碳化硅表面硅改性层的磁介质辅助抛光

为了实现碳化硅表面硅改性层的精密抛光,获得高质量光学表面,对磁介质辅助抛光技术进行研究。设计了适合碳化硅表面硅改性层抛光的磁介质辅助抛光工具,并对抛光工具的材料去除函数进行研究。针对材料去除函数的特性,对数控磁介质辅助抛光的驻留时间算法进行了研究。采用磁介质辅助抛光技术对碳化硅表面硅改性层平面样片进行了抛光实验。经过一次抛光迭代,碳化硅样片表面硅改性层的面形精度(均方根)由0.049λ收敛到0.015λ（λ=0.6328 μm）,表面粗糙度从2 nm改善至0.64 nm。实验结果表明基于矩阵代数的驻留时间算法有效,磁介质辅助抛光适合碳化硅表面硅改性层加工。     

原子发射光谱分析技术在大气等离子体抛光工艺研究中的应用

大气等离子体抛光是一种非接触式的超精密加工方法,它基于低温等离子体化学反应实现原子级的材料去处,避免了表层和亚表层损伤,特别适合于各种难加工材料的超光滑抛光。该方法首次引入了基于电容耦合原理的射频炬式等离子体源,为测试等离子体特性和进行工艺研究,在加工过程中使用微型光纤光谱仪进行光谱监测和采集,进而运用原子发射光谱分析技术初步讨论了射频功率和气体配比对加工过程的影响,分析结果显示：在一定范围内,射频功率对加工速率有着较明显的促进作用,而气体配比对等离子体区成分和表面生成元素的种类影响较大。电子跃迁轨道分析还揭示了处于不同激发态的活性氟原子对应的不同微观状态,为进一步的微观机理研究奠定了理论基础。基于工艺分析的结果,在单晶硅片上实现了Ra0.6 nm的表面粗糙度和32 mm3·min-1的加工速率。     

浮法抛光超光滑表面加工技术

浮法抛光技术首先出现于日本，是加工超光滑表面的先进技术之一。本文详细介绍用浮法抛光加工超光滑表面的机械结构和加工过程，与传统的沥青抛光方法进行了比较，并分析了材料去除机理。最后简单介绍我国研究浮法抛光技术的进展。     

PVD改性RB-SiC表面缺陷研究

为获得高表面质量的PVD改性RB-SiC反射镜,解决实际加工中出现的表面缺陷问题,对缺陷的形成机理及处理方法进行了研究。根据Preston假设设计相关试验,推测表面缺陷是由于PVD改性层中的大颗粒结晶受到较大冲击,从而使大颗粒结晶剥落而非对其产生磨削作用而产生的。试验表明:过高的抛光速度或过高的抛光压力会造成改性层表面缺陷的产生,调整抛光的相对速度及抛光压力等关键工艺参数,可在保持抛光效率的同时有效减少和避免表面缺陷问题的产生。经试验验证,当表面缺陷产生后,通过选择适当的相对速度和抛光压强,改性层去除0.7 m～1 m后,可有效修复缺陷,并且无新的表面缺陷产生。     

空间反射镜基底材料碳化硅表面改性研究

直接抛光后的SiC反射镜表面光学散射仍较大,无法满足高质量空间光学系统的心用需求.为此必须对SiC反射镜进行表而改性,以获得高质量的光学表面.目前国际上较为流行的足制备Si或SiC改性层进行表面改性.分别采用离子辅助电子束蒸发方法制备Si和SiC改性层进行改性,相关测试结果表明:Si改性层结构为立方相,改性后基底表面粗糙度(rms)降到0.620 nm,散射系数减小到1.52%;SiC改性层结构为非晶相,改性后基底表面粗糙度(rms)降到0.743 nm,散射系数减小到2.79%.两种改性层均与基底结合牢固,温度稳定性较高.从可靠性方面考虑,目前在国内第一种方法更适于实际工程应用.该工艺改性后SiC基底表面散射损耗大大降低,表面质量得到明显改善.镀Ag后表面反射率接近于抛光良好的微晶玻璃的水平,已能够满足高质量空间光学系统的应用需要.     

超光滑表面加工方法的新进展

通过回顾超光滑表面加工技术的发展历程,对多种具有代表性的超光滑表面加工方法的原理和应用作了简单阐述,并重点提出和介绍了一种大气等离子体抛光方法。该方法实现了利用常压等离子体激发化学反应来完成超光滑表面的无损伤抛光加工,并首次引入电容耦合式炬型等离子体源,为高质量光学表面的加工提供了一条新的途径。试验结果表明,在针对单晶硅的加工过程中实现了1μm/min的加工速率和Ra 0.6nm的表面粗糙度。     

低温等离子体对材料的表面改性

 冷等离子体对材料的表面改性,通过放电等离子体来优化材料的表面结构,是一种非常先进的材料表面改性方法。冷等离子体的特殊性能可以对金属、半导体、高分子等材料进行表面改性,该技术已广泛应用于电子、机械、纺织等工程领域。等离子体是“物质的第四态”,它是由许多可流动的带电粒子组成的体系。等离子体的状态主要取决于它的化学成分、粒子密度和粒子温度等物理化学参量,其中粒子的密度和温度是等离子体的两个最基本参量。实验室中采用气体放电方式产生的等离子体主要由电子、离子、中性粒子或粒子团组成。     

先进光学制造技术进展

针对高功率固体激光发展的需求,总结了先进光学制造技术方面的研究进展。采用超精密制造技术提高了非球面等元件的加工精度和制造效率,并为解决低缺陷加工提供了技术途径。围绕面形误差控制,特别是中频波前误差控制,发展了多种确定性抛光技术。针对熔石英元件建立了去除-抑制模型及新的抛光技术,有效抑制了亚表面缺陷的产生。     

脆性光学材料超精密加工技术

如何在光学晶体、光学玻璃等脆性材料上高效地制取纳米级光学表现是现代超精密加工技术领域的重点研究课题。近年来，此项技术取得了突破性进展，出现了浮法抛光、离子束加工、韧性加工等新一代脆性光学材料超精密加工技术。从加工机理、加工精度、表面质量、生产率等方面对其进行分析比较，并讨论了令人瞩目的韧性加工技术。     

非热等离子体材料表面处理及功能化研究进展

等离子体技术在现代材料制备和表面处理过程中起着重要的作用.本文聚焦于非热等离子体(NTP)材料表面处理及功能化应用,重点综述NTP在材料表面处理及功能化过程中的最新研究进展,包括激励产生等离子体的等离子体源、NTP材料表面处理及功能化工艺以及具体应用.其中,激励产生等离子体的等离子体源包括感应耦合等离子体/容性耦合等离子体、电子回旋共振/表面波等离子体、螺旋波等离子体、大气压射流等离子体和介质阻挡放电等; NTP材料表面处理及功能化工艺包括等离子体表面接枝和聚合、等离子体增强化学气相沉积和等离子体辅助原子层沉积、等离子体增强反应刻蚀和等离子体辅助原子层刻蚀工艺等;等离子体表面处理及功能化的具体应用领域包括亲水/疏水表面改性、表面微纳加工、生物组织表面处理、催化剂表面处理等.最后提出了NTP技术材料表面处理及功能化的应用前景与发展趋势.     

Novel cavitation fluid jet polishing process based on negative pressure effects

Traditional abrasive fluid jet polishing (FJP) is limited by its high-pressure equipment, unstable material removal rate, and applicability to ultra-smooth surfaces because of the evident air turbulence, fluid expansion, and a large polishing spot in high-pressure FJP. This paper presents a novel cavitation fluid jet polishing (CFJP) method and process based on FJP technology. It can implement high-efficiency polishing on small-scale surfaces in a low-pressure environment. CFJP uses the purposely designed polishing equipment with a sealed chamber, which can generate a cavitation effect in negative pressure environment. Moreover, the collapse of cavitation bubbles can spray out a high-energy microjet and shock wave to enhance the material removal. Its feasibility is verified through researching the flow behavior and the cavitation results of the negative pressure cavitation machining of pure water in reversing suction flow. The mechanism is analyzed through a computational fluid dynamics simulation. Thus, its cavitation and surface removal mechanisms in the vertical CFJP and inclined CFJP are studied. A series of polishing experiments on different materials and polishing parameters are conducted to validate its polishing performance compared with FJP. The maximum removal depth increases, and surface roughness gradually decreases with increasing negative outlet pressures. The surface becomes smooth with the increase of polishing time. The experimental results confirm that the CFJP process can realize a high material removal rate and smooth surface with low energy consumption in the low-pressure environment, together with compatible surface roughness to FJP.     

High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation

The microwave plasma oxidation under the relatively high pressure(6 kPa)region is introduced into the fabrication process of SiO2/4 H-SiC stack.By controlling the oxidation pressure,species,and temperature,the record low density of interface traps(~4×10¹⁰cm^-2·eV^-1@Ec-0.2 eV)is demonstrated on SiO2/SiC stack formed by microwave plasma oxidation.And high quality SiO2 with very flat interface(0.27-nm root-mean-square roughness)is obtained.High performance Si C metal–oxide–semiconductor field-effect transistors(MOSFETs)with peak field effect mobility of 44 cm^-2·eV^-1is realized without additional treatment.These results show the potential of a high-pressure plasma oxidation step for improving the channel mobility in SiC MOSFETs.     

Silica on Silicon Carbide

Silicon carbide (SiC) as both the most important non-oxide ceramic and promising semiconductor material grows stoichiometric SiO ₂ as its native oxide. During passive oxidation, a surface transformation of SiC into silica takes place causing bulk volume and bulk mass increase. This review summarizes state-of-the-art information about the structural aspects of silicon carbide, silica, and SiC–SiO ₂ interfaces and discusses physicochemical properties and kinetics of the processes involved. A special section describes the electronic properties of carbide–oxide interfaces, which are inferior compared to Si–SiO ₂ interfaces, limiting the use of SiC-based electronics. In the oxidation of SiC there is a variety of parameters (e.g., porosity, presence of sintering aids, impurities, crystallographic orientation, surface treatment, and atmospheric composition) influencing the process. Therefore, the kinetics can be complex and will be discussed in detail. Nonetheless, a general linear-parabolic time-law can be found for most SiC materials for passive oxidation, thus indicating a mainly diffusion-controlled mechanism. The pronounced anisotropy of SiC expresses itself by quite different oxidation rates for the various crystallographic faces. Manifold impact factors are reflected by oxidation rate-constants for silicon carbide that vary over orders of magnitude. The understanding of SiC oxidation and silica formation is still limited; therefore, different oxidation models are presented and evaluated in the light of current knowledge.     

Passivation of defect states in Si-based and GaAs structures

Formation of defect states on semiconductor surfaces, at its interfaces with thin films and in semiconductor volumes is usually predetermined by such parameters as semiconductor growth process, surface treatment procedures, passivation, thin film growth kinetics, etc. This paper presents relation between processes leading to formation of defect states and their passivation in Si and GaAs related semiconductors and structures. Special focus is on oxidation kinetics of yttrium stabilized zirconium/SiO₂/Si and Sm/GaAs structures. Plasma anodic oxidation of yttrium stabilized zirconium based structures reduced size of polycrystalline silicon blocks localised at thin film/Si interface. Samarium deposited before oxidation on GaAs surface led to elimination of EL2 and/or ELO defects in MOS structures. Consequently, results of successful passivation of deep traps of interface region by CN⁻ atomic group using HCN solutions on oxynitride/Si and double oxide layer/Si structures are presented and discussed. By our knowledge, we are presenting for the first time the utilization of X-ray reflectivity method for determination of both density of SiO₂ based multilayer structure and corresponding roughnesses (interfaces and surfaces), respectively.     

等离子体光学加工关键技术研究现状

等离子体加工技术是近年来发展起来的先进光学制造技术,具有快速缓解或去除传统光学加工方法导致的表面/亚表面损伤,以及高效、高精度和高分辨率修整光学面形的优势。从等离子体光学加工基本原理出发,基于等离子体激发频率与特征对发生器进行了简要叙述;进一步对各研究机构在等离子体加工技术涉及的射流特性、界面物化反应、损伤去除机理、去除函数、加工热效应和工艺定位等关键技术研究内容及成果进行分析,并对等离子体的新型光学加工技术进行介绍。随着研究的不断深入,构建多物理场和化学反应综合作用下的等离子体加工模型,揭示表面等离子体特性分布与去除函数的内在联系,从而建立准确的去除函数模型,是提高修形精度的发展方向,研究热效应控制方法和补偿策略在降低由热效应带来的修形误差方面起到了重要作用。     

On the topographic and optical properties of SiC/SiO2 surfaces

The roughness of the semiconductor surface substantially influences properties of the whole structure, especially when thin films are created. In our work 3C SiC, 4H SiC and Si/a-SiC:H/SiO₂ structures treated by various oxidation a passivation procedures are studied by atomic force microscopy (AFM) and scanning tunnelling microscopy (STM). Surface roughness properties are studied by fractal geometry methods. The complexity of the analysed surface is sensitive to the oxidation and passivation steps and the proposed fractal complexity measure values enable quantification of the fine surface changes. We also determined the optical properties of oxidized and passivated samples by using visual modelling and stochastic optimization.      

On interface properties of ultra-thin and very-thin oxide/a-Si:H structures prepared by oxygen based plasmas and chemical oxidation

Amorphous hydrogenated silicon (a-Si:H) belongs still to most promising types of semiconductors for its utilization in fabrication of TFTs and thin film solar cell technology due to corresponding cheap a-Si:H-based device production in comparison with, e.g. crystalline silicon (c-Si) technologies. The contribution deals with both two important modes of preparation of very-thin and ultra-thin silicon dioxide films in the surface region of a-Si:H semiconductor (oxygen plasma sources and liquid chemical methods) and electrical, optical and structural properties of produced oxide/semiconductor structures, respectively. Dominant aim is focused on investigation of oxide/semiconductor interface properties and their comparison and evaluation from view of utilization of used technological modes in the nanotechnological industry. Following three basic types of oxygen plasma sources were used for the first time in our laboratories for treatments of surfaces of a-Si:H substrates: (i) inductively coupled plasma in connection with its applying at plasma anodic oxidation; (ii) rf plasma as the source of positive oxygen ions for plasma immersion ion implantation process; (iii) dielectric barrier discharge ignited at high pressures.The liquid chemical manner of formation SiO₂/a-Si:H structures uses 68 wt% nitric acid aqueous solutions (i.e., azeotropic mixture with water). Their application in crystalline Si technologies has been presented with excellent results in the formation of ultra-thin SiO₂/c-Si structures [H. Kobayashi, M. Asuha, H.I. Takahashi, J. Appl. Phys. 94 (2003) 7328].Passivation of surface and interface states by liquid cyanide treatment is additional original technique applied after (or before) formation of almost all formed thin film/a-Si:H structures. Passivation process should be used if high-quality electronical parameters of devices can be reached.