω·cm2, 1.8× 10-4 Ω·cm2. 使用扫描电子显微镜、原子力显微镜、透射电子显微镜、拉曼光谱等表征手段, 比较了两种退火方式对电极表面形貌、电极/衬底截面形貌和元素成分分布、SiC衬底近表层碳团簇微结构的影响. 结果表明, 相比于RTA, LSA法制备出的欧姆接触在电极表面形貌、界面形貌、电极层组分均匀性等方面都具有明显优势, 有望使LSA成为一种非常有潜力的制备欧姆接触的退火处理方法. 相似文献
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R. Job A.G. Ulyashin W.R. Fahrner A.I. Ivanov L. Palmetshofer 《Applied Physics A: Materials Science & Processing》2001,72(3):325-332
Oxygen and hydrogen accumulations at buried implantation-damage layers were studied after post-implant-ation annealing of
hydrogen- and helium-implanted Czochralski (Cz) silicon. Hydrogen implantation was carried out at energies E=180 keV and doses
D=2.7×1016 cm-2, and helium implantation at E=300 keV and D=1016 cm-2. For comparison hydrogen implantation was also done into float-zone (Fz) silicon wafers. Post-implantation annealing at 1000 °C
was done either in H2 or N2 atmosphere. Hydrogen and oxygen concentration profiles were measured by secondary ion mass spectroscopy (SIMS). It is shown
that the ambient during annealing plays a significant role for the gettering of oxygen at buried implantation-damage layers
in Cz Si. For both hydrogen and helium implantations, the buried defect layers act as rather effective getter centers for
oxygen and hydrogen at appropriate conditions. The more efficient gettering of oxygen during post-implantation annealing in
a hydrogen ambient can be attributed to a hydrogen-enhanced diffusion of oxygen towards the buried implantation-damage layers,
where a fast oxygen accumulation occurs. Oxygen concentrations well above 1019 cm-3 can be obtained. From the comparison of measurements on hydrogen-implanted Cz Si and Fz Si one can conclude that at the buried
defect layers hydrogen is most probably trapped by voids and/or may be stable as immobile molecular hydrogen species. Therefore
hydrogen accumulated at the defect layers, and is preserved even after high-temperature annealing at 1000 °C.
Received: 3 July 2000 / Accepted: 11 July 2000 / Published online: 22 November 2000 相似文献
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M. Tamura K. Tokiguchi H. Seki M. Ishimaru H. Mori 《Applied Physics A: Materials Science & Processing》2005,81(7):1375-1383
In order to form silicon (Si)-on-insulator (SOI) layers with various thicknesses, oxygen implantation with doses between 1.0×1017/cm2 and 6.0×1017/cm2 and at energies between 40 and 240 keV has been carried out into 300 mm diameter (100)Si wafers at a temperature of 560 °C. After implantation, Si wafers are annealed in dry Ar mixed with 1% O2 at a temperature of 1350 °C for 4 h. The quality of buried oxide (BOX) layers and the microstructure in implanted layers before and after annealing is characterized by transmission electron microscopy. The results reveal that the appreciable number of threading dislocations (TDs) is generated in SOI layers implanted at energies above 200 keV under the optimum dose-energy conditions for the continuous BOX layer formation. Whereas, in the case of discontinuous BOX layers, the TD generation is observed in samples implanted at energies above 120 keV. The generation of TDs is discussed with the emphasis on the effect of implantation energy. PACS 61.72Ff; 61.72Lk 相似文献
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P. I. Gaiduk F. F. Komarov V. A. Pilipenko V. S. Solovygraveyev N. I. Sterzhanov 《辐射效应与固体损伤》2013,168(6):205-211
Structure and impurity behaviour of silicon doped by B+ ion implantation up to dose of 2 × 1015 ion/cm2 have been investigated after lamp pulse annealing. It has been demonstrated that the implanted layer structure strongly depends on the implantation dose, light energy density, as well as the crystallographic orientation. The optimal annealing result in the structure, which is equivalent to that obtained in the thermal treatment, The impurity diffusive redistribution proved to be rather weaker then in the case of thermal treatment. 相似文献
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V. Popok V. Odzhaev V. Hnatowicz J. Kvítek V. Švorčik V. Rybka 《Czechoslovak Journal of Physics》1994,44(10):949-956
Silicon wafers were implanted with 40 keV B+ ions (to doses of 1.2×1014 or 1.2×1015 cm–2) and 50 or 100 keV N+ ions (to doses from 1.2×1014 to 1.2×1015 cm–2). After implantations, the samples were furnace annealed at temperatures from 100 to 450 °C. The depth profiles of the radiation damages before and after annealing were obtained from random and channeled RBS spectra using standard procedures. Two damaged regions with different annealing behaviour were found for the silicon implanted with boron ions. Present investigations show that surface disordered layer conserves at the annealing temperatures up to 450 °C. The influence of preliminary boron implantation on the concentration of radiation defects created in subsequent nitrogen implantation was studied. It was shown that the annealing behaviour of the dual implanted silicon layers depends on the nitrogen implantation dose.The authors would like to thank the members of the INP accelerator staff for the help during the experiments. The work of two authors (V.H. and J.K.) was partially supported by the Internal Grant Agency of Academy of Science of Czech Republic under grant No. 14805. 相似文献
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R. M. Bayazitov I. B. Khaibullin R. I. Batalov R. M. Nurutdinov 《Technical Physics》2003,48(6):742-744
The structure and infrared absorption of cubic silicon carbide (β-SiC) layers produced by the continuous high-dose implantation of carbon ions (C+) into silicon (E=40 keV and D=5×1017 cm−2), followed by the processing of the implanted layers with a high-power nanosecond pulsed ion beam (C+, τ=50 ns, E=300 keV, and W=1.0–1.5 J/cm2), are investigated. Transmission electron microscopy and electron diffraction data indicate the formation of a coarse-grained polycrystalline β-SiC layer with grain sizes of up to 100 nm. A characteristic feature of such a layer is the dendritic surface morphology, which is explained by crystallization from the melt supercooled well below the melting point of β-SiC. 相似文献
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Investigation of the inhibiting outdiffusion of erbium atoms to a silicon-on-insulator surface after annealing at high temperature 下载免费PDF全文
The annealing behaviour of 400 keV Er ions at a fluence of 2×1015 cm-2 implanted into silicon-on-insulator(SOI) samples is investigated by Rutherford backscattering spectrometry of 2.1 MeV He2+ ions with a multiple scattering model.It is found that the damage close to the SOI surface is almost removed after being annealed in O2 and N2 atmospheres,successively,at ℃,and that only a small number of the Er atoms segregated to the surface of the SOI sample,whereas a large number of Er atoms diffused to a deeper position because of the affinity of Er for oxygen.For the SOI sample co-implanted with Er and O ions,there is no evident outdiffusion of Er atoms to the SOI surface after being annealed in N2 atmosphere at ℃. 相似文献
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N. G. Galkin D. L. Goroshko K. N. Galkin S. V. Vavanova I. A. Petrushkin A. M. Maslov R. I. Batalov R. M. Bayazitov V. A. Shustov 《Technical Physics》2010,55(7):1036-1044
The effect of pulsed ion-beam annealing on the surface morphology, structure, and composition of single-crystal Si(111) wafers
implanted by chromium ions with a dose varying from 6 × 1015 to 6 × 1016 cm−2 and on subsequent growth of silicon is investigated for the first time. It is found that pulsed ion-beam annealing causes
chromium atom redistribution in the surface layer of the silicon and precipitation of the polycrystalline chromium disilicide
(CrSi2) phase. It is shown that the ultrahigh-vacuum cleaning of the silicon wafers at 850°C upon implantation and pulsed ion-beam
annealing provides an atomically clean surface with a developed relief. The growth of silicon by molecular beam epitaxy generates
oriented 3D silicon islands, which coalesce at a layer thickness of 100 nm and an implantation dose of 1016 cm−2. At higher implantation doses, the silicon layer grows polycrystalline. As follows from Raman scattering data and optical
reflectance spectroscopy data, semiconducting CrSi2 precipitates arise inside the silicon substrate, which diffuse toward its surface during growth. 相似文献
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Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n+-layer 下载免费PDF全文
A novel silicon-on-insulator (SOI) high-voltage device based on epitaxy-separation by implantation oxygen (SIMOX) with a partial buried n+-layer silicon-on-insulator (PBN SOI) is proposed in this paper. Based on the proposed expressions of the vertical interface electric field, the high concentration interface charges which are accumulated on the interface between top silicon layer and buried oxide layer (BOX) effectively enhance the electric field of the BOX (EI), resulting in a high breakdown voltage (BV) for the device. For the same thicknesses of top silicon layer (10 μm) and BOX (0.375 upmum), the EI and BV of PBN SOI are improved by 186.5% and 45.4% in comparison with those of the conventional SOI, respectively. 相似文献