ZnO/Diamond/Si结构中声表面波传播特性分析

基于递归刚度矩阵方法, 建立了多层结构声表面波表面有效介电常数模型, 计算出了ZnO/Si结构声表面波的相速度频散特性, 与实验结果符合较好, 表明本文所建模型的准确性和有效性. 进一步计算得到了三层结构(ZnO/Diamond/Si)声表面波的相速度和机电耦合系数的频散规律, 获得此结构最优的高波速和高机电耦合系数组合及达到最优组合所需控制的变量, 为高频高性能声表面波器件设计和优化提供了有益参考. 关键词： 声表面波 多层结构 递归刚度矩阵 表面有效介电常数     

磁控溅射制备ZnO薄膜及其声表面波特性

通过射频磁控溅射技术在GaAs，Au/GaAs，Si和玻璃基片上成功制备了ZnO多晶薄膜，利用X射线衍射对ZnO薄膜的取向、结晶性进行了表征，结果表明ZnO薄膜呈完全c轴取向，Au缓冲层可以有效地改善ZnO薄膜的晶体质量，X射线摇摆曲线结果表明ZnO(002)衍射峰的半高宽仅为2.41°，同时发现Au缓冲层的结晶质量对ZnO薄膜的c轴取向度有很大影响，通过扫描电子显微镜对ZnO/GaAs和ZnO/Au/GaAs薄膜的表面形貌进行了观测，利用网络分析仪对IDT/ZnO/GaAs薄膜的声表面波特性进行了测量. 关键词： ZnO薄膜 X射线衍射 声表面波     

表征超大规模集成电路互连纳米薄膜硬度特性的声表面波的频散特性

利用声表面波(SAW)的频散特性来表征超大规模集成电路(ULSI)互连系统中低介电常数(k)薄膜的物性具有准确、快速、对材料无损伤等突出优点.研究了Si(100)衬底上淀积低k薄膜的分层结构中，SAW沿任意方向传播的色散关系.引入坐标变换后，单层薄膜特征矩阵从9阶降到6阶，双层薄膜特征矩阵从15阶降到10阶，大幅度提高了计算速度，有利于生产ULSI过程中的在线监测. 关键词： 超大规模集成电路 声表面波 传输方向 频散特性     

MOCVD法生长SAWF用ZnO/Diamond/Si多层结构

使用等离子体辅助MOCVD系统在金刚石,硅衬底上成功地制备了氧化锌多层薄膜材料,通过两步生长法对薄膜质量进行了优化。XRD测试显示优化后的样品具有c轴的择优取向生长,PL谱测试表明样品经优化后不仅深能级发射峰消失,同时紫外发射峰增强。对优化后的样品的表面测试显示出较低的表面粗糙度。比较氧化锌多层薄膜结构的声表面波频散曲线,ZnO薄膜声表面滤波器受膜厚和衬底材料的影响较大。当ZnO薄膜较薄时,在它上面的传播速度将与衬底上的传播速度接近,与其他衬底上生长的薄膜相比,以金刚石这种快声速材料为衬底的ZnO多层薄膜结构,声表面波滤波器的中心频率将提高1倍左右。     

ZnO薄膜的制备和结构特性及应变

在SiO₂/Si衬底上面,利用射频磁控溅射方法,在不同的工艺条件下生长ZnO薄膜,然后进行热处理(600～1000℃退火).研究了氩氧比和退火温度对薄膜结晶性能的影响.薄膜的表面结构和晶体特性通过扫描电子显微镜(SEM)、X射线衍射(XRD)来进行表征.结果表明:所制备的薄膜为多晶纤锌矿结构,具有垂直于衬底的c轴(002)方向的择优取向性.热处理可使ZnO(002)衍射峰相对强度增强,半峰全宽(FWHM)变小,即退火使c轴生长的薄膜取向性增强.未经退火的ZnO薄膜存在张应力,经过热处理后应力发生改变,最后变成压应力,并且随着退火温度的升高,压应力逐渐增大.     

多晶金刚石对硅基氮化镓材料的影响

氮化镓(GaN)器件的自热问题是目前限制其性能的关键因素,在GaN材料上直接生长多晶金刚石改善器件的自热问题成为研究的热点,多晶金刚石距离GaN器件工作有源区近,散热效率高,但多晶金刚石和GaN材料热失配可能会导致GaN电特性衰退.本文采用微波等离子体化学气相沉积法,在2 in (1 in=2.54 cm)Si基GaN材料上生长多晶金刚石.测试结果显示,多晶金刚石整体均匀一致,生长金刚石厚度为9—81 μm,随着多晶金刚石厚度的增大, GaN (002)衍射峰半高宽增量和电性能衰退逐渐增大.通过激光切割和酸法腐蚀,将Si基GaN材料从多晶金刚石上完整地剥离下来.测试结果表明:金刚石高温生长过程中,氢原子对氮化硅外延层缺陷位置有刻蚀作用形成孔洞区域,刻蚀深度可达本征GaN层;在降温过程,孔洞周围形成裂纹区域.剥离下来的Si基GaN材料拉曼特征峰峰位, XRD的(002)衍射峰半高宽以及电性能均恢复到本征状态,说明多晶金刚石与Si基GaN热失配产生应力,引起GaN晶格畸变,导致GaN材料电特性衰退,这种变化具有可恢复性,而非破坏性.     

溶胶-凝胶法制备氧化锌薄膜的压电行为

"采用溶胶-凝胶技术在单晶硅Si(111)上制备了ZnO压电薄膜,并以扫描电镜、X射线衍射仪(XRD)和原子力显微镜(AFM)进行了表征．XRD衍射实验表明ZnO薄膜随着膜厚的增大,其(002)取向逐渐增强;AFM研究了薄膜的表面形貌、粗糙度与晶粒大小的结果表明,ZnO压电薄膜的粗糙度与晶粒寸随着薄膜厚度的增大而减小．粗糙度为2.188~0.914 nm．利用PFM研究压电系数,发现随着薄膜厚度的增加,(002)生长方向增强,压电系数逐渐增大;当力参数小于薄膜的表面粗糙度时,压电系数测量不准确且在较大幅度     

自持金刚石厚膜上沉积生长ZnO薄膜及发光特性

采用磁控溅射在自持CVD金刚石厚膜的成核面上制备了ZnO薄膜,并实验研究了其生长特性和发光特性随O2和Ar流量的变化。利用X射线衍射(XRD)、光致发光(PL)光谱、电子探针(EPMA)和霍尔测量对样品进行了检测。结果表明,在O2/Ar比值约为1时沉积得到的ZnO薄膜取向较一致,呈现高阻的状态并且发光性能最好。     

籽晶层对喷雾热分解法生长ZnO薄膜结晶质量和光电性能的影响

通过脉冲激光沉积(PLD)方法在Si(100)衬底上沉积一层高质量的ZnO籽晶层,在籽晶层上进一步采用超声喷雾热分解(USP)法生长ZnO薄膜,研究了籽晶层对ZnO薄膜结晶质量和ZnO/Si异质结光电特性的影响。研究结果表明,在籽晶层的诱导作用下,USP法生长ZnO薄膜由多取向结构变为(002)单一取向,结晶性能得到了显著改善;籽晶层上生长的薄膜呈现出垂直于衬底生长的柱状晶结构,微观结构更加致密。通过研究紫外光照前后ZnO/Si异质结的整流特性,发现引入籽晶层后,反向偏压下异质结的光电响应显著增加,并且在开路状态下出现明显的光伏效应。     

离子束增强沉积制备p型氧化锌薄膜及其机理研究

采用离子束增强沉积方法在Si和SiO₂/Si衬底上制备In-N共掺杂ZnO薄膜(INZO)，溅射靶是用ZnO和2 atm% In₂O₃粉体均匀混合并压制而成，在氩离子溅射ZnO靶的同时，氮、氩混合离子束垂直注入沉积的薄膜.实验结果显示INZO薄膜具有(002)的择优取向，并且为p型导电，电阻率最低为0.9Ωcm.薄膜在氮气、氧气气氛下退火，对薄膜的结构和电学特性与成膜和退火条件的关系进行了分析. 关键词： 氧化锌薄膜 p型掺杂 离子束增强沉积     

Characteristics of SAW UV sensors based on a ZnO/Si structure using third harmonic mode

This paper describes the characteristics of surface acoustic wave (SAW) ultraviolet (UV) sensors fabricated from a ZnO thin film using the third harmonic mode. A ZnO thin film was used as an active layer for UV detection, and a piezoelectric layer was sputtered using magnetron sputtering. The X-ray diffraction (XRD) and photoluminescence (PL) spectra showed that the ZnO sputtered onto Si(100) was highly (002)-oriented and had good optical properties. The two-port SAW resonator was based on an inter-digital transducer (IDT)/ZnO/Si structure and was fabricated and exposed under UV light at a wavelength of 380 nm. As a result, under a UV intensity of 3 mW/cm², the SAW UV sensor was greatly shifted by 400 kHz at the third harmonic mode compared to a frequency shift of 10 kHz in the fundamental mode.     

Development of two-port surface acoustic wave resonator with Al/Au electrodes for gas sensing

Simple and efficient surface acoustic wave(SAW)two-port resonators with low insertion loss and high Q-values on ST-X quartz substrate using a corrosion-proof A1/Au-stripe electrode structure are developed for gas sensing.It was composed of two shorted grating reflectors and adjacent intedigital transducers(IDT),and an active metal film in the cavity between the IDTs for the sensitive film coating.The devices are expected to provide good protection towards metal electrode for gas sensors application in chemically reactive environments.Excellent device performance as low insertion loss,high Q factor and single-mode are achieved by carefully selecting the metallic electrode thickness,cavity length and acoustic aperture.Prior to fabrication,the coupling of modes(COM)model was performed for device simulation to determine the optimal design parameters.The fabricated single-mode SAW resonator at operation frequency of 300 MHz range exhibits matched insertion loss of~6.5 dB and loaded Q factor in the 3000 range.Using the fabricated resonator as the feedback element,a dualresonator-oscillator with excellent frequency stability(0.1 ppm)was developed and evaluated experimentally,and it is significant for performance improvement of SAW gas sensor.     

基于SSCVD方法的a-b轴取向ZnO薄膜制备

以Zn₄(OH)₂(O₂CCH₃)₆·2H₂O为单一固相有机源,采用单源化学气相沉积法(Single sour cechem icalvapor deposition,SSCVD)在Si(100)衬底上制备ZnO薄膜,用X射线衍射(XRD)、原子力显微镜(AFM)分析ZnO薄膜样品的晶体结构和微观形貌,并用X射线光电子能谱(XPS)对薄膜的锌氧化学计量比进行了分析。研究结果表明:在非平衡条件下所得到的ZnO薄膜沿a-b轴取向生长,基片温度对ZnO薄膜生长过程影响较大,随着基片温度的升高,薄膜呈现c轴生长趋势;晶粒成柱状、尺寸均匀、膜层结构致密;薄膜样品中n_Zn:n_O=0.985。     

应用于气体传感器的具有铝/金电极的单模式两端对声表面波谐振器

为改善气体传感器性能,通过器件优化设计获得了一种应用于气体传感器的具有低损耗、高品质因子(Q)的单模式两端对声表面波(SAW)谐振器。该谐振器由两个换能器、分置于换能器两边的短路栅反射器以及在换能器之间分布的用于敏感膜镀膜的约2.5mm金属薄层构成。谐振器采用铝/金双层电极以降低测试气体环境的腐蚀影响。利用经典耦合模(COM)理论对器件性能进行了仿真以提取优化的结构设计参数。基于仿真结果,实验研制了基于300MHz频率的新型铝/金电极SAW两端对谐振器,测试结果显示所研制器件具有较低损耗(〈7dB),较高Q值(-3000)以及单一谐振模式的特点,并且,以所研制的新型谐振器为频率控制单元的谐振器型振荡器表现出良好的频率稳定度(t15Hz/h),这对于改善气体传感器的检测下限及稳定性等性能指标具有重要意义。      

Propagations of Rayleigh and Love waves in ZnO films/glass substrates analyzed by three-dimensional finite element method

Propagation characteristics of surface acoustic waves(SAWs) in ZnO films/glass substrates are theoretically investigated by the three-dimensional(3D) finite element method. At first, for(11ˉ20) ZnO films/glass substrates, the simulation results confirm that the Rayleigh waves along the [0001] direction and Love waves along the [1ˉ100] direction are successfully excited in the multilayered structures. Next, the crystal orientations of the ZnO films are rotated, and the influences of ZnO films with different crystal orientations on SAW characterizations, including the phase velocity, electromechanical coupling coefficient, and temperature coefficient of frequency, are investigated. The results show that at appropriate h/λ, Rayleigh wave has a maximum k~2 of 2.4% in(90°, 56.5°, 0°) ZnO film/glass substrate structure; Love wave has a maximum k~2 of 3.81% in(56°, 90°, 0°) ZnO film/glass substrate structure. Meantime, for Rayleigh wave and Love wave devices, zero temperature coefficient of frequency(TCF) can be achieved at appropriate ratio of film thickness to SAW wavelength. These results show that SAW devices with higher k~2 or lower TCF can be fabricated by flexibly selecting the crystal orientations of ZnO films on glass substrates.     

Simulation and design on SAW reflective delay line for wireless sensor application using coupling of modes

This paper presents an optimal design on surface acoustic wave reflective delay line using coupling of modes（COM）model.The reflection coefficient S₁₁of the SAW device is deduced to evaluate the device performance.Typical SAW reflective delay line consists of a piezoelectric substrate,an interdigital transducer（IDT）and several reflectors positioned along the acoustic propagation direction.The influences of the design parameters of the device, such as structure of the IDT,reflector types,etc.on device performance are investigated,and the optimal design parameters are determined.Based on these parameters,a 434 MHz SAW reflective delay line with single phase unidirectional transducers and three shorted grating reflectors is fabricated on 41°YX LiNbO₃.The measured S₁₁agrees well with the simulated one.Sharp reflection peaks,high signal noise ratio（S/N）,and low spurious noise between the reflection peaks are observed.     

Fabrication and characteristics of a surface acoustic wave UV sensor based on ZnO thin films grown on a polycrystalline 3C-SiC buffer layer

Zinc oxide (ZnO) thin films were deposited onto a polycrystalline (poly) 3C-SiC buffer layer for surface acoustic wave (SAW) ultraviolet (UV) sensing using a magnetron sputtering system. X-ray diffraction (XRD) and photoluminescence (PL) spectra showed that the ZnO film grown on 3C-SiC/Si had a dominant c-axis orientation, a lower residual stress, and higher intensity of luminescence at 380 nm of ZnO thin film. The SAW resonator UV detector were fabricated on ZnO/Si structures with a 3C-SiC buffer layer. The SAW resonator exposed under UV illumination had a linear response with sensitivity of 85 Hz/(μW/cm²) in ZnO/3C-SiC/Si structures, as compared to 25 Hz/(μW/cm²) in ZnO/Si structures with UV intensity varied until 600 μW/cm².     

基于绝缘体上硅的一种改进的Mach-Zehnder声光调制器

传统的基于绝缘体上硅的Mach-Zehnder(MZ)声光调制器中,叉指换能器位于两臂的同一侧.为实现高的调制效率,声表面波的波峰和波谷分别调制MZ干涉仪的两臂,这要求控制MZ干涉仪两臂之间的距离为奇数倍声波半波长.但实际上由于传播过程中衬底材料的变化,声波波长会变大,这会导致两臂的间距难以准确设置.另一方面,声波在传播过程中经过MZ干涉仪的一臂后会发生衰减,降低了对另一臂的调制效果,影响了整体的调制效率.本文针对这些问题给出了一种解决方案,把叉指换能器放在MZ波导两臂之间,确保MZ干涉仪两臂到叉指电极中心距离相等.采用有限元法,首先对新提出的结构进行分析,然后通过声光互作用原理得到了材料的折射率变化;进而研究了波导类型、波导宽度、氧化锌厚度及叉指对数等因素对声光调制效率的影响,并对声光调制器的结构参数进行了优化以提高其性能.基于COMSOL Multiphysics的仿真结果表明,当条波导宽度为6μm,氧化锌只覆盖有叉指电极的部分且厚度为2.2μm,控制叉指电极数目为50对时,波导有效折射率变化在驱动电压为1 V时可以达到4.08×10~(-4),比传统结构提高了12%.