面向单晶SiC原子级表面制造的等离子体辅助抛光技术

目前Si基半导体由于其自身材料特性的限制,已经越来越难以满足高速发展的现代电力电子技术对半导体器件的性能要求.SiC作为新一代半导体材料具有显著的性能优势,但由于其属于典型的难加工材料,实现SiC晶圆的高质量与高效率加工成为了推动其产业化应用进程的关键.本综述在回顾近年来SiC超精密加工技术研究进展的基础上,重点介绍了一种基于等离子体氧化改性的SiC高效超精密抛光技术,分析了该技术的材料去除机理、典型装置、改性过程及抛光效果.分析结果表明,该技术具有较高的去除效率,能够获得原子级平坦表面,并且不会产生亚表面损伤.同时针对表面改性辅助抛光技术加工SiC表面过程中出现的台阶现象,探讨了该台阶结构的产生机理及调控策略.最后对等离子体辅助抛光技术的发展与挑战进行了展望.

Plasma-assisted polishing for atomic surface fabrication of single crystal SiC

At present,owing to the inherent limitations of the material characteristics of Si based semiconductor materials,Si based semiconductors are facing more and more challenges in meeting the performance requirements of the rapidly developing modern power electronic technologies used in semiconductor devices.As a new generation of semiconductor material,SiC has significant performance advantages,but it is difficult to process the SiC wafers with high-quality and high-efficiency in their industrial application.Reviewing the research progress of ultra-precision machining technology of SiC in recent years,we introduce plasma oxidation modification based highly efficient polishing technology of SiC in this paper.The material removal mechanism,typical device,modification process,and polishing result of this technology are analyzed.The analysis shows that the plasma oxidation modification possesses high removal efficiency and atomically flat surfaces without surface or subsurface damages.Furthermore,aiming at step-terrace structures produced during SiC surface processing with different polishing technologies,the generation mechanism and control strategy of periodic atomic layer step-terrace structures are discussed.Finally,the development and challenge of plasma-assisted polishing technology are prospected.