Laser-generated ns plasma pulses characterized using SiC Schottky diode |
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Authors: | Lorenzo Torrisi Alfio Torrisi Mariapompea Cutroneo |
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Institution: | 1. Dipartimento MIFT, Università di Messina, Messina, Italy;2. Nuclear Physics Institute, AS CR, Rez, Czech Republic |
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Abstract: | The nonequilibrium plasma generated by nanosecond laser pulse is characterized using a SiC detector connected in time-of-flight configuration to measure the radiations emitted from the plasma. Different metallic targets were irradiated by the pulsed laser at an intensity of 1010 W/cm2 and 200 mJ pulse energy. The SiC allows detecting ultraviolet radiations and soft X-rays, electrons, and ions. The obtained plasma has a temperature of the order of tens to hundreds eV depending on the atomic number of the irradiated target and ion accelerations of the order of 100 eV per charge state. |
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Keywords: | Laser-generated plasma Photopeak SiC-TOF SiC detector |
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