GexSi1-x/Si应变层超晶格的分子束外延生长及其特性研究

在Si(100)衬底上用分子束外延在不同的温度下生长了不同组份的Ge_xSi_1-x/Si应变层超晶格。用反射式高能电子衍射、X射线双晶衍射、卢瑟福背散射、透射电子显微镜以及Raman。散射等测试方法研究了Ge_xSi_1-x/Si超晶格的生长及其结构特性。结果表明,对不同合金组份的超晶格,其最佳生长温度不同。x值小,生长温度高;反之,则要求生长温度低。对于x为0.1—0.6,在400—600℃的生长温度范围能够长成界面平整、 关键词：

MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERI-ZATION OF GexSi1-x/Si STRAINED-LAYER SUPERLATTICES

Ge_xSi_1-x/Si strained-layer superlattices were grown on Si(lOO) substrates under different temperatures by molecular beam epitaxy. Methods such as reflection high energy electron diffraction, X-ray double crystal diffraction, Rutherford back scattering, transmission electron microscopy and Raman scattering have been applied to study the growth and characteristics of the Ge_xSi_1-x/Si superlattices. The result show that the optimum growth temperature are different for superlattices with different composition, the smaller the x the higher the growth temperature, and vice versa. For x = 0.1-0.6, the Ge_xSi_1-x/Si superlattices with flat interfaces, good crystal perfection and uniform periodicity can be obtained with growth temperature in the range of 400-600℃.