Proton radiation effect on GaAs/AlGaAs core–shell ensemble nanowires photo-detector

We demonstrate that the GaAs/AlGaAs nanowires(NWs) ensemble is fabricated into photo-detectors. Current–voltage(I–V) characteristics are measured on Ga As/Al Ga As core–shell ensemble NW photo-detectors at room-temperature before and after 1-MeV proton irradiation with fluences from 1.0 × 10~(13) cm~(-2) to 5.0 × 10~(14) cm~(-2). The degradation of photocurrent suggests that the point defects induced by proton radiation could cause both carrier lifetime and carrier mobility to decrease synchronously. Comparing with a GaAs quantum well, the degradations of light and dark current for the irradiated NWs photo-detector indicate that NWs material is a preferable potential candidate for space applications.     

Copper Ion Beam Irradiation-Induced Effects on Structural,Morphological and Optical Properties of Tin Dioxide Nanowires

The 0.8 MeV copper(Cu) ion beam irradiation-induced effects on structural,morphological and optical properties of tin dioxide nanowires(SnO_2 NWs) are investigated.The samples are irradiated at three different doses5 × 10~(12) ions/cm~2,1 × 10~(13) ions/cm~2 and 5 × 10~(13) ions/cm~2 at room temperature.The XRD analysis shows that the tetragonal phase of SnO_2 NWs remains stable after Cu ion irradiation,but with increasing irradiation dose level the crystal size increases due to ion beam induced coalescence of NWs.The FTIR spectra of pristine SnO_2NWs exhibit the chemical composition of SnO_2 while the Cu-O bond is also observed in the FTIR spectra after Cu ion beam irradiation.The presence of Cu impurity in SnO_2 is further confirmed by calculating the stopping range of Cu ions by using TRM/SRIM code.Optical properties of SnO_2 NWs are studied before and after Cu ion irradiation.Band gap analysis reveals that the band gap of irradiated samples is found to decrease compared with the pristine sample.Therefore,ion beam irradiation is a promising technology for nanoengineering and band gap tailoring.     

Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor

This paper presents an investigation into the impact of proton-induced alteration of carrier lifetime on the singleevent transient(SET) caused by heavy ions in silicon–germanium heterojunction bipolar transistor(SiGe HBT).The ioninduced current transients and integrated charge collections under different proton fluences are obtained based on technology computer-aided design(TCAD) simulation.The results indicate that the impact of carrier lifetime alteration is determined by the dominating charge collection mechanism at the ion incident position and only the long-time diffusion process is affected.With a proton fluence of 5 × 10~(13) cm~(-2), almost no change is found in the transient feature, and the charge collection of events happened in the region enclosed by deep trench isolation(DTI), where prompt funneling collection is the dominating mechanism.Meanwhile, for the events happening outside DTI where diffusion dominates the collection process, the peak value and the duration of the ion-induced current transient both decrease with increasing proton fluence, leading to a great decrease in charge collection.     

Degradation of β-Ga_2O_3 Schottky barrier diode under swift heavy ion irradiation

The electrical characteristics and microstructures of β-Ga_2 O_3 Schottky barrier diode(SBD) devices irradiated with swift heavy ions(2096 Me V Ta ions) have been studied. It was found that β-Ga_2 O_3 SBD devices showed the reliability degradation after irradiation, including turn-on voltage Von, on-resistance Ron, ideality factor n, and the reverse leakage current density Jr. In addition, the carrier concentration of the drift layer was decreased significantly and the calculated carrier removal rates were 5 × 10~6–1.3 × 10~7 cm~(-1). Latent tracks induced by swift heavy ions were observed visually in the whole β-Ga_2 O_3 matrix. Furthermore, crystal structure of tracks was amorphized completely. The latent tracks induced by Ta ions bombardments were found to be the reason for the decrease in carrier mobility and carrier concentration. Eventually,these defects caused the degradation of electrical characteristics of the devices. In terms of the carrier removal rates, theβ-Ga_2 O_3 SBD devices were more sensitive to swift heavy ions irradiation than Si C and Ga N devices.     

Structure and luminescence of α-plane GaN on γ-plane sapphire substrate modified by Si implantation

We show the structural and optical properties of non-polar a-plane Ga N epitaxial films modified by Si ion implantation.Upon gradually raising Si fluences from 5×10~(13)cm~(-2)to 5×10~(15)cm~(-2),the n-type dopant concentration gradually increases from 4.6×10~(18)cm~(-2)to 4.5×10~(20)cm~(-2),while the generated vacancy density accordingly raises from3.7×10~(13)cm~(-2)to 3.8×10~(15)cm~(-2).Moreover,despite that the implantation enhances structural disorder,the epitaxial structure of the implanted region is still well preserved which is confirmed by Rutherford backscattering channeling spectrometry measurements.The monotonical uniaxial lattice expansion along the a direction (out-of-plane direction) is observed as a function of fluences till 1×10~(15)cm~(-2),which ceases at the overdose of 5×10~(15)cm~(-2)due to the partial amorphization in the surface region.Upon raising irradiation dose,a yellow emission in the as-grown sample is gradually quenched,probably due to the irradiation-induced generation of non-radiative recombination centers.     

Influence of UV-Irradiation on Latent Tracks in Polyethylene Terephthalate Films

Polyethylene terephthalate(PET) films in thickness of 12/μm are irradiated by Xe and Au ions at the energies of9.5 and 11.4MeV/u and with the ion fluence from 5 × 10~9 cm~(-2) to 1 × 10~(11) cm~(-2).After irradiation,ultra-violet lights are used to illuminate the samples with latent trades at the wavelength of 365 nm with flux density of4.2mW/cm~(-2).UV-irradiation effects on tracked PET are investigated by the UV-vis spectrum and positron annihilation lifetime spectroscopy(PALS).It is found that carbonaceous clusters in PET films are generated by ion irradiation and decomposed with UV illumination by calculating the optical energy band gap E_g in the UV-vis spectrum.The free volumes behave differently in track and bulk after UV illumination.In our experiment,the PALS results show an increase in radius and density of free volume in tracked PET films after UV treatment,which indicates an expansion in radius of latent tracks.     

Crystal growth,spectroscopic characteristics,and Judd–Ofelt analysis of Dy:Lu_2O_3 for yellow laser

Dy:Lu_2O_3 was grown by the float-zone(Fz) method. According to the absorption spectrum, the Judd–Ofelt(JO) parameters ?_2, ?_4, and ?_6 were calculated to be 4.86 × 10~(-20) cm~2, 2.02 × 10~(-20) cm~2, and 1.76 × 10~(-20) cm~2, respectively.The emission cross-section at 574 nm corresponding to the ~4F6_(9/2)→~6H_(13/2) transition was calculated to be 0.53 × 10~(-20) cm~2.The yellow(~4F_(9/2)→~6H_(13/2) transition) to blue(~4F_(9/2)→~6H_(15/2) transition) intensity ratio ranges up to 12.9. The fluorescence lifetime of the ~4F_(9/2) energy level was measured to be 112.1 μs. These results reveal that Dy:Lu_2O_3 is a promising material for use in yellow lasers.     

Irradiation Effects on the Retention of Hydrogen in Al_2O_3

Substantial defects are produced in Al_2O_3 by 4 MeV Au ion irradiation with a fluence of 4.4 × 10~(15) cm~(-2).Rutherford backscattering spectrometry/channeling and cross-sectional transmission electron microscopy methods are used to investigate the irradiation damage.The 190 keV H ions with a fluence of 1 × 10~(17) cm~(-2) are used for implanting pristine and Au ion irradiated Al_2O_3 to explore the irradiation damage effects on the hydrogen retention in Al_2O_3.The time-of-flight secondary ion mass spectrometry method is used to obtain the single hydrogen depth profile and ions mass spectra(IMS),in which we find that implanted hydrogens interacted with defects produced by Au ion irradiation.In IMS,we also obtain the hydrogen retention at a certain depth.Comparing the hydrogen retention in different Al_2O_3 samples,it is concluded that the irradiation damage improves the tritium permeation resistance property of Al_2O_3 under given conditions.This result means that Al_2O_3 may strengthen its property of reducing tritium permeation under the harsh irradiation environment in fusion reactors.     

In-plane oriented CH_3NH_3PbI_3 nanowire suppression of the interface electron transfer to PCBM

One-dimensional nanowire is an important candidate for lead-halide perovskite-based photonic detectors and solar cells. Its surface population, diameter, and growth direction, etc., are critical for device performance. In this research,we carried out a detailed study on electron transfer process at the interface of nanowire CH_3 NH_3 PbI_3(N-MAPbI_3)/Phenyl C61 butyric acid methyl-ester synonym(PCBM), as well as the interface of compact CH_3 NH_3 PbI_3(C-MAPbI_3)/PCBM by transient absorption spectroscopy. By comparing the carrier recombination dynamics of N-MAPbI_3, N-MAPbI_3/PCBM,C-MAPbI_3, and C-MAPbI_3/PCBM from picosecond(ps) to hundred nanosecond(ns) time scale, it is demonstrated that electron transfer at N-MAPbI_3/PCBM interface is less efficient than that at C-MAPbI_3/PCBM interface. In addition, electron transfer efficiency at C-MAPbI_3/PCBM interface was found to be excitation density-dependent, and it reduces with photo-generation carrier concentration increasing in a range from 1.0 × 1018 cm~(-3)–4.0 × 1018 cm~(-3). Hot electron transfer,which leads to acceleration of electron transfer between the interfaces, was also visualized as carrier concentration increases from 1.0 × 10~(18) cm~(-3)–2.2 × 10~(18) cm~(-3).     

H-ion Irradiation-induced Annealing in He-ion Implanted 4H-SiC

Radiation-induced defect annealing in He~+ ion-implanted 4 H-SiC via H~+ ion irradiation is investigated by Raman spectroscopy. There are 4 H-SiC wafers irradiated with 230 keV He~+ ions with fluences ranging from 5.0×10~(15) cm~(-2)to 2.0×10~(16) cm~(-2) at room temperature. The post-implantation samples are irradiated by 260 keV H~+ ions at a fluence of 5.0×10~(15) cm~(-2) at room temperature. The intensities of Raman lines decrease after He implantation,while they increase after H irradiation. The experimental results present that the magnitude of Raman line increment is related to the concentration of pre-existing defects formed by He implantation. A strong new peak located near 966 cm~(-1), which is assigned to 3 C-SiC LO(Γ) phonon, is found in the He-implanted sample with a fluence of 5.0×10~(15) cm~(-2) followed by H irradiation. However, for the He-implanted sample with a fluence of2.0×10~(16) cm~(-2) followed by H irradiation, no 3 C-SiC phonon vibrations are found. The detailed reason for H irradiation-induced phase transformation in the He-implanted 4 H-SiC is discussed.     

In0.53Ga0.47As/InP量子阱与体材料的1 MeV电子束辐照光致发光谱研究

为获得对In_0.53Ga_0.47As/InP材料在电子束辐照下的光致发光谱变化规律, 开展了1 MeV电子束辐照试验, 注量为 5×10¹²-9×10¹⁴ cm^-2. 样品选取量子阱材料和体材料, 在辐照前后, 进行了光致发光谱测试, 得到了不同结构In_0.53Ga_0.47As/InP材料在1 MeV电子束辐照下的不同变化规律; 对比分析了参数退化的物理机理. 结果显示: 试验样品的光致发光峰强度随着辐照剂量增大而显著退化. 体材料最先出现快速退化, 而五层量子阱在注量达到6×10¹⁴ cm^-2时, 就已经退化至辐照前的9%. 经分析认为原因有: 1)电子束进入样品后, 与材料晶格发生能量传递, 破坏晶格完整性, 致使产生的激子数量减少, 光致发光强度降低; 电子束辐照在材料中引入缺陷, 增加了非辐射复合中心密度, 导致载流子迁移率降低. 2)量子阱的二维限制作用使载流子运动受限, 从而能够降低载流子与非辐射复合中心的复合概率; 敏感区域截面积相同条件下, 体材料比量子阱材料辐射损伤更为严重. 3)量子阱的层数越多, 则异质结界面数越多, 相应的产生的界面缺陷数量也随之增多, 辐射损伤越严重.     

快重离子辐照对非晶态SiO2薄膜光致发光谱的影响

用湿氧化法在单晶硅表面生长了非晶态SiO2薄膜,再用高能Pb和Xe离子对薄膜进行辐照,最后用荧光光谱分析了辐照参数(剂量、电子能损值)与发光特性改变的相关性.研究发现,快重离子辐照能显著影响薄膜的发光特性,进一步分析显示,辐照导致了SiO2薄膜内O-Si-O缺陷、缺氧缺陷和非桥式氧空位缺陷的产生,且缺氧缺陷和非桥式氧空...     

电离辐射对部分耗尽绝缘体上硅器件低频噪声特性的影响

本文针对辐射前后部分耗尽结构绝缘体上硅(SOI)器件的电学特性与低频噪声特性开展试验研究. 受辐射诱生埋氧化层固定电荷与界面态的影响, 当辐射总剂量达到1 M rad(Si) (1 rad = 10^-2 Gy)条件下, SOI器件背栅阈值电压从44.72 V 减小至12.88 V、表面电子有效迁移率从473.7 cm²/V·s降低至419.8 cm²/V· s、亚阈斜率从2.47 V/dec增加至3.93 V/dec; 基于辐射前后亚阈斜率及阈值电压的变化, 可提取得到辐射诱生界面态与氧化层固定电荷密度分别为5.33×10¹¹ cm^{- 2}与2.36×10¹² cm^-2. 受辐射在埋氧化层-硅界面处诱生边界陷阱、氧化层固定电荷与界面态的影响, 辐射后埋氧化层-硅界面处电子被陷阱俘获/释放的行为加剧, 造成SOI 器件背栅平带电压噪声功率谱密度由7×10^{- 10} V²·Hz^-1增加至1.8×10^-9 V² ·Hz^-1; 基于载流子数随机涨落模型可提取得到辐射前后SOI器件埋氧化层界面附近缺陷态密度之和约为1.42×10¹⁷ cm^-3·eV^-1和3.66×10¹⁷ cm^-3·eV^-1. 考虑隧穿削弱因子、隧穿距离与时间常数之间关系, 本文计算得到辐射前后埋氧化层内陷阱电荷密度随空间分布的变化.     

A cold thermionically emitting dusty air plasma formed by radiativeheating of graphite particulates

Formation of an atmospheric pressure dusty air plasma is explored experimentally in this paper. The plasma is created by seeding an air flow with graphite particles and irradiating the particulates with a focused CO₂ laser beam. The graphite particles are, thus, heated to thermionically emitting temperatures, and average particle temperatures and average particle number densities are measured. The presence of charges is inferred both from these measured quantities using a simple theoretical transient model, and experimentally by applying a dc bias across the irradiated region. It is found that an electron density of ~6.7 × 10⁵ cm^-3 (6.7 × 10¹¹ m^-3) can be produced at steady state in the presence of O₂. This value can be increased to 3.6 × 10⁷ cm^-3 (3.6 × 10¹³ m ^-1) in the ideal case where an electron attachment to O₂ is suppressed and where a lower work function particulate is used     

Structure and luminescence of a-plane GaN on r-plane sapphire substrate modified by Si implantation

We show the structural and optical properties of non-polar a-plane GaN epitaxial films modified by Si ion implantation. Upon gradually raising Si fluences from 5×10¹³ cm^-2 to 5×10¹⁵ cm^-2, the n-type dopant concentration gradually increases from 4.6×10¹⁸ cm^-2 to 4.5×10²⁰ cm^-2, while the generated vacancy density accordingly raises from 3.7×10¹³ cm^-2 to 3.8×10¹⁵ cm^-2. Moreover, despite that the implantation enhances structural disorder, the epitaxial structure of the implanted region is still well preserved which is confirmed by Rutherford backscattering channeling spectrometry measurements. The monotonical uniaxial lattice expansion along the a direction (out-of-plane direction) is observed as a function of fluences till 1×10¹⁵ cm^-2, which ceases at the overdose of 5×10¹⁵ cm^-2 due to the partial amorphization in the surface region. Upon raising irradiation dose, a yellow emission in the as-grown sample is gradually quenched, probably due to the irradiation-induced generation of non-radiative recombination centers.     

LaTiO高k栅介质Ge MOS电容电特性及Ti含量优化

采用共反应溅射法将Ti添加到La_2O_3中,制备了LaTiO/Ge金属-氧化物-半导体电容,并就Ti含量对器件电特性的影响进行了仔细研究.由于Ti-基氧化物具有极高的介电常数,LaTiO栅介质能够获得高k值;然而由于界面/近界面缺陷随着Ti含量的升高而增加,添加Ti使界面质量恶化,进而使栅极漏电流增大、器件可靠性降低.因此,为了在器件电特性之间实现协调,对Ti含量进行优化显得尤为重要.就所研究的Ti/La_2O_3比率而言,18.4%的Ti/La_2O_3比率最合适.该比率导致器件呈现出高k值(22.7)、低D_(it)(5.5×10~(11)eV~(-1)·cm~(-2))、可接受的J_g(V_g=1V,J_g=7.1×10~(-3)A·cm~(-2))和良好的器件可靠性.     

衬底温度对ZnO薄膜的结构和光学特性的影响

利用等离子体辅助分子束外延(P-MBE)设备在蓝宝石衬底上通过改变生长温度,制备了不同的ZnO样品.研究了衬底温度对ZnO的结构、光学和电学性质的影响.样品的晶体结构利用X射线衍射谱进行表征.X射线衍射谱表明,所有的ZnO样品都是(002)取向的六角纤锌矿结构.随着生长温度的升高,X射线的(002)衍射峰的半峰全宽逐渐...     

He离子辐照6H-SiC引入缺陷的光谱研究

实验采用300 keV的He²⁺辐照6H-SiC,辐照温度分别为室温,450,600和750 ℃,辐照剂量范围为1×10¹⁵–1×10¹⁷ cm^-2,辐照完成后对样品进行拉曼散射和紫外可见透射光谱测试与研究. 这两种分析方法的实验结果表明,He离子辐照产生的缺陷以及缺陷的恢复与辐照剂量和辐照温度有着直接关系. 室温下辐照会使晶体出现非晶化,体现在拉曼特征峰消失,相对拉曼强度达到饱和(同时出现了较强的Si-Si峰);高温下辐照伴随着晶体缺陷的恢复过程,当氦泡未存在时,高温辐照很容易导致Frenkel对、缺陷团簇等缺陷恢复,当氦泡存在时,氦泡会抑制缺陷恢复,体现在相对拉曼强度和相对吸收系数曲线斜率的变化趋势上. 本文重点讨论了高温辐照情况下氦泡对缺陷聚集与恢复的影响,并与高温下硅离子辐照碳化硅结果进行了对比. 关键词： 6H-SiC 氦泡 拉曼散射光谱 紫外可见透射光谱     

退火对AlGaInP/GaInP多量子阱 LED外延片性能的影响

采用LP-MOCVD技术在n-GaAs衬底上生长了AlGaInP/GaInP多量子阱红光LED外延片.研究表明退火对外延片性能有重要影响.与未退火样品相比,460℃退火15min,外延片p型GaP层的空穴浓度由5.6×10¹⁸cm^-3增大到6.5×10¹⁸cm^-3,p型AlGaInP层的空穴浓度由6.0×10¹⁷cm^-3增大到1.1×10¹⁸cm^-3.但退火温度为780℃时,p型GaP层和p型AlGaInP层的空穴浓度分别下降至8×10¹⁷cm^-3和1.7×10¹⁷cm^-3,且Mg原子在AlGaInP系材料中的扩散加剧,导致未掺杂AlGaInP/GaInP多量子阱呈现p型电导.在460～700℃退火范围内,并没有使AlGaInP/GaInP多量子阱的发光性能发生明显变化.但退火温度为780℃时,AlGaInP/GaInP多量子阱的发光强度是退火前的2倍.