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报道了硅基有机微腔的电致发光(EL).该微腔由上半透明金属膜、中心有源多层膜和多孔硅分布Bragg反射镜(PS DBR)组成.半透明金属膜由Ag(20nm)构成,充当发光器件的负电极和微腔的上反射镜.有源多层膜由Al (1 nm) / LiF(05 nm) /Alq3/Alq3:DCJTB/NPB/CuPc/ITO/SiO2组成,其中的Al/LiF为电子注入层,ITO为正电极,SiO2为使正、负电极电隔离的介质层.该PS DBR是采用设备简单、成本低廉且非常省时的电化学腐蚀法用单晶Si来制备的;该PS
关键词:
电化学腐蚀
电致发光
窄峰发射
硅基有机微腔 相似文献
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用导纳谱技术研究了两类Si基量子阱样品基态子能级的性质.基于量子阱中载流子的热激发模型,从导纳谱中得到的激发能值被认为是阱中重空穴基态位置到阱顶的距离.对于SiGe合金和Si形成的组分量子阱,主要研究了退火对重空穴基态子能级的影响.发现样品的退火温度为800℃时,随退火时间延长,激发能增加.对此现象的解释是,由于Si,Ge互扩散,导致界面展宽,量子限制效应降低,重空穴基态位置下降,从而激发能增加.900℃下退火,由于扩散系数增大和应变弛豫加强,激发能值单调下降,量子限制效应引起的变化被掩盖.对于B高浓度超
关键词: 相似文献
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本文研究了不同电子衍射条件对Si(111)外延时的反射式高能电子衍射(RHEED)强度振荡的影响,在保持生长条件不变的情况下,沿[112]方位观测时,不同入射角下其强度振荡的相位和初始瞬态响应变化很大,甚至会发生180°相位变化,而在[011]方位观测时,其相位的变化不明显,结合Si(111)面的RHEED强度摇摆曲线测量结果,表明这种与电子衍射条件有关的振荡特性变化,实际上反映了由电子多重散射机理引起的RHEED强度振荡两种情形,对RHEED强度的初始瞬态响应机理也作了探讨。
关键词: 相似文献
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Compositional and structural evolution of the titanium dioxide formation by thermal oxidation 下载免费PDF全文
Titanium oxide films were prepared by annealing DC magnetron sputtered titanium films in an oxygen ambient. X-ray diffraction (XRD), Auger electron spectroscopy (AES) sputter profiling, MCs^+-mode secondary ion mass spectrometry (MCs^+-SIMS) and atomic force microscopy (AFM) were employed, respectively, for the structural, com- positional and morphological characterization of the obtained films. For temperatures below 875 K, titanium films could not be fully oxidized within one hour. Above that temperature, the completely oxidized films were found to be rutile in structure. Detailed studies on the oxidation process at 925K were carried out for the understanding of the underlying mechanism of titanium dioxide (TiO2) formation by thermal oxidation. It was demonstrated that the formation of crystalline TiO2 could be divided into a short oxidation stage, followed by crystal forming stage. Relevance of this recognition was further discussed. 相似文献
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RAMAN SCATTERING INTENSITIES OF FOLDED LONGITUDINAL ACOUSTIC PHONONS IN GexSi1-x/Si SUPERLATTICES 下载免费PDF全文
In terms of photoelastic mechanism we have investigated the Raman scattering intensities of the folded longitudinal acoustic (FLA) phonons in GexSi1-x/ Si superlattices (SLs), taking into account the differences between the acoustic and photoelastic parameters of the two constituents in the SLs. The relative intensities calculated for the FLA phonons are in excellent agreement with the experimental results at the frequencies up to about 50 cm-1. The broadening of the linewidth arising from the so called strong acoustic attenuation, which was reported previously located around the frequency 15 cm-1 in GexSi1-x/Si SLs(x≈0.5), has not been observed in this work. 相似文献
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MBE Growth of Highly Relaxed Si0.45 Ge0.55 Films with Very Low Misfit Dislocation Density on Si (001) Substrates 下载免费PDF全文
We investigate the molecular-beam-epitaxy growth of highly relaxed Si0.45 Ge0.55 films with very low dislocation densities. By using the Si3N4 film as the mask material, the Si0.45Ge0.55 film can be grown on a compositionally stepwise graded SiGe buffer layer in 3 μm× 3 μm windows on a Si (001) substrate. Raman scattering spectroscopy measurement shows that more than 90% strain of the Si0.45Ge0.55 film is relaxed, and almost neither misfit dislocation lines nor etch pits of thread dislocations could be observed when the sample is etched by the modified Schimmel etchant. We suggest that the results can be explained by influence of the edge-induced strain relaxation of the epitaxial film and the edge-induced stress of the mask material. 相似文献
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RAMAN SCATTERING INTENSITIES OF FOLDED LONGITUDINAL ACOUSTIC PHONONS IN GexSi1-x/Si SUPERLATTICES 下载免费PDF全文
In terms of photoelastic mechanism we have investigated the Raman scattering intensities of the folded longitudinal acoustic (FLA) phonons in GexSi1-x/ Si superlattices (SLs), taking into account the differences between the acoustic and photoelastic parameters of the two constituents in the SLs. The relative intensities calculated for the FLA phonons are in excellent agreement with the experimental results at the frequencies up to about 50 cm-1. The broadening of the linewidth arising from the so called strong acoustic attenuation, which was reported previously located around the frequency 15 cm-1 in GexSi1-x/Si SLs(x≈0.5), has not been observed in this work. 相似文献