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利用化学气相反应法对掺杂石墨材料进行了SiC梯度涂层,研究了SiC梯度涂层对掺杂石墨材料热力学性能以及微观结构的影响。获得了约100μm的SiC涂层,涂层后的材料导热性能下降,而机械强度有所增加。对涂层表面的物相成分分析表明,除了SiC之外,还有少量的单质Si。厚膜SiC梯度涂层的掺杂石墨材料在HT-7托卡马克装置中经等离子体放电实验后,SiC的颗粒形貌发生了明显的变化,涂层厚度下降到约30μm。     

HT-7U第一壁材料在HT-7装置中的辐照实验研究

把为HT-7U装置开发的系列碳基面对等离子体材料及其比对样品安装在样品架上，通过磁力传送机构送入HT-7装置刮削层中进行辐照实验研究。经过若干次等离子体放电实验后，取出样品进行表面形貌。表面元素成分及深度分布的X射线光电子能谱分析。结果发展，碳石墨材料的渗杂改性和抗等离子体溅射腐蚀的B4C/SiC梯度功能涂层可以有效地提高其抗待了子体轰击的能力。     

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用煅烧石油焦作填料、煤沥青作粘结剂和B4C、Si、Ti作添加剂，利用热压工艺制备了系列重结晶掺杂石墨，并通过化学气相反应法在掺杂石墨表面沉积了有梯度的SiC涂层。对掺杂石墨的热力学性能、微观结构及在HT-7装置的聚变环境中的行为进行了考察。结果表明：与纯石墨材料相比，掺杂了10%的B4C的重结晶石墨力学性能得到明显的改善，抗弯强度达104Mpa，但导热性能较差；掺杂了Si、Ti的重结晶石墨的热导率高，达314W•m-1•K-1，但力学性能较差；掺杂了BSTDG的石墨在聚变环境中的抗等离子体辐照能力明显提高；在HT-7装置中经过一轮实验的辐照后，SiC涂层厚度因等离子体的刻蚀由初期的40～50μm下降至5μm左右，且局部区域涂层剥落。     

SiC纳米纤维/C/SiC复合材料拉伸行为的分子动力学研究

本文采用分子动力学计算方法和Tersoff作用势研究了无定型碳(amorphous carbon, a-C) 涂层厚度对SiC纳米纤维/SiC纳米复合材料断裂方式及力学性能的影响. 分析结果发现, 随着涂层厚度的增加, 纳米纤维的平均应力集中系数下降, 即足够厚度涂层可以同时起到增强和补韧的作用. 当a-C涂层厚度t ≤ 0.3 nm时, 裂纹直接穿透纤维, 纳米复合材料表现出典型的脆性断裂方式; t = 4.0 nm时, 裂纹发生偏转, SiC纳米纤维发生拔出现象, 此时纳米复合材料的拉伸强度约为无涂层纳米复合材料的4倍, 断裂能则提高一个数量级. 计算结果表明, a-C涂层的厚度是SiC纳米纤维/SiC纳米复合材料中产生韧性机理的重要因素, 即传统微米级陶瓷基复合材料的增韧理论在纳米复合材料中仍适用. 研究结果可望为设计同时具有高强度、高韧性的陶瓷基纳米复合材料提供理论基础.     

HL—1装置等离子体辐照Tic涂层实验分析

一、引言在聚变等离子体中控制杂质的污染被认为是获得高温等离子体的重要问题之一。因此对材料要进行优化选择,例如石墨和碳就是目前有利的孔栏材料和结构材料。但是由于碳的自溅射作用和化学活性,在高温溅射时可形成易挥发的碳化物,如甲烷等从而增加了化学腐蚀。某些含碳的化合物如TiC,SiC和BC以及氮化物如TiN和Si_3N_4等是目前研究的一些有用途的材料。实际上TiC或TiN已经用于孔栏,壁内衬涂层或高频加热天线。     

激光熔覆Al+SiC涂层对镁合金表面耐磨性能的改性

通过脉冲激光器(Nd-YAG)在AZ91D镁合金基底上熔覆Al+SiC粉体。采用扫描电子显微镜、能量色散谱(EDS)和X-射线衍射测定分析熔覆层的显微组织、化学成分和物相组成。研究表明:Al+SiC涂层主要由SiC,β-Mg_(17)Al_(12)及Mg和Al相组成,激光熔覆层与镁合金基底表现出良好的冶金结合。所有样品都具有树枝状结构,且随着SiC质量分数的增大,树枝状和胞状结构的间隔变得更大。熔覆涂层的表面硬度高于基底,并且随着熔覆层中的SiC质量分数的增加而增大,SiC质量分数为40%的熔覆层具有最大的显微硬度,达到180 HV,然而质量分数为10%的熔覆层硬度为136 HV。销盘滑动磨损试验表明,复合涂层中的SiC颗粒和原位合成的Mg_(17)Al_(12)相显著提高了AZ91D镁合金的耐磨损性,其中,SiC质量分数从10%增加到30%过程中磨损体积损失逐渐减少,SiC质量分数在20%~30%时熔覆层具有最好的耐磨性。     

微波等离子体化学气相沉积方法在Si衬底上生长SiC纳米线

应用微波等离子体化学气相沉积方法,在单晶Si(100)衬底上生长出SiC纳米线.应用扫描电子显微镜、透射电子显微镜、能量损失谱(EDS)和选区电子衍射(SAD)等方法对纳米线化学组成和结构进行了分析和表征.给出该纳米线的生长机理 关键词： 微波等离子体化学气相沉积 SiC纳米线 生长机理     

金刚石膜的厚度及背表面过渡层对热导率的影响

 采用微波等离子体化学气相沉积（MWPCVD）方法制备金刚石膜，研究了金刚石膜的厚度以及生长初期的SiC过渡层对其热导率的影响，给出了膜厚和背表面SiC过渡层减薄厚度与金刚石膜热导率的关系。     

激光工业应用

TG156.99 2004064173 激光熔覆Ni基合金/SiC涂层耐冲蚀性能的研究=Research on erosion resistance of laser-claded Ni-based alloy/SiC coating[刊,中]/董刚(浙江工业大学材料科学与工程研究所.浙江,杭州(310014)),白万金…∥表面技术.—2004.33(2).—36-37,42 采用激光熔覆技术分别在45~#钢表面制备Ni基合金及Ni基合金/SiC涂层,研究了熔覆层的硬度和耐冲蚀性能,探讨了熔覆层的冲蚀磨损机理。图4表2参3(严寒)     

SiC纤维增强Ti17合金复合材料轴向残余应力的拉曼光谱和X射线衍射法对比研究

准确测量和分析SiC纤维增强Ti合金复合材料(SiC_f/Ti)中残余应力状态对优化复合材料的成型工艺和理解其失效模式具有重要意义,但其残余应力的实验测量和分析仍是一个挑战.石墨C涂层作为SiC纤维与Ti17基体合金之间必需的扩散障涂层,承载了由纤维与基体之间热不匹配引入的残余应力.本文采用显微拉曼光谱法对比测量纤维表面C涂层在复合材料中和去掉基体无应力态下G峰的峰位,通过石墨C涂层应力态下峰位移动计算出SiCf/C/Ti17复合材料中SiC纤维受到～705.0 MPa的残余压应力.采用X射线衍射方法测量了不同方向上该复合材料中基体钛合金的晶面间距以获取其空间应变,根据三轴应力模型分析了复合材料中基体钛合金沿轴向方向的残余应力为～701.3 MPa的张应力,并通过线性弹性理论转化为SiC纤维的残余压应力为～759.4 MPa.两种测试方法都确定了SiC纤维在成型过程中受到残余压应力,且获得的应力值较为接近,都可以用于对SiC_f/Ti复合材料的残余应力测量.     

面向单晶SiC原子级表面制造的等离子体辅助抛光技术

目前Si基半导体由于其自身材料特性的限制,已经越来越难以满足高速发展的现代电力电子技术对半导体器件的性能要求.SiC作为新一代半导体材料具有显著的性能优势,但由于其属于典型的难加工材料,实现SiC晶圆的高质量与高效率加工成为了推动其产业化应用进程的关键.本综述在回顾近年来SiC超精密加工技术研究进展的基础上,重点介绍了一种基于等离子体氧化改性的SiC高效超精密抛光技术,分析了该技术的材料去除机理、典型装置、改性过程及抛光效果.分析结果表明,该技术具有较高的去除效率,能够获得原子级平坦表面,并且不会产生亚表面损伤.同时针对表面改性辅助抛光技术加工SiC表面过程中出现的台阶现象,探讨了该台阶结构的产生机理及调控策略.最后对等离子体辅助抛光技术的发展与挑战进行了展望.     

Laser plasma monitored by silicon carbide detectors

The excellent physical and chemical properties and the radiation hardness of silicon carbide (SiC) render this material particularly suitable for the realization of radiation detectors. In this paper we describe the main properties of SiC and the processes needed to realize good performance detectors. To this purpose, we made SiC Schottky diodes that were electrical characterized by using different techniques. In order to test the radiation hardness, the diodes were irradiated with different ion beams and the analysis of the electrical measurements allowed to identify the defects responsible of the device degradation. These detectors have been used to monitor the multi-MeV ions of the plasma emitted by irradiation of various targets with 300-ps laser at high intensity (10¹⁶?W/cm²). These measurements highlighted that the use of SiC detectors enhances the sensitivity to ions detection due to the cutting of the visible and soft ultraviolet radiation emitted from plasma. The small rise time and the proportionality to ion energy evidence that these detectors are a powerful tool for the characterization of ion generated by high-intensity pulsed laser.     

High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation

The microwave plasma oxidation under the relatively high pressure(6 kPa)region is introduced into the fabrication process of SiO2/4 H-SiC stack.By controlling the oxidation pressure,species,and temperature,the record low density of interface traps(~4×10¹⁰cm^-2·eV^-1@Ec-0.2 eV)is demonstrated on SiO2/SiC stack formed by microwave plasma oxidation.And high quality SiO2 with very flat interface(0.27-nm root-mean-square roughness)is obtained.High performance Si C metal–oxide–semiconductor field-effect transistors(MOSFETs)with peak field effect mobility of 44 cm^-2·eV^-1is realized without additional treatment.These results show the potential of a high-pressure plasma oxidation step for improving the channel mobility in SiC MOSFETs.     

Features of film growth during plasma anodizing of Al 2024/SiC metal matrix composite

Plasma anodizing is a novel promising process to fabricate corrosion-resistant protective films on metal matrix composites. The corrosion-resistant films were prepared by plasma anodizing on SiC reinforced aluminum matrix composite. The morphology and microstructure of films were analyzed by scanning electron microscopy. Specifically, the morphology of residual SiC reinforcement particles in the film was observed. It is found that the most SiC reinforcement particles have been molten to become silicon oxide, but a few tiny SiC particles still remain in the film close to the composite/film interface. This interface is irregular due to the hindering effect of SiC particles on the film growth. Morphology and distribution of residual SiC particles in film provide direct evidence to identify the local melt occurs in the interior of plasma anodizing film even near the composite/film interface. A model of film growth by plasma anodizing on metal matrix composites was proposed.     

空间用SiC反射镜表面改性的性能和可靠性评估

根据空间应用项目需求,采用等离子辅助电子束蒸发方法对RB SiC基底进行了表面改性,并对表面改性的性能和可靠性进行了相关评估.经测试,改性后RB SiC基底表面粗糙度(rms)降低到0.632 nm|散射系数降低到2.81%,500~1 000 nm范围的平均反射率提高到97.05%,已经接近于抛光良好的微晶玻璃的水平|改性涂层温度稳定性高,与基底结合牢固|加工后,面形精度达到0.119λ(PV)和0.014λ(rms),λ=632.8 nm.评估结果表明,这种SiC基底表面改性的工艺是可靠的,其光学性能满足空间高质量光学系统的要求,适宜空间环境应用.     

Laser-generated ns plasma pulses characterized using SiC Schottky diode

The nonequilibrium plasma generated by nanosecond laser pulse is characterized using a SiC detector connected in time-of-flight configuration to measure the radiations emitted from the plasma. Different metallic targets were irradiated by the pulsed laser at an intensity of 10¹⁰ W/cm² and 200 mJ pulse energy. The SiC allows detecting ultraviolet radiations and soft X-rays, electrons, and ions. The obtained plasma has a temperature of the order of tens to hundreds eV depending on the atomic number of the irradiated target and ion accelerations of the order of 100 eV per charge state.     

Effect of helium implantation on SiC and graphite

Effects of helium implantation on silicon carbide(SiC) and graphite were studied to reveal the possibility of SiC replacing graphite as plasma facing materials. Pressureless sintered SiC and graphite SMF-800 were implanted with He+ions of 20 ke V and 100 ke V at different temperatures and different fluences. The He+irradiation induced microstructure changes were studied by field-emission scanning electron microscopy(FESEM), atomic force microscopy(AFM), and transmission electron microscopy(TEM).     

SiC/C nanocable structure produced in silicon carbide by arc plasma heating

Defect-free and long SiC/C nanocables have been produced by heating SiC powder at 3000°C by employing dc arc plasma (Ar) in a specially designed configuration of graphite arc. Microstructural characterizations of the heat-treated powder carried out by TEM, HRTEM, SAED, EDS, and micro Raman spectroscopy showed the nanocables to consist of a SiC shell/sheath stuffed with wire type solid C core. A possible mechanism is discussed to explain the cable-type growth.     

Comparative study of high temperature anti-oxidation property of sputtering deposited stoichiometric and Si-rich SiC films

Stoichiometric and silicon-rich (Si-rich) SiC films were deposited by microwave electron cyclotron resonance (MW-ECR) plasma enhanced RF magnetron sputtering method. As-deposited films were oxidized at 800 ℃, 900 ℃, and 1000 ℃ in air for 60 min. The chemical composition and structure of the films were analyzed by x-ray photoelectron spectroscopy (XPS), Raman spectroscopy and Fourier transform infrared spectroscopy (FT-IR). The surface morphology of the films before and after the high temperature oxidation was measured by atomic force microscopy. The mechanical property of the films was measured by a nano-indenter. The anti-oxidation temperature of the Si-rich SiC film is 100 ℃ higher than that of the stoichiometric SiC film. The oxidation layer thickness of the Si-rich SiC film is thinner than that of the stoichiometric SiC film in depth direction. The large amount of extra silicon in the Si-rich SiC film plays an important role in the improvement of its high temperature anti-oxidation property.     

Decay processes of photoluminescence in a nanocrystalline SiC thin film

Nanocrystalline (nc)-SiC film has been deposited by helicon wave plasma enhanced chemical vapor deposition technique and intense blue-white light emission is obtained. Microstructure analyses show that the 3C–SiC particles are embed in amorphous SiC matrix, and the average size of the nc-SiC is 3.96 nm. The photon energy of the main photoluminescence (PL) band is higher than the band gap of bulk SiC, which indicates that the optical emission mainly occurs in quantum states of 3C–SiC nanocrystals. In addition, the band tail states of amorphous SiC also contribute to the optical emission. Three decay processes are obtained from time-resolved PL spectra by deconvolution treatment, and the decay components correspond to the quantum confinement effect (QCE), surface states of nc-SiC particles, and band tail of amorphous SiC, respectively. The fractional integrated PL intensity of QCE related decay process decreases dramatically in the lower PL photon energy, indicating that the QCE mainly contributes to the short wavelength optical emission.