| Influence of a two-dimensional electron gas on current—voltage characteristics of Al0.3{Ga}0.7 N/GaN high electron mobility transistors |
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| 引用本文： | 冀东,刘冰,吕燕伍,邹杪,范博龄.Influence of a two-dimensional electron gas on current—voltage characteristics of Al0.3{Ga}0.7 N/GaN high electron mobility transistors[J].中国物理 B,2012,21(6):67201-067201. |
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| 作者姓名： | 冀东 刘冰 吕燕伍 邹杪 范博龄 |
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| 作者单位： | School of Science,Beijing Jiaotong University;School of Electronic and Information Engineering,Beijing Jiaotong University |
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| 基金项目： | Project supported by the National Natural Science Foundation of China （Grant No. 60976070） and the Excellent Science and Technology Innovation Program from Beijing Jiaotong University, China. |
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| 摘 要： | The J-V characteristics of AltGa1 tN/GaN high electron mobility transistors（HEMTs） are investigated and simulated using the self-consistent solution of the Schro dinger and Poisson equations for a two-dimensional electron gas（2DEG） in a triangular potential well with the Al mole fraction t = 0.3 as an example.Using a simple analytical model,the electronic drift velocity in a 2DEG channel is obtained.It is found that the current density through the 2DEG channel is on the order of 10^13 A/m^2 within a very narrow region（about 5 nm）.For a current density of 7 × 10^13 A/m62 passing through the 2DEG channel with a 2DEG density of above 1.2 × 10^17 m^-2 under a drain voltage Vds = 1.5 V at room temperature,the barrier thickness Lb should be more than 10 nm and the gate bias must be higher than 2 V.
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| 关 键 词： | 高电子迁移率晶体管 二维电子气 电流密度 电压特性 GaN 2DEG 泊松方程 HEMT |
| 收稿时间： | 2011-08-03 |
Influence of a two-dimensional electron gas on current-voltage characteristics of Al0.3Ga0.7 N/GaN high electron mobility transistors |
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| Ji Dong,Liu Bing,L&#,Yan-Wu,Zou Miao,Fan Bo-Ling.Influence of a two-dimensional electron gas on current-voltage characteristics of Al0.3Ga0.7 N/GaN high electron mobility transistors[J].Chinese Physics B,2012,21(6):67201-067201. |
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| Authors: | Ji Dong Liu Bing L&# Yan-Wu Zou Miao Fan Bo-Ling |
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| Institution: | a. School of Science, Beijing Jiaotong University, Beijing 100044, China;b. School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing 100044, China |
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| Abstract: | two-dimensional electron gas, high electron mobility transistor, heterointerface, nitridesemiconductor |
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| Keywords: | two-dimensional electron gas high electron mobility transistor heterointerface nitride semiconductor |
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