Study of nanocrystalline V02 thin films prepared by magnetron sputtering and post-oxidation

Nanocrystalline VO2 thin films were deposited onto glass slides by direct current magnetron sputtering and postoxidation. These films undergo semiconductor-metal transition at 70 ℃, accompanied by a resistance drop of two magnitude orders. The crystal structures and surface morphologies of the VO2 films were characterized by x-ray diffraction （XRD） and atomic force microscope （AFM）, respectively. Results reveal that the average grain size of VO2 nanograins measured by XRD is smaller than those measured by AFM. In addition, Raman characterization indicates that stoichiometric VO2 and oxygen-rich VO2 phases coexist in the films, which is supported by x-ray photoelectron spectroscopy （XPS） results. Finally, the optical properties of the VO2 films in UV-visible range were also evaluated. The optical band gap corresponding to 2p-3d inter-band transition was deduced according to the transmission and reflection spectra. And the deduced value, Eopt2p-3d ： 1.81 eV, is in good agreement with that previously obtained by theoretical calculation.     

Two crucial factors influencing quality of GaAs on Ge substrate

High-quality GaAs films with fine surfaces and GaAs/Ge interfaces on Ge have been achieved via molecular beam epitaxy. The influence of low temperature annealing and low temperature epitaxy on the quality of the film when GaAs is grown on a （100） 6 ° offcut towards [111] Ge substrate are investigated by analyzing and comparing the GaAs films that are fabricated via three different processes. A low temperature annealing process after high temperature annealing and a low temperature epitaxy process after the initial GaAs growth play a vital role in improving the quality of GaAs film on a Ge substrate.     

Impact of substrate injected hot electrons on hot carrier degradation in a 180-nm NMOSFET

Although hot carriers induced degradation of NMOSFETs has been studied for decades, the role of hot electron in this process is still debated. In this paper, the additional substrate hot electrons have been intentionally injected into the oxide layer to analyze tile role of hot electron in hot carrier degradation. The enhanced degradation and the decreased time exponent appear with the injected hot electrons increasing, the degradation increases from 21.80% to 62.00% and the time exponent decreases from 0.59 to 0.27 with Vb decreasing from 0 V to -4 V, at the same time, the recovery also becomes remarkable and which strongly depends on the post stress gate bias Vg. Based on the experimental results, more unrecovered interface traps are created by the additional injected hot electron from the breaking Si-H bond, but the oxide trapped negative charges do not increase after a rapid recovery.     

Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multinle auantum wells at room temnerature

Tensile-strained Ge/SiGe multiple quantum wells （MQWs） were grown on a Ge-on-Si virtual substrate using ultrahigh vacuum chemical vapor deposition on an n＋-Si （001） substrate. Direct-bandgap electroluminescence from the MQWs light emitting diode was observed at room temperature. The quantum confinement effect of the direct-bandgap transitions is in good agreement with the theoretical calculated results. The redshift mechanism of emission wavelength related to the thermal effect is discussed,     

Fabricating GeO2 passivation layer by N20 plasma oxidation for Ge NMOSFETs application

In this paper, oxidation of Ge surface by N2O plasma is presented and experimentally demonstrated. Results show that 1.0-nm GeO2 is achieved after 120-s N20 plasma oxidation at 300 ℃. The GeO2/Ge interface is atomically smooth. The interface state density of Ge surface after N20 plasma passivation is about - 3 × 1011 cm-2.eV-1. With GeO2 passivation, the hysteresis of metal-oxide-semiconductor （MOS） capacitor with A1203 serving as gate dielectric is reduced to - 50 mV, compared with - 130 mV of the untreated one. The Fermi-level at GeO2/Ge interface is unpinned, and the surface potential is effectively modulated by the gate voltage.     

Analysis of tensile strain enhancement in Ge nano-belts on an insulator surrounded by dielectrics

Ge nano-belts with large tensile strain are considered as one of the promising materials for high carrier mobility metal- oxide-semiconductor transistors and efficient photonic devices. In this paper, we design the Ge nano-belts on an insulator surrounded by Si3N4 or SiO？ for improving their tensile strain and simulate the strain profiles by using the finite difference time domain （FDTD） method. The width and thickness parameters of Ge nano-belts on an insulator, which have great effects on the strain profile, are optimized. A large uniaxial tensile strain of 1.16% in 50-nm width and 12-nm thickness Ge nano-belts with the sidewalls protected by Si3N4 is achieved after thermal treatments, which would significantly tailor the band gap structures of Ge-nanobelts to realize the high performance devices.     

Effect of ultrathin GeO_x interfacial layer formed by thermal oxidation on Al_2O_3 capped Ge

We propose a modified thermal oxidation method in which an Al2O3 capping layer is used as an oxygen blocking layer （OBL） to form an ultrathin GeOx interracial layer, and obtain a superior Al2O3/GeOx/Ge gate stack. The GeOx interfacial layer is formed in oxidation reaction by oxygen passing through the Al2O3 OBL, in which theAl2O3 layer could restrain the oxygen diffusion and suppress the GeO desorption during thermal treatment. The thickness of the GeOx interfacial layer would dramatically decrease as the thickness of Al2O3 OBL increases, which is beneficial to achieving an ultrathin GeOx interfacial layer to satisfy the demand for small equivalent oxide thickness （EOT）. In addition, the thickness of the GeOx interfacial layer has little influence on the passivation effect of the Al2O3/Ge interface. Ge （100） p-channel metal- oxide-semiconductor field-effect transistors （pMOSFETs） using the Al2O3/GeOx/Ge gate stacks exhibit excellent electrical characteristics; that is, a drain current on-off （Ionloft） ratio of above 1 104, a subthreshold slope of - 120 mV/dec, and a peak hole mobility of 265 cm2/V.s are achieved.     

Experimental clarification of orientation dependence of germanium PMOSFETs with AlzO3/GeOx/Ge gate stack

An extensive and complete experimental investigation with a full layout design of the channel direction was carried out for the first time to clarify the orientation dependence of germanium p-channel metal-oxide-semiconductor field-effect transistors （PMOSFETs）. By comparison of gate trans-conductance, drive current, and hole mobility, we found that the performance trend with the substrate orientation for Ge PMOSFET is （110）〉（111） ~ （100）, and the best channel direction is （110）/[110]. Moreover, the （110） device performance was found to be easily degraded as the channel direction got off from the [ 110] orientation, while （100） and （111） devices exhibited less channel orientation dependence. This experimental result shows good matching with the simulation reports to give a credible and significant guidance for Ge PMOSFET design.     

Magnetic resonance in Ge0.99Mn0.01 nanowires

The contributions of several different subsystems to the magnetic properties of Ge_0.99Mn_0.01 nanowires are distinguished. The ferromagnetic resonance spectrum is found to have four components, two of which have the same temperature dependence and a Lorentzian shape. Presumably, these components correspond to the excitation of spin waves in the Mn³⁺ ion subsystem under the simultaneous influence of exchange and dipole-dipole interactions. There is also another Lorentzian-shaped component corresponding to resonance in the subsystem of localized Mn²⁺ centers. The fourth spectrum component has an asymmetric Dyson shape and is related to the resonance of mobile paramagnetic centers. A correlation is found between the temperature dependences of the spectral parameters of the magnetic resonances of the localized centers (Mn³⁺ and Mn²⁺ ions) and the charge carrier subsystem. This correlation indicates that the ferromagnetic exchange between the localized centers is due to carrier spin transport.     

Theoretical study on K, L, and M X-ray transition energies and rates of neptunium and its ions

The transition energies and electric dipole （El） transition rates of the K, L, and M lines in neutral Np have been theoretically determined from the MultiConfiguration Dirac-Fock （MCDF） method. In the calculations, the contributions from Breit interaction and quantum electrodynamics （QED） effects （vacuum polarization and self-energy）, as well as nu- clear finite mass and volume effects, are taken into account. The calculated transition energies and rates are found to be in good agreement with other experimental and theoretical results. The accuracy of the results is estimated and discussed. Furthermore, we calculated the transition energies of the same lines radiating from the decaying transitions of the K-, L-, and M-shell hole states of Np ions with the charge states Np1＋ to Np6＋ for the first time. We found that for a specific line, the corresponding transition energies relating to all the Np ions are almost the same; it means the outermost electrons have a very small influence on the inner-shell transition processes.     

Supersymmetry and Solution of Dirac Equation with Vector and Scalar Potentials

The Dirac equations with vector and scalar potentials of the Coulomb types in two and three dimensions are solved using the supersymmetric quantum mechanics method. For the system of such potentials, the analytical expressions of the matrix dements for both position and momentum operators are obtained.     

Design and construction progress of BRIF

A new RIB project, the Beijing Radioactive Ion-beam Facility （BRIF）, has been running at CIAE since 2004. In this project, a 100 MeV H-cyclotron, CYCIAE-100, is selected as the driving accelerator providing a 75-100 MeV, 200-500 μA proton beam. An ISOL system employs two stage separators to reach the mass resolution of 20000. Its RIB beam will be injected into the existing Tandem and a superconducting booster installed down stream of the Tandem will increase the energy by 2 MeV/q. The progress of BRIF, giving special emphasis to CYCIAE-100, will be introduced in this paper.     

Charmonium spectroscopy and decay at CLEO-c

We report recent results on charmonium spectroscopy and decay from the CLEO-c experiment at the Cornell electrompositron storage ring accelerator, CESR. Most of the results are based on the analysis of 54 pb-1 of luminosity collected at the ψ（2S） resonance, corresponding to 27 M ψ（2S） decays. We concentrate on radiative decays of ψ（2S） and J/ψ, on two-body mesonic decay of XcJ, on hadronic decay of the he, and on higher multipoles in the two-photon cascade ψ（2S）→γχcJ, XcJ→γJ/ψ.     

Investigations of the half-metallic behavior and the magnetic and thermodynamic properties of half-Heusler CoMnTe and RuMnTe compounds: A first-principles study

First-principles spin-polarized density functional theory （DFT） investigations of the structural, electronic, magnetic, and thermodynamics characteristics of the half-Heusler, CoMnTe and RuMnTe compounds are carried out. Calculations are accomplished within a state of the art full-potential （FP） linearized （L） augmented plane wave plus a local orbital （APW ＋ lo） computational approach framed within DFT. The generalized gradient approximation （GGA） parameterized by Perdew, Burke, and Ernzerhof （PBE） is implemented as an exchange correlation functional as a part of the total energy calculation. From the analysis of the calculated electronic band structure as well as the density of states for both compounds, a strong hybridization between d states of the higher valent transition metal （TM） atoms （Co, Ru） and lower valent TM atoms of （Mn） is observed. Furthermore, total and partial density of states （PDOS） of the ground state and the results of spin magnetic moments reveal that these compounds are both stable and ideal half-metallic ferromagnetic. The effects of the unit cell volume on the magnetic properties and half-metaliicity are crucial. It is worth noting that our computed results of the total spin magnetic moments, for CoMnTe equal to 4 ~tB and 3 p-B per unit cell for RuMnTe, nicely follow the rule μ2tot = Zt - 18. Using the quasi-harmonic Debye model, which considers the phononic effects, the effecs of pressure P and temperature T on the lattice parameter, bulk modulus, thermal expansion coefficient, Debye temperature, and heat capacity for these compounds are investigated for the first time.     

Status and accuracy of the Monte Carlo generators for luminosity measurements

The status and accuracy of the precision Monte Carlo generators used for luminosity measurements at flavour factories is reviewed. It is shown that, thanks to a considerable, long-term effort in tuned comparisons between the predictions of independent programs, as well as in the validation of the generators against the presently available calculations of the next-to-next-to-leading order QED corrections to Bhabha scattering, the theoretical accuracy reached by the most precise tools is of about one per mille. This error estimate is valid for realistic experimental cuts, appears to be quite robust and is already sufficient for very accurate luminosity measurements. However, recent progress and possible advances to further improve it are also discussed.     

Influences of anionic and cationic dopants on the morphology and optical properties of PbS nanostructures

Selenium and zinc are used as anionic and cationic dopant elements to dope PbS nanostructures. The undoped and doped PbS nanostructures are grown using a thermal evaporation method. Scanning electron microscopy （SEM） results show similar morphologies for the undoped and doped PbS nanostructures. X-ray diffraction （XRD） patterns of three sets of the nanostructures indicate that these nanostructures each have a PbS structure with a cubic phase. Evidence of dopant incorporation is demonstrated by X-ray photoelectron spectroscopy （XPS）. Raman spectra of the synthesized samples con- firm the XRD results and indicate five Raman active modes, which relate to the PbS cubic phase for all the nanostructures. Room temperature photoluminescence （PL） and UV-Vis spectrometers are used to study optical properties of the undoped and doped PbS nanostructures. Optical characterization shows that emission and absorption peaks are in the infrared （IR） region of the electromagnetic spectrum for all PbS nanostructures. In addition, the optical studies of the doped PbS nanos- tructures reveal that the band gap of the Se-doped PbS is smaller, and the band gap of the Zn-doped PbS is bigger than the band gap of the undoped PbS nanostructures.     

On Camassa-Holm Equation with Self-Consistent Sources and Its Solutions

Regarded as the integrable generalization of Camassa-Holm （CH） equation, the CH equation with self-consistent sources （CHESCS） is derived. The Lax representation of the CHESCS is presented. The conservation laws for CHESCS are constructed. The peakon solution, N-soliton, N-cuspon, N-positon, and N-negaton solutions of CHESCS are obtained by using Darboux transformation and the method of variation of constants.     

Remarks on interpretations of the Eotvos experiment and misinterpretation of E=mc^2

The Eotvos experiment on the verification of equivalence between inertial mass and gravitational mass of a body is famous for its accuracy. A question is, however, can these experimental results be applied to the case of a physical space in general relativity, where the space coordinates could be arbitrary？ It is pointed out that it can be validly applied because it has been proven that Einstein＇s equivalence principle for a physical space must have a frame of reference with the Euclidean-like structure. Will claimed further that such an overall accuracy can be translated into an accuracy of the equivalence between inertial mass and each type of energy. It is shown that, according to general relativity, such a claim is incorrect. The root of this problem is due to an inadequate understanding of special relativity that produced the famous equation E=mc^2, which must be understood in terms of energy conservation. Concurrently, it is pointed out that this error is a problem in Will＇s book, ‘Theory and Experiment in Gravitational Physics＇.     

Design and construction of the first prototype ionization chamber for CSNS and PA beam loss monitor （BLM） system

Design and construction of the first prototype ionization chamber for CSNS and Proton Accelerator （PA） beam loss monitor （BLM） system is reported. The low leakage current （〈0.1 pA）, good plateau （≈800 V） and linearity range up to 200 Roentgen/h are obtained in the first prototype. All of these give us good experience for further improving the ionization chamber construction.     

Measurement of the response function and the detection effciency of an organic liquid scintillator for neutrons between 1 and 30 MeV

The light output function of a φ50.8 mm×50.8 mm BC501A scintillation detector was measured in the neutron energy region of 1 to 30 MeV by fitting the pulse height （PH） spectra for neutrons with the simulations from the NRESP code at the edge range. Using the new light output function, the neutron detection effciency was determined with two Monte-Carlo codes, NEFF and SCINFUL. The calculated effciency was corrected by comparing the simulated PH spectra with the measured ones. The determined effciency was verified at the near threshold region and normalized with a Proton-Recoil-Telescope （PRT） at the 8-14 MeV energy region.