Z-扫描参量对薄膜材料三阶非线性光学特性的影响

采用数值计算方法对薄膜材料的Z-扫描参量进行研究.对不同激光脉宽下Z-扫描的三阶非线性折射系数和吸收系数进行分析,结果显示不同等级的脉宽激光器对计算结果的数量级影响很大.对不同小孔光阑半径的Z-扫描闭孔曲线进行仿真,结果显示光阑小孔越小,获得特征曲线的峰谷值越明显.对不同光阑离透镜焦点的距离值进行Z-扫描闭孔曲线仿真,结果显示距离为1/2透镜焦距值时闭孔Z-扫描曲线能得到相对较大的峰谷差值.数值分析结果与相关文献报道的实验结果基本一致.     

Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n~+-layer

A novel silicon-on-insulator (SOI) high-voltage device based on epitaxy-separation by implantation oxygen (SIMOX) with a partial buried n +-layer silicon-on-insulator (PBN SOI) is proposed in this paper.Based on the proposed expressions of the vertical interface electric field,the high concentration interface charges which are accumulated on the interface between top silicon layer and buried oxide layer (BOX) effectively enhance the electric field of the BOX (E_I),resulting in a high breakdown voltage (BV) for the device.For the same thicknesses of top silicon layer (10 μm) and BOX (0.375 μm),the E I and BV of PBN SOI are improved by 186.5% and 45.4% in comparison with those of the conventional SOI,respectively.     

Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n+-layer

A novel silicon-on-insulator (SOI) high-voltage device based on epitaxy-separation by implantation oxygen (SIMOX) with a partial buried n⁺-layer silicon-on-insulator (PBN SOI) is proposed in this paper. Based on the proposed expressions of the vertical interface electric field, the high concentration interface charges which are accumulated on the interface between top silicon layer and buried oxide layer (BOX) effectively enhance the electric field of the BOX (E_I), resulting in a high breakdown voltage (BV) for the device. For the same thicknesses of top silicon layer (10 μm) and BOX (0.375 upmum), the E_I and BV of PBN SOI are improved by 186.5% and 45.4% in comparison with those of the conventional SOI, respectively.     

昆明市区400名学前儿童发铅锌测定及其相关分析

为了解学前儿童头发中铅锌含量及两元素间的关系,采用火焰原子吸收分光光度法对昆明市三所幼儿园４００名学前儿童进行了发中铅锌含量测定。结果表明,发铅≥１０＊１０＾－６者２３２入,占５８％;发锌≤１００＊１０＾－６者２４０人,占６０％铅锌两元素呈负相关。     

Z-扫描参量对薄膜材料三阶非线性光学特性的影响

采用数值计算方法对薄膜材料的Z-扫描参量进行研究.对不同激光脉宽下Z-扫描的三阶非线性折射系数和吸收系数进行分析,结果显示不同等级的脉宽激光器对计算结果的数量级影响很大.对不同小孔光阑半径的Z-扫描闭孔曲线进行仿真,结果显示光阑小孔越小,获得特征曲线的峰谷值越明显.对不同光阑离透镜焦点的距离值进行Z-扫描闭孔曲线仿真,...     

Te/TeO2-SiO2复合薄膜的吸收和非线性光学特性研究

应用分光光度计测量Te/TeO₂-SiO₂复合薄膜的透射光谱和吸收光谱, 在480nm附近观察到Te颗粒引起的等离子体共振吸收峰; 采用Z扫描技术研究了共振(激发波长为532 nm)和非共振情况下(激发波长1064 nm) 不同电位制备薄膜的Te颗粒状态与复合薄膜的三阶非线性极化率的关系. 基于有效介质理论对复合薄膜的三阶非线性效应进行分析, 研究Te颗粒大小对Te/TeO₂-SiO₂复合薄膜的非线性光学性质的影响及其产生机理. 结果表明薄膜制备过电位增大, Te的粒径减小, 颗粒数量多, 颗粒分布趋于均匀, 使得金属颗粒的表面等离子体共振峰红移, 吸收强度增强, 导致三阶非线性光学效应增强, χ⁽³⁾由1064 nm的5.12×10^-7 esu增大为532 nm的8.11×10^-7 esu. 关键词： 碲 二氧化碲 复合薄膜 三阶非线性