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1.
在GaAs(110)衬底上生长的半导体材料有诸多优良性能,使得在非极性GaAs(110)衬底上获得高质量各类异质结材料,成为近年来分子束外延生长关注的课题.考虑GaAs(110)表面是Ga和As共面,最佳生长温度窗口很小;反射式高能电子衍射的(1×1)再构图案对生长温度和V/Ⅲ束流比不敏感,难于通过观察再构图案的变化,准确地找到最佳生长条件.作者在制备GaAs(110)量子阱过程中,观察到反射式高能电子衍射强度振荡呈现出的单双周期变化.这意味着不同工艺条件下,在 GaAs(110)衬底上量子阱有单层和双层两种生长模式.透射电子显微镜和室温光致荧光光谱测量结果表明:在双层生长模式下量子阱样品光学性能较差,而在单层生长模式下量子阱光学性能较好,但是界面会变粗糙.利用这一特点,我们采用反射式高能电子衍射强度振荡技术,找到了一种在GaAs(110)衬底上生长高质量量子阱的可行方法.
关键词:
反射高能电子衍射
量子阱
分子束外延 相似文献
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在矢量衍射理论基础上给出了任意入射状态下二维平面光栅的光栅方 程,推导出二维平面光栅角色散公式的完整解析形式,确立了二维平面光栅衍射极角 角色散(第一类角色散)和衍射方位角角色散(第二类角色散)的概念. 通过二维平面光栅 衍射极角和衍射方位角角色散的理论分析和数值计算,阐明了当入射波矢偏离光栅法线时, 衍射光斑阵列发生畸变的机理,并明确指出了引起衍射方位角角色散的突变、导致衍射光斑 阵列剧烈变化的条件,因而具有理论上的意义. 在实际应用方面,以晶体和量子点 的x射线衍射、低能电子衍射和反射式高能电子衍射为
关键词:
二维平面光栅
衍射极角角色散
衍射方位角角色散
晶体电子衍射 相似文献
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以反射式高能电子衍射(RHEED)作为实时监测工具,根据GaAs(100)表面重构相与衬底温度、As4等效束流压强之间的关系,对分子束外延(MBE)系统中衬底测温系统进行了校准,这种方法也适用于其他的MBE系统.为生长高质量的外延薄膜材料、研究InGaAs表面粗糙化及相变等过程提供了实验依据.
关键词:
分子束外延
反射式高能电子衍射
表面重构
温度校准 相似文献
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采用一种新的简便的氢钝化方法,可以在Si(100)衬底表面获得稳定的钝化层。用俄歇电子能谱(AES),反射式高能电子衍射(RHEED),C-V和二次离子质谱(SIMS)等方法对衬底表面及其上面生长的分子束外延层进行检测,发现这种方法可以有效地防止衬底表面被碳、氧沾污,降低退火温度至少200℃,并完全消除外延层与Si(100)衬底界面处的高浓度硼尖峰。在此基础上,结合衬底表面锗束处理的实验结果,对硼尖峰的主要来源是由于硅衬底表面的氧化层这一观点提供了新的有力证据。 相似文献
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在Si(100)衬底上用分子束外延在不同的温度下生长了不同组份的GexSi1-x/Si应变层超晶格。用反射式高能电子衍射、X射线双晶衍射、卢瑟福背散射、透射电子显微镜以及Raman。散射等测试方法研究了GexSi1-x/Si超晶格的生长及其结构特性。结果表明,对不同合金组份的超晶格,其最佳生长温度不同。x值小,生长温度高;反之,则要求生长温度低。对于x为0.1—0.6,在400—600℃的生长温度范围能够长成界面平整、
关键词: 相似文献
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We study the nucleation phase of molecular beam epitaxy of (hexagonal) MnAs on (cubic) GaAs (0 0 1) using reflection high-energy electron diffraction (RHEED) azimuthal scans. The nucleation proceeds from a non-reconstructed initial stage through randomly oriented small nuclei and two orientation stages to the final single-phase epitaxial orientation. The fascinatingly complex nucleation process contains elements of both Volmer-Weber and Stranski-Krastanov growth. The measurement demonstrates the potential of high-resolution RHEED techniques to assess details of the surface structure during epitaxy. 相似文献
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W. Gao 《Surface science》2006,600(12):2572-2580
The interaction of vanadium oxide with epitaxial anatase films exposing (1 0 1) terraces was characterized. The TiO2 films were grown on vicinal LaAlO3 (1 1 0) substrates by oxygen plasma-assisted molecular beam epitaxy (OPA-MBE); reflection high energy and low energy electron diffraction (RHEED and LEED) indicated that the films exposed (1 0 1) terraces of the anatase TiO2 polymorph. When a vanadium oxide monolayer was deposited onto the anatase surface by OPA-MBE at 725 K, only (1 × 1) RHEED and LEED patterns were observed. The V X-ray photoelectron spectroscopy (XPS) peak intensities indicated that the monolayer wetted the anatase surface and so the diffraction patterns were attributed to an epitaxial vanadia layer. Analysis of the vanadium oxide monolayer by X-ray and ultraviolet photoelectron spectroscopies revealed that the V was predominantly 5+. When the vanadia coverage was increased at 725 K, Auger electron spectra showed only very slow attenuation of the anatase Ti peaks while spots began to develop in RHEED patterns recorded along the LaAlO3 direction; both indicative of 3-D cluster formation. In the orthogonal direction, the RHEED patterns showed unusual diagonal streaks. Meanwhile, the (1 × 1) LEED pattern persisted even after 30 nm of vanadia was deposited. This was attributed to gaps between the 3-D clusters exposing the epitaxial monolayer. Core level XPS spectra of the 3-D clusters revealed a broad V 2p3/2 peak that was centered at the position expected for V4+ but could be deconvoluted into three peaks corresponding to V3+, V4+, and V5+. It is shown that crystallographic shear that accommodates such variations in the oxygen content of V oxides can lead to the diagonal streaks in RHEED patterns recorded along the LaAlO3 [0 0 1] direction even as the pattern in the orthogonal direction shows sharp transmission spots. The results show that vanadia growth on anatase (1 0 1) proceeds through the Stranski-Krastanov mode with a strong vanadia-titania interaction stabilizing a dispersed vanadia monolayer. The results are compared with previous data for vanadia growth on anatase (0 0 1) where smooth, epitaxial VO2 films grow ad infinitum. 相似文献
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We have studied the epitaxial growth of Au and Pt layers on Fe3O4(1 1 1) as a function of the deposition temperature and thickness. The layers were deposited by UHV sputtering and the structural properties were investigated by reflection high energy electron diffraction (RHEED), X-ray experiments and transmission electron microscopy (TEM). The epitaxial growth of both metals was obtained whatever the deposition conditions but the wetting is however different for the two metals. Comparison between the coverage ratios of Au and Pt is correlated with their surface and interfaces energies. The optimum conditions to achieve a 2D flat epitaxial metallic layer are determined. 相似文献
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We have reported a one step growth of a high quality β-FeSi2 epitaxial film on hydrogen terminated Si(1 1 1) by using molecular beam epitaxy (MBE) without template layer or post-growth annealing. In the present work, the growth process was studied by analyzing X-ray diffraction (XRD) spectra, reflective high energy electron diffraction (RHEED) and atomic force microscopy (AFM) observations on the samples grown with different growth times from 10 s to 1 h. A phase transformation from γ-FeSi2 to β-FeSi2 was confirmed existing in the crystal film growth, as well as the growth mode changing from three-dimensional (3D) to two-dimensional (2D) mode. 相似文献
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Epitaxial Properties of Co-Doped ZnO Thin Films Grown by Plasma Assisted Molecular Beam Epitaxy 总被引:1,自引:0,他引:1 下载免费PDF全文
High quality Co-doped ZnO thin films are grown on single crystalline Al2O3(0001) and ZnO(0001) substrates by oxygen plasma assisted molecular beam epitaxy at a relatively lower substrate temperature of 450℃. The epitaxial conditions are examined with in-situ reflection high energy electron diffraction (RHEED) and ex-situ high resolution x-ray diffraction (HRXRD). The epitaxial thin films are single crystal at film thickness smaller than 500nm and nominal concentration of Co dopant up to 20%. It is indicated that the Co cation is incorporated into the ZnO matrix as Co^2+ substituting Zn^2+ ions. Atomic force microscopy shows smooth surfaces with rms roughness of 1.9 nm. Room-temperature magnetization measurements reveal that the Co-doped ZnO thin films are ferromagnetic with Curie temperatures Tc above room temperature. 相似文献
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C. T. Foxon 《Applied Surface Science》1991,50(1-4):28-33
This article discusses the application of reflection high energy electron diffraction (RHEED) to the control of growth by molecular beam epitaxy (MBE), metal-organic MBE (MOMBE) and chemical beam epitaxy (CBE). RHEED can be used to control the growth rate and composition for all three techniques. In addition, it has been used to control substrate temperature using changes in surface structure. It has also been used to obtain important information on the dynamics of the growth process. From this sort of data, a rather complete picture of the epitaxial process has been obtained. This has led to these UHV deposition techniques becoming the most important methods of growth for III-V compound semiconductor thin films. 相似文献
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C. J. Gutierrez S. H. Mayer J. C. Walker 《Journal of magnetism and magnetic materials》1989,80(2-3):299-304
We have grown good quality single crystal heterostructures of Fe(110) / Ag(111) with a high degree of epitaxy not previously achieved for films this thin. The iron-free mica substrates are transparent to gamma rays and aid in the epitaxial growth process. These films were characterized by reflection high-energy electron diffraction (RHEED), residual gas analysis (RGA), and transmission Mössbauer spectroscopy. The film with the thickest Fe component (8 monolayers) showed a hyperfine field comparable to bulk while the films with the thinnest Fe components (1.3 and 2.0 monolayers) showed an enhanced hyperfine field at 4.2 K. All the films were magnetically ordered at all the temperatures measured. Most importantly, and in contrast to other work, the direction of magnetization was in-plane for all of the films. 相似文献
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《Applied Surface Science》2001,169(1-2):47-51
Epitaxial anatase TiO2 thin films were successfully grown on (0 0 1) SrTiO3 substrates by the laser molecular-beam epitaxy (laser-MBE) method. The whole growth process is monitored by in situ reflection high-energy electron diffraction (RHEED). RHEED monitoring shows a transition from a streaky pattern to a spot pattern during deposition, indicating different growth modes of TiO2 film. The RHEED patterns are in consistent with the RHEED intensity oscillation results. The atomic force microscopy (AFM) and X-ray diffraction (XRD) investigation show that the thin films have single crystalline orientation with roughness less than three unit cells. 相似文献
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The interaction of oxygen with a clean (110) molybdenum surface has been studied by LEED and RHEED. At room temperature two simple chemisorbed structures are found, at higher exposures a multiple order pattern is seen. At temperatures above 750 K a complex LEED pattern is observed. Initially a corresponding RHEED pattern is seen which has a different structure. Epitaxial oxide nucleation may be followed by RHEED but the initial process is not seen by LEED. More extensive epitaxial films are needed before oxide reflexions appear in the LEED pattern. The formation of an epitaxial oxide film is accompanied by the growth of {100} molybdenum facets. These may be seen after the film has been carefully evaporated away. The nuclei of oxide which form are shown by both RHEED and transmission microscopy of replicas to be characteristically shaped. 相似文献
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During epitaxial growth of MnAs on GaAs(001) by molecular-beam epitaxy (MBE) the surface exhibits various reconstructions depending on the growth conditions. These reconstructions have been studied during growth by reflection high-energy electron diffraction (RHEED) and reflectance difference spectroscopy (RDS). A feature sensitive to the surface structure was identified in the RD spectra. After growth, the (1×2) and (1×1) reconstructions were cooled down to room temperature and imaged in ultrahigh vacuum with a conventional scanning tunneling microscope (STM). Atomic-scale images of these surfaces are presented. 相似文献