电子自旋辅助实现光子偏振态的量子纠缠浓缩

量子纠缠浓缩可以将非最大的纠缠态转变为最大纠缠态,提高量子通信的安全性.本文基于圆偏振光和量子点-腔系统的相互作用,用一个单光子作为连接远距离纠缠光子对的桥梁,在理想条件下实现了光子偏振纠缠态的浓缩.计算结果显示,这个纠缠浓缩方案在考虑耦合强度和腔泄漏的情况下也可以保持较高的保真度,而且不需要知道部分纠缠态的初始信息,也不必重复执行纠缠浓缩过程.这不仅提高了量子纠缠浓缩的安全性,也有助于通过消耗最少的量子资源来实现高效的量子信息处理.     

"量身定做"单光子波包:在量子网络中控制光子/自旋量子界面

文章简要地介绍了如何在量子网络中控制量子界面动力学以实现静态量子比特和动态量子比特的相互转换．具体言之，该界面由半导体量子点、固体光学微腔以及光学波导管构成，静态及动态比特分别为量子点中的电子自旋和波导管中的单光子波包所携带．界面动力学的控制则是基于对量子点、微腔和波导管耦合系统的量子电动力学的严格求解．据此可实现网络中两个远距离节点间的量子态传输、交换以及确定性的建立量子纠缠等量子操作．上述量子界面亦可用于任意指定波形的单光子源或者单光子探测装置。     

二维GaAs 基光子晶体微腔的制作与光谱特性分析

研究了以InAs量子点为有源区的二维GaAs基光子晶体微腔的设计与制作,测试并分析了室温下微腔的光谱特性.观察到了波长约为1137 nm,谱线半高宽度约为1 nm的尖锐低阶谐振模式发光峰.我们比较了不同刻蚀条件下光子晶体微腔的发光谱线,结果表明空气孔洞截面的垂直度是影响光子晶体微腔发光特性的重要因素之一.通过调节干法刻蚀工艺,改变空气孔半径与晶格常数的比率,可以在较大范围内调节谐振模式发光峰位置,达到谐振模式与量子点发光峰调谐的目的.     

单量子点的发光与应用EI北大核心CSCD

由于量子限制效应,自组装半导体单量子点具有类似于原子的分立能级,可实现高不可分辨、高亮度和高纯度的单光子发射,其多种激子态能够产生不同偏振模式的光子。而光学微纳结构是调控量子点发光性质的有效手段,当单个量子点与光学微腔发生弱耦合时,Purcell效应将大大提高量子点作为单光子源或纠缠光子对源的性能。同时,量子点与光学微腔的强耦合系统可以作为量子光学网络中的量子节点,以及用于研究单光子水平的光学非线性效应。利用量子点与光学波导的耦合可实现固态量子比特和飞行光子比特的相干转换,以及高效的信息处理与传输,由此构建可靠的片上光学网络。此外,单量子点还具有可操控的自旋态,可作为量子比特的载体。考虑到量子点器件的制备过程易与成熟的半导体技术相结合,基于量子点的器件设计具有良好的可扩展性和集成化潜力。     

微腔增强发射的半导体量子点单光子源

单光子源是实现量子密匙分配、线性光学量子计算的基本单元。作者回顾了单光子源在量子信息科学发展中的作用,讨论了光子的统计特性,分析了具有类似原子二能级结构的半导体量子点作为单光子发射源的特点,介绍了微腔与二能级系统的耦合以及微腔量子电动力学基本原理。在弱耦合区,Purcell效应导致微腔中量子点激子复合寿命降低,因此可用微腔来改善量子点单光子发射效率。文章总结了近年来在半导体微腔增强量子点单光子发射领域的进展,探讨了分布式布拉格反射微腔、柱状微腔和光子晶体微腔等结构对改善半导体量子点单光子发射和收集效率、光子极化以及光子全同性等方面的作用,并对未来半导体量子点单光子源的发展进行了展望。     

基于电光效应的光子频移研究

系统分析了如何通过电光调制的方式来消除量子点纠缠光源中不同偏振模式光子之间的频率差异,并实际设计了一套泡克耳斯盒电光调制方案,通过给其加载约8 V/ns的上升沿或下降沿电压,实现了18 MHz带宽的光子频率的移动.表明只需增大调制电压斜率,便可以有效实现GHz以上的频率移动,为未来实现确定性完美的量子点纠缠光源提供了切实可行的依据.     

等效零折射率材料微腔中均匀化腔场作用下的简正模劈裂现象

研究了零折射率材料微腔中人造原子与腔模的相干耦合现象.首先通过数值模拟的方法研究了在二维光子晶体微腔中填充阻抗匹配的零折射率材料后腔模的场分布.结果表明零折射率材料的引入使得原本以驻波场形式存在的腔模分布在整个微腔中变得近似均匀且值最大.其次,将人造原子放入腔中的不同位置并与腔模耦合,结果从频谱上观察到腔模的劈裂与人造原子在腔中的位置无关.最后,利用微波实验,通过开口谐振环等效的人造原子与一维复合左右手传输线等效的零折射率材料微腔之间的耦合验证了仿真结果的准确性.该结果为腔量子电动力学中量子点对位难的问题提供了新的方案,同时零折射率材料微腔也为今后研究原子与光子之间的相互作用提供了一个新的平台.     

半导体自组织量子点量子发光机理与器件

介绍了自组织量子点单光子发光机理及器件研究进展.主要内容包括：半导体液滴自催化外延GaAs纳米线中InAs量子点和GaAs量子点的单光子发光效应、自组织InAs/GaAs量子点与分布布拉格平面微腔耦合结构的单光子发光效应和器件制备,单量子点发光的共振荧光测量方法、量子点单光子参量下转换实现的纠缠光子发射、单光子的量子存储效应以及量子点单光子发光的光纤耦合输出芯片制备等.     

量子点操控的光子探测和圆偏振光子发射

半导体量子点是研究光子与电子态相互作用的优选固态体系,并在光子探测和发射两个方向上展现出独特的技术机遇.其中基于量子点的共振隧穿结构被认为在单光子探测方面综合性能最佳,但受到光子数识别、工作温度两个关键性能的制约.利用腔模激子态外场耦合效应,有望获得圆偏振态可控的高频单光子发射.本文介绍作者提出的量子点耦合共振隧穿（QD-cRTD）的光子探测机理,利用量子点量子阱复合电子态的隧穿放大,将QD-cRTD光子探测的工作温度由液氦提高至液氮条件,光电响应的增益达到10⁷以上,并具备双光子识别能力;同时,由量子点能级的直接吸收,原型器件获得了近红外的光子响应.在量子点光子发射机理的研究方面,作者实现了量子点激子跃迁和微腔腔模共振耦合的磁场调控,在Purcell效应的作用下增强激子自旋态的自发辐射速率,从而增强量子点中左旋或右旋圆偏振光的发射强度,圆偏度达到90%以上,形成一种光子自旋可控发射的新途径.     

半导体InAs量子点单光子发射器件

文章概述了量子点单光子源的研究现状,综述了微腔量子点耦合单光子发射器件制备中关键的低密度InAs量子点外延技术,单量子点单光子发射二阶关联函数HBT检测方法,分布布拉格反馈微腔结构的制备以及实现液氮温度下电驱动微腔量子点单光子发射器件等研究结果.     

平板光子晶体微腔缺陷模的计算

采用时域有限差分方法结合群论知识,得到平板光子晶体微腔的缺陷模分布.采用对称化边界条件,首先通过宽频脉冲求解微腔所具有的缺陷频率,其次,对于确定缺陷频率,采用窄频脉冲保证只能激发所要求解的-个模式,将空间的电磁场值进行离散傅立叶变换求解其模场分布.计算结果表明,该方法能求解出微腔所有的缺陷模式.     

光子晶体微腔中高偏振单偶极模的研究

三角晶格排列的光子晶体微腔中的偶极模式是简并的,通过改变其晶格的对称性可以消除模式简并.晶格的整体形变破坏了晶格对称性从而影响光场的分布,同时还改变了电磁场的偏振分布.晶格整体形变使得简并的偶极模式分离成x极和y极偶极模式.通过计算分析发现分离后的模式具有良好的偏振特性,从而为实现单偏振光子晶体激光器提供了一种很好的途径.文中针对光子晶体薄板结构的微腔,主要计算了偶极模中x极偶极模式在不同拉伸时以及不同填充因子情况下的Q值,并分别计算了x关键词： 光子晶体 偶极模 品质因子 偏振度     

立体耦合光子晶体薄板微腔的高Q值特性研究

利用微腔之间的立体耦合,提出了基于无源材料硅的双层光子晶体薄板H1(DLPCS-H1)腔,薄板之间为空气层.使用三维时域有限差分方法和Padé近似方法分析了DLPCS-H1腔的偶极模的场分布和品质因子.通过对中间空气层高度的优化使DLPCS-H1腔的偶极模的品质因子得到了显著的提高,大约为单层光子晶体薄板H1腔的偶极模的品质因子的4倍.此外,还研究了三层光子晶体薄板H1腔,它的偶极模的品质因子约为单层光子晶体薄板H1腔的偶极模的品质因子的7倍.     

High Polarization Single Mode Photonic Crystal Microlaser

Generally, dipole mode is a doubly degenerate mode. Theoretical calculations have indicated that the single dipole mode of two-dimensional photonic crystal single point defect cavity shows high polarization property. We present a structure with elongated lattice, which only supports a single y-dipole mode. With this structure we can eliminate the degeneracy, control the lasing action of the cavity and demonstrate the high polarization property of the single dipole mode. In our experiment, the polarization extinction ratio of the y-dipole mode is as high as 51：1.     

Quality factor for localized defect modes in a photonic crystal slab upon a low-index dielectric substrate

Localized defect modes in a two-dimensional photonic crystal slab upon a SiO(2) substrate have been analyzed by a numerical simulation of dipole radiation based on the finite-difference time-domain method. A degenerate pair of the defect mode of E(1) spatial symmetry was found in a pseudogap in the spectrum of dipole radiation. We achieved a quality factor as large as 800 by optimizing the sample geometry.     

有效折射率微扰法研究单缺陷光子晶体平板微腔的性质

应用有效折射率微扰法结合二维/三维平面波方法研究了施主和受主缺陷型H1微腔的性质, 使用修正后的有效折射率可以准确地计算微腔的腔模频率, 与三维全矢量时域有限差分法的计算结果很相近. 对于施主型H1微腔, 以介质带边为匹配标准修正的有效折射率计算的微腔腔模频率误差最小, 而对于受主型H1微腔, 匹配标准则应设置为中间带. 有效折射率微扰法既可以将计算的维度从三维降到二维, 大大减少计算所需的计算机内存和时间, 又可以保持计算结果的准确性, 这对于光子晶体微腔的广泛应用具有非常重要的价值.     

Positioning photonic crystal cavities to single InAs quantum dots

We have investigated the optical properties of planar photonic crystal cavities formed by removing a single hole from a two-dimensional square lattice of air holes etched through a thin GaAs slab. We have demonstrated cavity resonances with quality factors (Q’s) as high as 8500, using an internal light source provided by an ensemble of InAs quantum dots (QDs) grown by molecular beam epitaxy (MBE). The high-Q modes are confined to a very small mode volume, V = 0.7(λ/n)³, making them attractive to study in the context of cavity quantum electrodynamics with single QDs, where a high is needed to observe the strong coupling between an electronic state of the dot and the optical cavity mode. To this end, we have developed an accurate and robust alignment technique that positions a photonic crystal cavity to a single QD with 25 nm resolution. We present the details of this new technology and demonstrate its effectiveness by strategically positioning a number of QDs within photonic crystal cavities at points where the electric field intensity is high.     

Designing of a polarization beam splitter for the wavelength of 1310 nm on dual-core photonic crystal fiber with high birefringence and double-zero dispersion

We have proposed a novel kind of photonic crystal fiber which contains two asymmetric cores. The bireti＇ingence and the dispersion are numerically analyzed based on finite element method when the size of the air holes and the pitch of two adjacent air holes are changed. It is shown that the proposed photonic crystal fiber has high birefringence up to the order of 10-2 and double-zero dispersion points are at the wavelengths of 1310 nm and 800 rim, simultaneously. At the same time, the normalized power and the extinction ratios of the proposed photonic crystal fiber have been simulated. It is demonstrated that, at the wavelength of 1310 rim, the x-polarized mode and the y-polarized mode are separated when the propagation distance is 2.481 ram.     

Charge controlled self-assembled quantum dots coupled to photonic crystal nanocavities

The system of charge controlled self-assembled quantum dots coupled to high-Q photonic crystal cavity modes is studied. The quantum dots are embedded in a p-i-n diode structure. Different designs of photonic crystal cavities are used, namely H1 and L3 and the Purcell effect is demonstrated. Furthermore, the fine tuning of the H1 cavity design is studied in order to achieve far field emission profiles that result in higher collection efficiency. An increase in the overall signal from the quantum dot when it is coupled to a cavity is observed, due to the Purcell effect and the improved collection efficiency. This together with the deterministic charging of the quantum dot that is demonstrated, can be used for a single electron spin measurement.     

Engineering silicon-based photonic crystal cavities for NV-center quantum information processing

Silicon slab photonic crystal micro cavities designed for of-resonant coupling to nitrogen vacancy (NV) centers were simulated and fabricated. FDTD-simulations show the partial density of states spectrally near the NV-center electric dipole transition can be tuned to reduce decoherence of an excited NV-center despite this transition being above the silicon electronic band gap. The partial density of states at the NV-center transition can be made to dip below half of the free-space partial density of states without significantly affecting the cavity mode quality factor. These promising results sustain the merits of using silicon as a base photonic crystal material for quantum information processing even when integrated emitters radiate above the electronic band gap of silicon.