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Experimental clarification of orientation dependence of germanium PMOSFETs with AlzO3/GeOx/Ge gate stack
Authors:Yun Quan-Xin  Li Ming  An Xia  Lin Meng  Liu Peng-Qiang  Li Zhi-Qiang  Zhang Bing-Xin  Xia Yu-Xuan  Zhang Hao  Zhang Xing  Huang Ru  and Wang Yang-Yuan
Affiliation:Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing 100871, China
Abstract:germanium, metal-oxide-semiconductor field-effect transistor, orientation
Keywords:germanium  metal-oxide-semiconductor field-effect transistor  orientation
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