不同退火方式对Ni/SiC接触界面性质的影响

采用快速热退火(rapid thermal annealing, RTA)法和脉冲激光辐照退火(laser spark annealing, LSA)法, 在n型4H-SiC的Si面制备出Ni电极欧姆接触. 经传输线法测得RTA样品与LSA样品的比接触电阻分别为5.2×10^-4 Ω·cm², 1.8× 10^-4 Ω·cm². 使用扫描电子显微镜、原子力显微镜、透射电子显微镜、拉曼光谱等表征手段, 比较了两种退火方式对电极表面形貌、电极/衬底截面形貌和元素成分分布、SiC衬底近表层碳团簇微结构的影响. 结果表明, 相比于RTA, LSA法制备出的欧姆接触在电极表面形貌、界面形貌、电极层组分均匀性等方面都具有明显优势, 有望使LSA成为一种非常有潜力的制备欧姆接触的退火处理方法.     

锌铬尖晶石水热合成及形成机理研究

采用水热法制备了纳米ZnCr2 O4晶粒.采用X-射线衍射(XRD)、透射电子显微镜(TEM)和红外光谱仪(IR)研究了晶粒的物相演化规律.结果表明,在180℃温度下可制备2 nm的ZnCr2O4晶粒.ZnCr2 O4晶粒的形成遵循溶解-结晶机制,铬的三聚体和含有羟基的四配位锌的聚集体形成与Al13结构相同的ZnCr12,这些ZnCr12晶核经过进一步缩聚反应形成ZnCr2O4晶粒.     

Effect of additional silicon on titanium/4H-SiC contacts properties

The Ti electrode was deposited on the(0001) face of an n-type 4H-SiC substrate by magnetron sputtering. The effect of the electrode placement method during the annealing treatment on the contact property was carefully investigated. When the electrode was faced to the Si tray and annealed, it showed ohmic behavior, otherwise it showed a non-ohmic property.X-ray diffraction(XRD), X-ray photoelectron spectroscopy(XPS), scanning electron microscopy(SEM), and atomic force microscopy(AFM) were used to characterize the electrode phase, composition, thickness, and surface morphology. The additional silicon introduced from the Si tray played a key role in the formation of the ohmic contact on the Ti/4H-SiC contact.