Experimental study of CF4 conical theta pinch plasmaexpanding into vacuum

Langmuir probe, photodiode, and optical multichannel analyzer (OMA) measurements have been made on a pulsed CF₄ conical theta-pinch plasma. A cloud of CF₄ was puffed into a conical theta-pinch coil, converted to plasma, and propelled into the vacuum region ahead of the expanding gas cloud. At a position 67 cm away from the conical theta-pinch coil, the plasma arrived in separate packets that were about 20 μs in duration. The average drift velocity of these packets corresponded to an energy of about 3 eV. The OMA measurements showed that the second packet contained neutral atomic fluorine as well as charged particles. The electron temperature and ion density in the second packet were 2.0 eV and 1.5×10¹³ cm^-3, respectively. The electron temperature and ion density in the wake plasma were 8.3 eV and 4×10¹¹ cm^-3 , respectively. This device can be used for plasma processing or as a laboratory test of numerical and analytical models of the expansion of plasma into vacuum     

A two-component model for the electron distribution function in ahigh-current pseudospark or back-lighted thyratron

Temperature, energy, and densities of two electron distribution function components, including an isotropic bulk part and an anisotropic beam, are analyzed for a hydrogen pseudospark and/or back-lighted thyratron switch plasma with a peak electron density of 1-3×10¹⁵ cm^-3 and peak current density of ≈10⁴ A/cm². Estimates of a very small cathode-fall width during the conduction phase and high electric field strengths lead to the injection of an electron beam with energies ⩾100 eV and density of 10¹³-10¹⁴ cm^-3 into a Maxwellian bulk plasma. Collisional and radiative processes of monoenergetic beam electrons, bulk plasma electrons and ions, and atomic hydrogen are modeled by a set of rate equations, and line intensity ratios are compared with measurements. Under these high-current conditions, for an initial density n_H2=10¹⁶ cm^-3 and electron temperature of 0.8-1 eV, the estimated beam density is ≈10¹³ -10¹⁴ cm^-3. These results suggest the possibility of producing in a simple way a very high-density electron beam     

温稠密钛电导率计算

温稠密物质是惯性约束核聚变、重离子聚变、Z箍缩动作过程中物质发展和存在的重要阶段. 其热力学性质和辐射输运参数在聚变实验和内爆驱动力学模拟过程中有至关重要的作用. 本文通过建立非理想Saha方程, 结合线性混合规则的理论方法模拟了温稠密钛从10^-5-10 g·cm^-3, 10⁴ K到3×10⁴ K区间的粒子组分分布和电导率随温度密度的变化, 其中粒子组分分布由非理想Saha方程求解得到. 线性混合规则模型计算温稠密钛的电导率时考虑了包括电子、原子和离子之间的多种相互作用. 钛的电导率的计算结果与已有的爆炸丝实验数据相符. 通过电导率随温度密度变化趋势判断, 钛在整个温度区间, 密度0.56 g·cm^-3时发生非金属相到金属相相变. 对于简并系数和耦合系数的计算分析, 钛等离子体在整个温度和密度区间逐渐从弱耦合、非简并状态过渡到强耦合部分简并态.     

衬底温度对ZnO薄膜的结构和光学特性的影响

利用等离子体辅助分子束外延(P-MBE)设备在蓝宝石衬底上通过改变生长温度,制备了不同的ZnO样品.研究了衬底温度对ZnO的结构、光学和电学性质的影响.样品的晶体结构利用X射线衍射谱进行表征.X射线衍射谱表明,所有的ZnO样品都是(002)取向的六角纤锌矿结构.随着生长温度的升高,X射线的(002)衍射峰的半峰全宽逐渐...     

Application of multi-pulse optical imaging to measure evolution of laser-produced counter-streaming flows

A counter-streaming flow system is a test-bed to investigate the astrophysical collisionless shock(CS) formation in the laboratory. Electrostatic/electromagnetic instabilities, competitively growing in the system and exciting the CS formation, are sensitive to the flows parameters. One of the most important parameters is the velocity, determining what kind of instability contributes to the shock formation. Here we successfully measure the evolution of the counter-streaming flows within one shot using a multi-pulses imaging diagnostic technique. With the technique, the average velocity of the high-density-part(ne ≥ 8–9 × 10~(19)cm~(-3)) of the flow is directly measured to be of ～ 10~6cm/s between 7 ns and 17 ns.Meanwhile, the average velocity of the low-density-part(ne ≤ 2 × 10~(19)cm~(-3)) can be estimated as ～ 10~7cm/s. The experimental results show that a collisionless shock is formed during the low-density-part of the flow interacting with each other.     

LaTiO高k栅介质Ge MOS电容电特性及Ti含量优化

采用共反应溅射法将Ti添加到La_2O_3中,制备了LaTiO/Ge金属-氧化物-半导体电容,并就Ti含量对器件电特性的影响进行了仔细研究.由于Ti-基氧化物具有极高的介电常数,LaTiO栅介质能够获得高k值;然而由于界面/近界面缺陷随着Ti含量的升高而增加,添加Ti使界面质量恶化,进而使栅极漏电流增大、器件可靠性降低.因此,为了在器件电特性之间实现协调,对Ti含量进行优化显得尤为重要.就所研究的Ti/La_2O_3比率而言,18.4%的Ti/La_2O_3比率最合适.该比率导致器件呈现出高k值(22.7)、低D_(it)(5.5×10~(11)eV~(-1)·cm~(-2))、可接受的J_g(V_g=1V,J_g=7.1×10~(-3)A·cm~(-2))和良好的器件可靠性.     

等离子体放电活化生理盐水杀菌应用研究

等离子体中含有多种活性物种可实现高效安全杀菌,活性物种与生物体相互作用多在水环境下进行.因此等离子体与水的相互作用过程研究掀起了等离子体生物杀菌的新浪潮.本文采用水中阵列放电产生等离子体活化生理盐水,利用所产生的活化生理盐水对大肠杆菌开展了杀菌消毒研究,当等离子体放电时间达到120 s时产生的活化生理盐水与大肠杆菌混合后可使大肠杆菌的存活效率降至0.001%.通过紫外-可见吸收光谱测量及化学氧化还原沉降滴定表明放电电荷及激发态氧化性活性物种与水溶液相互作用,转化为活化生理盐水中长寿命相对稳定存在的H_2O_2和O_3等氧化性物种,与大肠杆菌作用并主导主要杀菌效果.     

In-plane oriented CH_3NH_3PbI_3 nanowire suppression of the interface electron transfer to PCBM

One-dimensional nanowire is an important candidate for lead-halide perovskite-based photonic detectors and solar cells. Its surface population, diameter, and growth direction, etc., are critical for device performance. In this research,we carried out a detailed study on electron transfer process at the interface of nanowire CH_3 NH_3 PbI_3(N-MAPbI_3)/Phenyl C61 butyric acid methyl-ester synonym(PCBM), as well as the interface of compact CH_3 NH_3 PbI_3(C-MAPbI_3)/PCBM by transient absorption spectroscopy. By comparing the carrier recombination dynamics of N-MAPbI_3, N-MAPbI_3/PCBM,C-MAPbI_3, and C-MAPbI_3/PCBM from picosecond(ps) to hundred nanosecond(ns) time scale, it is demonstrated that electron transfer at N-MAPbI_3/PCBM interface is less efficient than that at C-MAPbI_3/PCBM interface. In addition, electron transfer efficiency at C-MAPbI_3/PCBM interface was found to be excitation density-dependent, and it reduces with photo-generation carrier concentration increasing in a range from 1.0 × 1018 cm~(-3)–4.0 × 1018 cm~(-3). Hot electron transfer,which leads to acceleration of electron transfer between the interfaces, was also visualized as carrier concentration increases from 1.0 × 10~(18) cm~(-3)–2.2 × 10~(18) cm~(-3).     

Microwave resonant-cavity-produced air discharges

Air discharges produced in an Asmussen microwave cavity (0-300 W, 2.45 GHz, CW) between 0.5 and 100 torr were investigated. Gas temperatures (1000-2500 K) were estimated from rotational temperatures obtained from optical emission spectroscopy (OES). These agreed with a simple model of the heat transfer of the gas where joule heating was included as the source term. Vibrational temperatures (3700-7300 K) were also determined from OES and followed the electron energy trends. Electron density (10¹¹-10¹³ cm^-3), collisional frequency (10¹¹-10¹² s^-1), and plasma conductivity (0.09-0.3 (Ω-m)^-1) were calculated from a self-consistent electromagnetic model of the cavity where the plasma was assumed to be a lossy dielectric. Absorbed power, electric, and optical probe measurements were used as the input parameters to the model     

梯度掺杂对n型异质结太阳能电池性能的影响

通过仿真软件AFORS-HET对a-Si:H(p)/i-a-Si:H/c-Si(n)异质结太阳能电池的光伏特性进行分析及优化,主要对比了a-Si:H(p)层的均匀掺杂和表面掺杂浓度D₁=1×10²⁰ cm^-3>界面掺杂浓度D₂=4×10¹⁹ cm^-3的梯度掺杂情况时的光伏特性,实现了在梯度掺杂时22.32%的光电转换效率。与均匀梯度掺杂相比,发射层的梯度掺杂除了引入一个附加电场,还优化了能带结构、光谱响应、表面复合速率。结果表明,梯度掺杂可以有效地改善电池的光电转换性能。     

Plasma parameters within the cathode spot of the vacuum arc

The composition of the vacuum arc plasma for five elements (Cd, Mg, Al, Ni, and Mo) is calculated by the Saha equation, which assumes local thermodynamic equilibrium conditions within the ionization region of the cathode spot(s). The lowering of the ionization potential due to the high density of charged particles is considered. By matching the computed and the measured plasma ionic composition, the electron density and the temperature are estimated. The experimental plasma compositions can be approximated only at a high electron density (10¹⁹-10 ²¹ cm^-3) and at electron temperatures in the range of a few electronvolts     

The type and extent of non-LTE in argon arcs at 0.1-10 bar

A 30-A, 3-mm-diameter, wall-stabilized argon arc with 1% hydrogen is examined spectrometrically at pressures of 0.1-10 bar. Values of T_g, and T_exa diverge as pressure decreases below 5 bar (n_e⩽1×10¹⁷ cm^-3) at r=0. T_exβ is 20-40% larger than the other temperatures. The results are dependent on the transition probability scale used     

Growth condition optimization and mobility enhancement through inserting AlAs monolayer in the InP-based In_xGa_(1-x)As/In_(0.52)Al_(0.48)As HEMT structures

The structure of In P-based In_xGa_(1-x) As/In0.52Al0.48 As pseudomorphic high electron mobility transistor(PHEMT)was optimized in detail.Effects of growth temperature,growth interruption time,Si δ-doping condition,channel thickness and In content,and inserted Al As monolayer(ML) on the two-dimensional electron gas(2DEG) performance were investigated carefully.It was found that the use of the inserted Al As monolayer has an enhancement effect on the mobility due to the reduction of interface roughness and the suppression of Si movement.With optimization of the growth parameters,the structures composed of a 10 nm thick In0.75Ga0.25 As channel layer and a 3 nm thick Al As/In0.52Al0.48 As superlattices spacer layer exhibited electron mobilities as high as 12500 cm~2·V-1·s~(-1)(300 K) and 53500 cm~2·V~(-1_·s~(-1)(77 K) and the corresponding sheet carrier concentrations(Ns) of 2.8×10~(12)cm~(-2)and 2.9×1012cm~(-2),respectively.To the best of the authors' knowledge,this is the highest reported room temperature mobility for In P-based HEMTs with a spacer of 3 nm to date.     

A simulation study on p-doping level of polymer host material in P3HT:PCBM bulk heterojunction solar cells

In this study,we investigate the influence of doping on the charge transfer and device characteristics parameters in the bulk heterojunction solar cells based on poly(3-hexylthiophene)(P3HT) and a methanofuUerene derivative(PCBM).Organic semiconductors are also known to be not pure and they have defects and impurities,some of them are being charged and act as p-type or n-type dopants.Calculations of the solar cell characteristics parameters versus the p-doping level have been done at three different n-dopings(N_d) that consist of 5 × 10~(17) cm~(-3),10~(18) cm~(-3),and 5 × 10~(18) cm~(-3).We perform the analysis of the doping concentration through the drift-diffusion model,and calculate the current and voltage doping dependency.We find that at three different n-dopant levels,optimum p-type doping is about N_p = 6 × 10~(18) cm~(-3).Simulation results have shown that by increasing doping level,V_(oc) monotonically increases by doping.Cell efficiency reaches its maximum at somewhat higher doping as FF has its peak at N_p = 3 × 10~(18) cm~(-3).Moreover,this paper demonstrates that the optimum value for the p-doping is about N_p = 6 × 10~(18) cm~(-3) and optimum value for n-dopant is N_d = 10~(18) cm~(-3),respectively.The simulated results confirm that doping considerably affects the performance of organic solar cells.     

Photo-ionized lithium source for plasma accelerator applications

A photo-ionized lithium source is developed for plasma acceleration applications. A homogeneous column of lithium neutral vapor with a density of 2×10^15-3 is confined by helium gas in a heat-pipe oven. A UV laser pulse ionizes the vapor. In this device, the length of the neutral vapor and plasma column is 25 cm. The plasma density was measured by laser interferometry in the visible on the lithium neutrals and by CO₂ laser interferometry on the plasma electrons. The maximum measured plasma density was 2.9×10 ¹⁴ cm^-3, limited by the available UV fluence (≈83 mJ/cm²), corresponding to a 15% ionization fraction. After ionization, the plasma density decreases by a factor of two in about 12 μs. These results show that such a plasma source is scaleable to lengths of the order of 1 m and should satisfy all the requirements for demonstrating the acceleration of electrons by 1 GeV in a 1-GeV/m amplitude plasma wake     

Validity conditions for complete and partial local thermodynamicequilibrium of nonhydrogenic level systems and their application tocopper vapor arcs in vacuum

Validity conditions for complete and partial local thermodynamic equilibrium (CLTE and PLTE) of homogeneous, time-dependent, and optically thin plasmas are derived. For Cu I, electron densities of n_e⩾(5×10²²-5×10²³ ) m^-3 are required for the establishment of CLTE. For Cu I and Cu II, n_e⩾(5×10²¹-5×10²¹ -5×10²²) m^-3 is necessary for PLTE (for electron temperatures of 1-2 eV). Application to low-current copper vapor arcs in vacuum shows that CLTE can be expected for r<200-600 μm (r=distance from the cathode spot). A further limitation follows for temperatures of 2 eV or higher if diffusion effects are taken into consideration. Consequently, the use of the LTE formulas in plasma spectroscopy of low-current vacuum arcs is very limited     

Self-consistent current motion of electrons and ions inhigh-current plasma channel

This paper analyses a self-consistent current motion of charged particles in high-current plasma channel. Application of the results obtained to real current channels is possible provided that pair collisions do not considerably affect the current motion of plasma charged particles and the depth of the current layer is small as compared to the channel radius. The approximation adopted in this paper can be considered to be true, for instance, in the case of hydrogen channels with millimeter radius and electron energy of the order of 10 keV provided that the plasma concentration in them is in the range of 10 ¹⁷ cm^-3e<10²⁰ cm^-3. In the present paper, advantage is taken of a kinetic plasma model with electrons and ions in the form of particle beams whose motion is governed by the resulting self-consistent electromagnetic field. It is shown that in a plasma with sufficiently high particle concentration, when the collisionless skin depth is small as compared to the channel radius, the ion motion results in the negative electron contribution to the total channel current. Moreover, the ion component of the current exceeds the total current. This is accompanied by high-speed plasma motion in the form of the electroneutral axial flux, whose direction coincides with that of the total channel current     

退火对AlGaInP/GaInP多量子阱 LED外延片性能的影响

采用LP-MOCVD技术在n-GaAs衬底上生长了AlGaInP/GaInP多量子阱红光LED外延片.研究表明退火对外延片性能有重要影响.与未退火样品相比,460℃退火15min,外延片p型GaP层的空穴浓度由5.6×10¹⁸cm^-3增大到6.5×10¹⁸cm^-3,p型AlGaInP层的空穴浓度由6.0×10¹⁷cm^-3增大到1.1×10¹⁸cm^-3.但退火温度为780℃时,p型GaP层和p型AlGaInP层的空穴浓度分别下降至8×10¹⁷cm^-3和1.7×10¹⁷cm^-3,且Mg原子在AlGaInP系材料中的扩散加剧,导致未掺杂AlGaInP/GaInP多量子阱呈现p型电导.在460～700℃退火范围内,并没有使AlGaInP/GaInP多量子阱的发光性能发生明显变化.但退火温度为780℃时,AlGaInP/GaInP多量子阱的发光强度是退火前的2倍.     

基于旋涂法和电子束蒸发法制备的V2O5/Ag/V2O5叠层透明导电薄膜

利用溶胶-凝胶技术与电子束蒸镀相结合的方法在常温下制备了叠层V₂O₅/Ag/V₂O₅（VAV）透明导电薄膜,研究了各层薄膜厚度对叠层结构光电特性的影响。用原子力显微镜、紫外-可见光分光光度计、四探针电阻仪及开尔文探针对样品的表面形貌、光电性能及功函数等性质进行了表征。实验结果表明,该薄膜具有良好的光学和电学性质,可见光（380~780 nm）平均透过率达75%,迁移率为16.89 cm²/（V·s）,载流子浓度为－1.043×10²² cm^-3,方块电阻值为15.1 Ω/□,功函数为5.17 eV。该制备方法降低了V₂O₅薄膜的工艺制备难度,为该材料在太阳能电池中的应用创造了良好的前期基础。     

Li+离子掺杂对红色发光材料Y2(W,Mo)O6:Eu3+发光性能的影响

采用高温固相法制备了荧光粉Y2-x(W,Mo)O6:Eu3+,xLi+,利用X射线衍射仪和电子扫描显微镜对样品的结构和形貌进行了表征,并利用荧光光谱法分析了样品的光谱特性.首先在Y2WO6中掺入少量的Mo6+离子,掺入Mo6+后增加了原Y2WO6:Eu3+的激发光谱在近紫外光区的吸收,扩展了激发光谱的谱宽,但却使Y2W...