Two crucial factors influencing quality of GaAs on Ge substrate

High-quality GaAs films with fine surfaces and GaAs/Ge interfaces on Ge have been achieved via molecular beam epitaxy. The influence of low temperature annealing and low temperature epitaxy on the quality of the film when GaAs is grown on a （100） 6 ° offcut towards [111] Ge substrate are investigated by analyzing and comparing the GaAs films that are fabricated via three different processes. A low temperature annealing process after high temperature annealing and a low temperature epitaxy process after the initial GaAs growth play a vital role in improving the quality of GaAs film on a Ge substrate.     

胶原蛋白分子中电场激发的孤子特性

根据胶原蛋白分子的结构特点，建立了新的胶原蛋白分子模型，得到了更能体现胶原蛋白分 子三维结构的系统哈密顿量，并采用4阶Runge-Kutta算法，对得到的电场作用下胶原蛋白分 子中激发态能量传递的动力学方程进行了数值求解.结果表明电场脉冲可以在胶原蛋白分子 中激发起酰胺键(amide-Ⅰ)振子的孤波，且在孤子产生的同时伴随有声子发射. 关键词： 胶原蛋白 孤子 电场