Study of a magnetic alloy-loaded RF cavity for bunch compression at the CSR

The Heavy Ion Research Facility and Cooling Storage Ring（HIRFL-CSR）accelerator in Lanzhou offers a unique possibility for the generation of high density and short pulse heavy ion beams by non-adiabatic bunch compression longitudinally,which is implemented by a fast jump of the RF-voltage amplitude.For this purpose,an RF cavity with high electric field gradient loaded with Magnetic Alloy cores has been developed.The results show that the resonant frequency range of the single-gap RF cavity is from 1.13 MHz to 1.42 MHz,and a maximum RF voltage of 40 kV with a total length of 100 cm can be obtained,which can be used to compress heavy ion beams of 238U72＋ with 250 MeV/u from the initial bunch length of 200 ns to 50 ns with the coaction of the two single-gap RF cavity mentioned above.     

Mode control in a high gain relativistic klystron amplifier with 3 GW output power

Higher mode excitation is very serious in the relativistic klystron amplifier, especially for the high gain relativistic amplifier working at tens of kilo-amperes. The mechanism of higher mode excitation is explored in the FIC simulation and it is shown that insufficient separation of adjacent cavities is the main cause of higher mode excitation. So RF lossy material mounted on the drift tube wall is adopted to suppress higher mode excitation. A high gain S-band relativistic klystron amplifier is designed for the beam current of 13 kA and the voltage of 1 MV. PIC simulation shows that the output power is 3.2 GW when the input power is only 2.8 kW.     

A novel 4H-SiC lateral bipolar junction transistor structure with high voltage and high current gain

In this paper, a novel structure of a 4H-SiC lateral bipolar junction transistor (LBJT) with a base field plate and double RESURF in the drift region is presented. Collector-base junction depletion extension in the base region is restricted by the base field plate. Thin base as well as low base doping of the LBJT therefore can be achieved under the condition of avalanche breakdown. Simulation results show that thin base of 0.32 μm and base doping of 3×1017 cm-3 are obtained, and corresponding current gain is as high as 247 with avalanche breakdown voltage of 3309 V when the drift region length is 30 μm. Besides, an investigation of a 4H-SiC vertical BJT (VBJT) with comparable breakdown voltage (3357 V) shows that the minimum base width of 0.25 μm and base doping as high as 8×1017 cm-3 contribute to a maximum current gain of only 128.     

Highly sensitive fiber refractive index sensor based on side-core holey structure

We propose a side-core holey fiber （SCHF）-based surface plasmon resonance （SPR） sensor to achieve high refractive index （RI） sensitivity. The SCHF structure can facilitate analyte filling and enhance the overlapping area of the core mode and surface plasmon polariton （SPP） mode. The coupling properties of the sensor are analyzed by numerical simulation. The maximum sensitivity of 5000 nm/RIU in an RI range of 1.33-1.44, and the average sensitivity of 9295 nm/RIU in an RI range from 1.44 to 1.54 can be obtained.     

Synthesis of large diamond crystals containing high-nitrogen concentration at high pressure and high temperature using Ni-based solvent by temperature gradient method

This paper reprots that with Ni-based catalyst/solvent and with a dopant of NaN 3,large green single crystal diamonds with perfect shape are successfully synthesized by temperature gradient method under high pressure and high temperature in a China-type cubic anvil high-pressure apparatus (SPD-6×1200),and the highest nitrogen concentration reaches approximately 1214-1257 ppm calculated by infrared absorption spectra.The synthesis conditions are about 5.5 GPa and 1240-1300 C.The growth behaviour of diamond with high-nitrogen concentration is investigated in detail.The results show that,with increasing the content of NaN 3 added in synthesis system,the width of synthesis temperature region for growth high-quality diamonds becomes narrower,and the morphology of diamond crystal is changed from cube-octahedral to octahedral at same temperature and pressure,the crystal growth rate is slowed down,nevertheless,the nitrogen concentration doped in synthetic diamond increases.     

High frequency behaviours and Mossbauer study of field annealed FeCuNbSiB alloy ribbons

This paper investigates the high frequency behaviours and magnetic anisotropy of rapidly solidified FINEMET （Fe73.5Si13.sBgNb3Cul） alloy ribbons annealed in an applied magnetic field. It finds that the ribbons annealed with the applied magnetic field show much higher resonance frequencies and have even higher permeability at higher frequencies than the samples annealed without the magnetic field and the non-annealed ribbons. MSssbauer spectroscopy had been employed to study the spatial distribution of the magnetic moments of five selected FINEMET alloy ribbons in different heat-treated conditions. The results show that an easy plane has been established after annealling in the magnetic field, while for the other ribbons this effect is not significant. Hence, the relationship between magnetic field annealing and high frequency property has been bridged by the bianisotropic theory.     

Fiber optical parametric oscillator based on photonic crystal fiber pumped with all-normal-dispersion mode-locked Yb:fiber laser

We demonstrate a cost effective, linearly tunable fiber optical parametric oscillator based on a home-made photonic crystal fiber pumped with a mode-locked ytterbium-doped fiber laser, providing linely tuning ranges from 1018 nm to 1038 nm for the idler wavelength and from 1097 nm to 1117 nm for the signal wavelength by tuning the pump wavelength and the cavity length. In order to obtain the desired fiber with a zero dispersion wavelength around 1060 rim, eight sam- ples of photonic crystal fibers with gradually changed structural parameters are fabricated for the reason that it is difficult to accurately customize the structural dimensions during fabrication. We verify the usability of the fabricated fiber experimen- tally via optical parametric generation and conclude a successful procedure of design, fabirication, and verification. A seed source of home-made all-normal-dispersion mode-locked ytterbium-doped fiber laser with 38.57 ps pulsewidth around the 1064 nm wavelength is used to pump the fiber optical parametric oscillator. The wide picosecond pulse pump laser enables a larger walk-off tolerance between the pump light and the oscillating light as well as a longer photonic crystal fiber of 20 m superior to the femtosecond pulse lasers, resulting in a larger parametric amplification and a lower threshold pump power of 15.8 dBm of the fiber optical parametric oscillator.     

Thermal analysis for the high duty cycle PIMS accelerator

To develop the high power proton linear accelerator for the Accelerator Driven System（ADS） program,the preliminary design of the Pi mode accelerating structure（PIMS） has been carried out.It is estimated that PIMS would heat up to 80 for low duty cycle（0.1%） without water-cooling,which is not acceptable thus water-cooling is demanded.The structure stability for the high duty cycle or even for CW operation is crucially important for the ADS application.Therefore,thermal analysis with water-cooling for a high duty accelerator in our ADS research is performed to control the frequency shift caused by a temperature rise.     

A prototype of a high rating MRPC

Six-gap resistive plate chamber （MRPC） prototypes with semiconductive glass electrodes （bulk resistivity ～ 10^10Ω·cm） were studied for suitability in time-of-flight （TOF） applications at high rates. These studies were performed using a continuous electron beam of 800 MeV at IHEP and an X-ray machine. Time resolutions of about 100 ps and efficiencies larger than 90% were obtained for flux densities up to 28 kHz/cm^2.     

Non-recessed-gate quasi-E-mode double heterojunction AIGaN/GaN high electron mobility transistor with high breakdown voltage

A non-recessed-gate quasi-E-mode double heterojunction A1GaN/GaN high electron mobility transistor （quasi-E- DHEMT） with a thin barrier, high breakdown voltage and good performance of drain induced barrier lowering （DIBL） was presented. Due to the metal organic chemical vapor deposition （MOCVD） grown 9-nm undoped A1GaN barrier, the effect that the gate metal depleted the two-dimensiomal electron gas （2DEG） was greatly impressed. Therefore, the density of carriers in the channel was nearly zero. Hence, the threshold voltage was above 0 V. Quasi-E-DHEMT with 4.1%tm source-to-drain distance, 2.6-μm gate-to-drain distance, and 0.5-μm gate length showed a drain current of 260 mA/mm. The threshold voltage of this device was 0.165 V when the drain voltage was 10 V and the DIBL was 5.26 mV/V. The quasi-E-DHEMT drain leakage current at a drain voltage of 146 V and a gate voltage of -6 V was below 1 mA/mm. This indicated that the hard breakdown voltage was more than 146 V.     

High conversion efficiency,high power density Q-switched fiber laser

An acoustic-optic Q-switched all-fiber laser With a high-repetition-rate, a short pulse width, a wide spectrum, and a high conversion efficiency is experimentally demonstrated. In the laser configuration, a （1＋1）x 1 side-pumping coupler is introduced to perform backward pumping, and a 10/130%tm Yb fiber is adopted. The acoustic-optic component operates in the first direction, achieving a Q-switched pulse with a repetition rate adjustable in the range of 20 kHz-80 kHz. Under a repetition rate of 20 kHz and a pump power of 6.76 W, the fiber laser obtains a highly efficient and stable pulse output, with an average power of 4.3 W, a pulse width of 56 ns, a peak power of 3.83 kW, and a power density of 1.39x 101~ W/cm2. Particularly, the optic-optic conversion efficiency of the laser reaches as high as 64%. Another feature of the pulsed laser is that the high reflection mirror reflects the pump light as well, which brings the secondary absorption of the pump power into the gain fiber.     

First-Principles Study of Structural,Elastic and Electronic Properties of OsSi

First-principles study of structural, elastic, and electronic properties of the B20 structure OsSi has been reported using the plane-wave pseudopotential density functional theory method. The calculated equilibrium lattice and elastic constants are in good agreement with the experimented data and other theoretical results. The dependence of the elastic constants, the aggregate elastic modulus, the deviation from the Cauchy relation, the elastic wave velocities in different directions and the elastic anisotropy on pressure have been obtained and discussed. This could be the first quantitative theoretical prediction of the elastic properties under high pressure of OsSi compound. Moreover, the electronic structure calculations show that OsSi is a degenerate semiconductor with the gap value of 0.68 eV, which is higher than the experimental value of 0.26 eV. The analysis of the PDOS reveals that hybridization between Os d and Sip states indicates a certain covalency of the Os-Si bonds.     

Development of a ferroelectric cathode diode

As a promising kind of high current cold cathode, the Ferroelectric Cathode （FEC） has several significant advantages, such as a controllable trigger time, lower vacuum requirement and large emitting area fabricability. The emitting current density of the FEC fabricated at Tsinghua University was more than 200 A/cm^2. In order to make the ferroelectric cathode into practical applications, a high current density diode using a ferroelectric cathode was designed, based on the PIC simulation. The performance of the FEC diode was investigated experimentally. When the applied diode voltage was 60 kV, a current density of more than 250 A/cm^2 was obtained, and the current density distribution was also measured.     

The laser-intensity dependence of the photoassociation spectrum of the ultracold Cs2（6S1/2 ＋ 6P1/2） 0＋ long-range molecular state

The high-resolution photoassociation spectrum of the ultracold cesium molecular 0＋ state below the 6S1/2 ＋ 6PI/2 limit is presented in this paper. The saturation of the photoassociation scattering probability is observed from the depen dence of the trap-loss probability on the photoassociation laser intensity. The corresponding resonant line width is also demonstrated to increase linearly with increasing photoassociation laser intensity. Our experimental data have good con sistency with the theoretical saturation model of Bohn and Julienne [Bohn J L and Julienne P S 1999 Phys. Rev. A 60 1].     

Epitaxial growth of Ge1-xSnx films with x up to 0.14 grown on Ge （001） at low temperature

We characterize the structures of Ge1-xSnx films with x up to 0.14 grown on Ge （001） by molecular-beam epitaxy at low temperature. The results show that Ge1-xSnx films are fully strained even at high Sn composition. The in-plane lattice parameters remain exactly the same as that of the substrate. Depth sensitivity analysis of the lattice parameters indicates that the strains of the epitaxial films are all in homogeneity. The films are fully strained. Poisson ratios, the force constants for the bonds between Ge and Sn are estimated and discussed in the present paper. Raman results show Ge-Ge, Ge-Sn, Sn-Sn vibrational modes. The Sn-Sn bond aggregation may respond to the high quality of our films. The fully strained epitaxy films with high content of Sn may be useful in designing the high quality GeSn films.     

Highly sensitive digital optical sensor with large measurement range based on the dual-microring resonator with waveguide-coupled feedback

We propose a novel high-performance digital optical sensor based on the Mach-Zehnder interferential effect and the dual-microring resonators with the waveguide-coupled feedback. The simulation results show that the sensitivity of the sensor can be orders of magnitude higher than that of aconventional sensor, and high quality factor is not critical in it. Moreover, by optimizing the length of the feedback waveguide to be equal to the perimeter of the ring, the measurement range of the proposed sensor is twice as much as that of the conventional sensor in the weak coupling case.     

Influence of a two-dimensional electron gas on current—voltage characteristics of Al0.3{Ga}0.7 N/GaN high electron mobility transistors

The J-V characteristics of AltGa1 tN/GaN high electron mobility transistors（HEMTs） are investigated and simulated using the self-consistent solution of the Schro dinger and Poisson equations for a two-dimensional electron gas（2DEG） in a triangular potential well with the Al mole fraction t = 0.3 as an example.Using a simple analytical model,the electronic drift velocity in a 2DEG channel is obtained.It is found that the current density through the 2DEG channel is on the order of 10^13 A/m^2 within a very narrow region（about 5 nm）.For a current density of 7 × 10^13 A/m62 passing through the 2DEG channel with a 2DEG density of above 1.2 × 10^17 m^-2 under a drain voltage Vds = 1.5 V at room temperature,the barrier thickness Lb should be more than 10 nm and the gate bias must be higher than 2 V.     

A new compact structure for a high intensity low-energy heavy-ion accelerator

A new compact accelerating structure named Hybrid RFQ is proposed to accelerate a high-intensity low-energy heavy ion beam in HISCL （High Intensive heavy ion SuperConducting Linear accelerator）, which is an injector of HIAF （Heavy Ion Advanced Research Facility）. It is combined by an alternative series of acceleration gaps and RFQ sections. The proposed structure has a high accelerating ability compared with a conventional RFQ and is more compact than traditional DTLs. A Hybrid RFQ is designed to accelerate 238U34＋ from 0.38 MeV/u to 1.33 MeV/u. The operation frequency is described to be 81.25 MHz at CW （continuous wave） mode. The design beam current is 1.0 mA. The results of beam dynamics and RF simulation of the Hybrid RFQ show that the structure has a good performance at the energy range for ion acceleration. The emittance growth is less than 5% in both directions and the RF power is less than 150 kW. In this paper, the results of beam dynamics and RF simulation of the Hybrid RFQ are presented.     

High-power terahertz pulse sensor with overmoded structure

Based on the hot electron effect in a semiconductor, an overmoded resistive sensor for 0.3-0.4 THz band is investi-gated. The distribution of electromagnetic field components, voltage standing wave ratio （VSWR）, and the average electric field in the silicon block are obtained by using the three-dimensional finite-difference time-domain （FDTD） method. By adjusting several factors （such as the length, width, height and specific resistance of the silicon block） a novel sensor with optimal structural parameters that can be used as a power measurement device for high power terahertz pulse directly is proposed. The results show that the sensor has a relative sensitivity of about 0.24 kW 1, with a fluctuation of relative sensitivity of no more than ±22%, and the maximum of VSWR is 2.74 for 0.3-0.4 THz band.     

Design of a high-efficiency C-band backward wave oscillator

For practicability of the high power microwave source,a C-band backward wave oscillator（BWO） which has high conversion efficiency is designed.When the axial guiding magnetic field is 0.83 T,the electron energy and the beam current of the diode are respectively 80 keV and 2.1 kA,a microwave output power of 100 MW at 7.4 GHz microwave frequency with 65% conversion efficiency is achieved in simulation.