化学气相沉积金刚石薄膜探测器对α粒子的电荷收集效率

 实验测量了自行研制的三明治电极结构化学气相沉积(CVD)金刚石薄膜探测器在室温下对241Am, 243Am 与244Cm α粒子的能谱响应,得到了其α粒子响应电荷收集效率随偏压的变化关系;获得了不同偏压下其相对平均电荷收集效率及响应谱下降沿10%处的相对电荷收集效率。结果表明：所研制的CVD金刚石薄膜探测器性能稳定,对α粒子响应的电荷收集效率随偏压的增加而趋于饱和,对α粒子平均电荷收集效率达33.5%,谱下降沿10%处的电荷收集效率达57%。     

基于4H-SiC肖特基势垒二极管的γ射线探测器

针对极端环境下耐高温和耐辐照半导体核探测器的研制需求,采用外延层厚度为100μm的4H碳化硅(4H-SiC)制备成肖特基二极管探测器,研究了该探测器对~(241)Am源γ射线的能谱响应.采用磁控溅射金属Ni制备了肖特基二极管的欧姆接触和肖特基接触,利用室温电流-电压和电容-电压测试研究了二极管的电学特性.欧姆特性测试表明,1050°C退火时,欧姆接触特性最好.从正向电流-电压曲线得出二极管肖特基势垒高度为1.617 eV,理想因子为1.127,表明探测器具备良好的热电子发射特性.从电容-电压曲线获得二极管外延层净掺杂浓度为2.903×10~(14)cm~(-3),并研究了自由载流子浓度在外延层中的纵向分布.在反向偏压为500 V时,二极管的漏电流只有2.11 nA,具有较高的击穿电压.测得在-300 V条件下,SiC二极管探测器对能量为59.5 keV的γ射线的能量分辨率为9.49%(5.65 keV).     

D-T中子与平板型聚乙烯材料作用的次级中子角度谱实验研究

基于反冲质子法建立了一种测量D-T中子与平板型宏观样品作用的次级中子角度谱的实验方法.为保证探测器的能量线性并在较低的中子有效测量下阈(0.5 MeV)情况下获得好的中子-伽马射线甄别性能,采用高、低能段分别测量的方法.采用事件记录法,同时记录了次级中子和伴随伽马射线的脉冲形状甄别和脉冲幅度二维信息,利用基于ROOT数据分析平台编写的离线数据分析程序,完成了伴随伽马射线的挑选和扣除,以及高、低两能段反冲质子谱的拼接,并成功的将神经网络技术应用于中子能谱的解谱,获得了D-T中子与9和18 cm厚平板型聚乙烯材料作用的0.5-15 MeV的次级中子角度谱实验结果.实验模型的MC模拟由MCNP5完成,数据库采用ENDF-VI,实验结果和MC计算结果在实验不确定度范围内一致. 关键词： D-T中子 积分中子学 反冲质子法 次级中子能谱     

用α能损法测量薄膜厚度所需真空度的确定方法

用能损法测量薄膜厚度及其厚度分布的均匀性是一种有效的新方法,但这种测量必须在真空室内进行,如何恰当地选择真空度对于提高测量精度和降低真空系统的建造成本都具有重要意义。通过采用SRIM软件模拟5.486 MeV 粒子在空气中的阻止本领,计算出在不同真空度时,从241Am源发出粒子穿过不同距离达到探测器时的能量损失,得到粒子能量损失与真空度的关系。根据这一关系,结合所建能谱仪在测量过程中的稳定性和重复性,建立了用粒子测量薄膜厚度所需真空度的确定方法,并用这一方法得到了在源与探测器距离为2~8 cm时,小于100 Pa的真空度能完全满足测量要求的结果。     

准单能中子单粒子效应研究现状

对国际上用于单粒子效应(SEE)研究的准单能中子源进行了相关调研,对产生准单能中子源的7Li(p, n)7Be核反应、装置布局以及表征中子场性质的中子注量率、中子能谱、中子束流轮廓及其均匀性、热中子本底等参数的理论计算及实验测量进行了系统的介绍。进行准单能中子SEE实验要求中子源有较高的中子注量率水平、较大的束流轮廓、较好的束流均匀性以及较低的热中子本底,并且能测量出精确的中子能谱。对准单能中子SEE实验过程以及三种中子SEE截面的尾部修正方法进行了介绍。     

单探头中子/伽马甄别能谱仪系统研制

针对放射性物质异常泄漏、防范核材料的非法转移和任意携带,提出一种基于单探头中子/伽马甄别能谱仪系统,实现敏感控制区中特殊核材料和放射性物质的监测。围绕核信号获取与数字化采集、辐射射线粒子甄别与能谱分析,开展基于FPGA与EJ299-33A的核数据采集电路设计、核信号处理算法设计和Matlab中子/伽马鉴别与能谱离线分析方法等关键技术研究。设计上位机软件实时处理辐射能谱数据,为正确做出应急预案提供数据参考。利用新型探测器和分型频谱数学模型在FPGA内部实现射线种类甄别,有效地解决了采用传统老式探测器和模拟电路的方法鉴别困难的问题,验证了分型频谱法在核信号处理上具有一定的可行性。开发完成集放射性种类判定、核素识别于一体的多功能集成中子/伽马探测器,在中子/伽马的混合辐射场中,既能实现射线甄别又能测量能谱,解决在复杂放射性环境中对不同射线种类的能谱分析和核素识别问题。     

PIPS-α谱仪探测效率蒙特卡罗模拟及其影响因素

在放射源能谱测量过程中,PIPS-谱仪探测效率的影响因素有几何因子、空气层吸收、死层吸收、本征探测效率等,为了更精确地计算放射源的活度,分析母体核素种类和浓度,探究各因素对探测效率的影响具有重要意义。使用蒙特卡罗软件模拟不同探源距、真空度下的放射源的能谱测量;使用SRIM模拟5 MeV 粒子在空气和死层中的射程及分布;使用PIPS-谱仪测量241Am,238Pu,239Pu三种标准源的实际能谱;根据实验与模拟的结果对各个因素对探测效率的影响进行分析,并计算得到谱仪对不同放射源的本征探测效率。结果表明:在PIPS-谱仪的能谱测量过程中,影响谱仪探测效率的主要因素是几何因子和本征探测效率,空气层和死层对粒子的吸收可以忽略不计;谱仪对241Am,238Pu,239Pu三种标准源的本征探测效率分别为64.84%,49.95%,51.55%。     

掺钆液闪中子探测器的研制

中子在探测器中能产生与暗物质粒子(WIMPs)类似的核反冲信号,对于低背景的暗物质直接探测实验,精确测量和排除中子的干扰尤其重要。为测量中国锦屏地下实验室(CJPL)中子本底的通量,研制了高效的、具有很强"中子-伽马"分辨的掺钆液闪快中子探测器。介绍了掺钆液闪中子探测器的研制和性能,包括探测器形状和尺寸的设计,液体闪烁体类型、光电倍增管型号以及液闪容器材料的选择,探测器的伽马能量刻度以及中子与伽马信号的甄别。用Am-Be中子源对探测器进行探测效率刻度,得到阈值为0.2 MeV等效电子能量的中子探测效率为(6.30±0.30)%,满足中国锦屏地下实验室对中子通量测量的要求。     

沟槽型硅微结构中子探测器的蒙特卡罗模拟研究

采用蒙特卡罗模拟方法研究了微结构参数、填充致密度等因素对沟槽型微结构半导体中子探测器(MSND)性能的影响规律,并开展了沟槽型MSND的优化设计研究。研究表明,随着沟槽间距的增加,MSND的探测效率呈下降趋势;当沟槽间距固定时,存在最优的沟槽宽度使得探测效率最大化;沟槽深度越大,探测效率越高。沟槽宽度和沟槽间距为15μm和5μm是一对优化的参数组合,可保证较高的探测效率和较平稳的系统甄别阈-探测效率曲线。当系统甄别阈取300keV时,沟槽宽度、间距和深度分别为15,5μm和200μm时的MSND热中子本征探测效率可达37.77%,与平面探测器相比提高了9.2倍;对137 Cs源662keV伽马射线的中子-伽马射线甄别比可达4.1×103,与平面探测器相比提高了23.7倍。本工作从理论上证明了MSND可解决传统平面型半导体中子探测器探测效率低的难题,同时可保持半导体探测器中子-伽马射线甄别容易的特点。     

Be(d,n)反应中子源能谱测量及应用

 利用中子飞行时间技术和BC501A液体闪烁探测器的粒子分辨特性,测量了0°方向、20 MeV氘束轰击厚金属铍靶反应产生的中子源能谱,测量的中子能谱范围为0.7～25.0 MeV。在60°方向放置芪晶体闪烁探测器,由刻度好的BC501A液体闪烁探测器归一校正后,用于中子源强度监测。利用Be(d, n) 反应中子源,采用单粒子灵敏度标定方法,实验标定了0.75~15.75 MeV能量范围内的薄膜闪烁探测器中子能量响应曲线,实验结果与蒙特卡罗模拟计算结果在8%的不确定度范围内一致。     

Sensitivity of heavy-ion-induced single event burnout in SiC MOSFET

The energy deposition and electrothermal behavior of SiC metal-oxide-semiconductor field-effect transistor(MOSFET)under heavy ion radiation are investigated based on Monte Carlo method and TCAD numerical simulation.The Monte Carlo simulation results show that the density of heavy ion-induced energy deposition is the largest in the center of the heavy ion track.The time for energy deposition in SiC is on the order of picoseconds.The TCAD is used to simulate the single event burnout(SEB)sensitivity of SiC MOSFET at four representative incident positions and four incident depths.When heavy ions strike vertically from SiC MOSFET source electrode,the SiC MOSFET has the shortest SEB time and the lowest SEB voltage with respect to direct strike from the epitaxial layer,strike from the channel,and strike from the body diode region.High current and strong electric field simultaneously appear in the local area of SiC MOSFET,resulting in excessive power dissipation,further leading to excessive high lattice temperature.The gate-source junction area and the substrate-epitaxial layer junction area are both the regions where the SiC lattice temperature first reaches the SEB critical temperature.In the SEB simulation of SiC MOSFET at different incident depths,when the incident depth does not exceed the device's epitaxial layer,the heavy-ion-induced charge deposition is not enough to make lattice temperature reach the SEB critical temperature.     

A dose meter for pulsed neutron fields

Many active radiation detectors exhibit severe limitations in pulsed radiation fields, which cannot be easily overcome without the design of new technology. Therefore a new area dose monitor for the measurement of pulsed and continuous neutron and gamma radiation fields was developed. The measurement of pulsed radiation is based on activation of short-lived nuclides in the detector materials or in the surroundings. The instrument comprises a thermal neutron detector in a moderator for neutron detection and a plastic scintillator for beta and gamma detection. These detectors are measuring direct radiation and also decay particles from the instable activated nuclei. The data are time-resolved acquired by a fast FADC module and the delayed decay products are identified by analyzing their timing characteristics. Measurements with pulsed and with continuous radiation are reported.     

中国散裂中子源反角白光中子束流参数的初步测量

中国散裂中子源(CSNS)已于2018年5月建设完工,随后进行了试运行.其中的反角白光中子束线(Back-n)可用于中子核数据测量、中子物理研究和核技术应用等多方面的实验.本文报道对该中子束的品质参数测量实验过程以及最终实验结果.实验主要采用中子飞行时间法,利用~(235)U,~(238)U裂变室和~6Li-Si探测器测量了中子能谱和中子注量率,又利用闪烁体-互补金属氧化物半导体探测系统测量了中子束斑的剖面,得到了该束线的初步实验测量结果.其中白光中子的全能谱测量范围eV—100 MeV,给出了不确定度分析;给出了中子注量率两个实验厅位置的满功率值;给出了白光中子在直径60 mm情况下的全能区束斑.通过与模拟结果的比较探讨了以上结果的合理性,并提出了改进计划.这些实验结果为以后该束线的核数据测量和探测器标定实验奠定了基础.     

A stopping layer concept to improve the spatial resolution of gas-electron-multiplier neutron detector

In recent years, gas electron multiplier (GEM) neutron detectors have been developing towards high spatial resolution and high dynamic counting range. We propose a novel concept of an Al stopping layer to enable the detector to achieve sub-millimeter (sub-mm) spatial resolution. The neutron conversion layer is coated with the Al stopping layer to limit the emission angle of ions into the drift region. The short track projection of ions is obtained on the signal readout board, and the detector would get good spatial resolution. The spatial resolutions of the GEM neutron detector with the Al stopping layer are simulated and optimized based on Geant4GarfieldInterface. The spatial resolution of the detector is 0.76 mm and the thermal neutron detection efficiency is about 0.01% when the Al stopping layer is 3.0 μ m thick, the drift region is 2 mm thick, the strip pitch is 600 μ m, and the digital readout is employed. Thus, the GEM neutron detector with a simple detector structure and a fast readout mode is developed to obtain a high spatial resolution and high dynamic counting range. It could be used for the direct measurement of a high-flux neutron beam, such as Bragg transmission imaging, very small-angle scattering neutron detection and neutron beam diagnostic.     

Gamma rays from thermal neutron capture in gold

The thermal column of the 10 kW University of Maryland pool reactor was used as the neutron source for this nuclear spectroscopy study. A 40 cm³ lithium drifted germanium crystal was the gamma (γ) ray detector used to measure the high energy prompt photon emissions from thermal neutron capture. The energy region was from 2.6–7.0 MeV. New capture gamma ray lines were observed.     

基于3.5 MeV射频四极质子加速器硼中子俘获治疗装置的束流整形体设计

在硼中子俘获治疗(BNCT)装置中,束流整形体(BSA)的作用是将中子源产生的快中子束流慢化至超热中子能区(0.5 eVE10 keV),并尽可能减弱快中子、热中子和γ射线的成分,同时保证中子的方向性,其设计与优化是BNCT装置设计工作的核心内容之一.本文采用3.5 MeV,10 mA的质子束轰击锂靶,由核反应~7Li(p,n)~7Be产生的中子为源项,针对BSA的慢化体材料和结构、γ屏蔽层和热中子吸收层的厚度等参数进行蒙特卡罗模拟设计与优化.研究发现,采用Fluental和LiF两种慢化材料间隔2 cm层状堆叠的三明治BSA构型,在保证快中子剂量成分(D_f/φ_(epi)),γ剂量成分(D_γ/φ_(epi))和热中子比例φ_(th)/φ_(epi)满足IAEA-TECDOC-1223报告推荐要求的同时,在BSA出口处超热中子注量率优于单独使用Fluental和单独使用LiF的BSA设计.BSA出口处修正的Synder人头几何模型中的剂量分布计算结果显示:上述三明治构型的深度剂量分布与单独使用Fluental材料构型的结果基本相当,优于单独使用LiF构型,表明Fluental和LiF层状堆叠的三明治BSA构型是一种可行的BSA结构.     

Design of the thermal neutron detection system for CJPL-Ⅱ

A low background thermal neutron flux detection system has been designed to measure the ambient thermal neutron flux of the second phase of the China Jinping Underground Laboratory(CJPL-Ⅱ),right after completion of the rock bolting work.A ~3He proportional counter tube combined with an identical ~4He proportional counter tube was employed as the thermal neutron detector,which has been optimised in energy resolution,wall effect and radioactivity of construction materials for low background performance.The readout electronics were specially designed for long-term stable operation and easy maintenance in an underground laboratory under construction.The system was installed in Lab Hall No.3 of CJPL-Ⅱ and accumulated data for about 80 days.The ambient thermal neutron flux was determined under the assumption that the neutron field is fully thermalized,uniform and isotropic at the measurement position.     

Characterization of monoenergetic neutron reference fields with a high resolution diamond detector

A novel radiation detector based on an artificial single crystal diamond was used to characterize in detail the energy distribution of neutron reference fields at the Physikalisch-Technische Bundesanstalt (PTB) and their contamination with charged particles. The monoenergetic reference fields at PTB in the neutron energy range from 1.5 MeV up to 19 MeV are generated by proton and deuteron beams impinging on solid and gas targets of tritium and deuterium. The energy of the incoming particles and the variation of the angle under which the measurement is performed produce monoenergetic reference fields with different mean energies and line shapes. Well established simulation codes allow these parameters to be calculated in detail, provided the properties of the targets are known.In this paper we present high resolution neutron spectrometry measurements of different monoenergetic reference fields. The results are compared with calculated spectra taking into account the actual target parameters. The influence of deviations from the ideal case, e.g. a non homogeneous tritium distribution in a solid Ti/T-target, was investigated. Line structures in the order of 80 keV for a neutron energy of 9 MeV were resolved. The shift of the mean energy and the increasing of the width of the neutron peak with increasing pressure in the gas target in the order of 30 keV were measured.Another result is the determination of the contamination of the neutron field at 14 MeV with high energy charged particles (protons) from side reactions inside the T-target. This effect is due to the thin backing of the targets in use at PTB. It depends on the age of the target and it has to be taken into consideration for irradiations at small distances for some detectors, especially when very old targets are used.The experiments have shown that this detector is an easy to operate compact neutron spectrometer with extremely good energy resolution and that detailed structures in the line shapes of monoenergetic neutron fields can be resolved without using time-of-flight techniques.     

新型涂硼热中子MWPC探测器的时间信号读出方法

基于10B薄膜的二维灵敏探测器是新近发展起来的热中子探测器,其灵敏面积大,时间和位置分辨好,n/抑制能力高,抗辐射能力强,可二维读出且具有良好的耐计数能力。针对新型的涂硼灵敏热中子多丝正比（MWPC）探测器,在延迟线时间差方法的基础上,提出一种中子击中位置数字信息的读出方法,并设计NIM读出插件用以验证该方法对于二维中子探测位置信息的读出能力。测试结果表明,本方法能完成4通道探测器信号的实时测量,其时间测量精度好于50 ps。结合FPGA片上系统实时数据控制和处理技术,单插件可支持最高1.3MHz的探测计数率。