| X射线衍射研究表面活化剂对异质外延薄层Ge结构的影响 |
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| 引用本文： | 朱海军,蒋最敏,郑文莉,姜晓明,徐阿妹,毛明春,胡冬枝,张翔九,王迅.X射线衍射研究表面活化剂对异质外延薄层Ge结构的影响[J].物理学报,1997,46(9):1796-1800. |
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| 作者姓名： | 朱海军 蒋最敏 郑文莉 姜晓明 徐阿妹 毛明春 胡冬枝 张翔九 王迅 |
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| 作者单位： | (1)复旦大学应用表面物理国家重点实验室; (2)中国科学院高能物理研究所 |
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| 摘 要： | 利用原位的反射式高能电子衍射和非原位的X射线衍射技术，研究了活化剂Sb对于Ge在Si上外延过程的影响．当没有活化剂、Ge层厚度为6nm时，外延Ge层形成岛状，应力完全释放．当有Sb时、Ge在Si上的生长是二维的，并且应力释放是缓慢的，即使Ge外延层厚为6nm，仍有42%的应变没有弛豫．
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| 关 键 词： | X射线衍射 锗结构 异质外延薄层 表面活化剂 |
| 收稿时间： | 1996-12-30 |
SURFACTANT EFFECT ON THE STRUCTURE OF THIN Ge HETEROEPILAYERS STUDIED BY X-RAY DIFFRACTION |
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| ZHU HAI-JUN,JIANG ZUI-MIN,ZHENG WEN-LI,JIANG XIAO-MING,XU A-MEI,MAO MING-CHUN,HUDONG ZHI,ZHANG XIANG-JIU and WANG XUN.SURFACTANT EFFECT ON THE STRUCTURE OF THIN Ge HETEROEPILAYERS STUDIED BY X-RAY DIFFRACTION[J].Acta Physica Sinica,1997,46(9):1796-1800. |
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| Authors: | ZHU HAI-JUN JIANG ZUI-MIN ZHENG WEN-LI JIANG XIAO-MING XU A-MEI MAO MING-CHUN HUDONG ZHI ZHANG XIANG-JIU and WANG XUN |
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| Abstract: | The effect of Sb on Ge epilayer grown on Si(001) is investigated in situ by RHEED and ex situ by X-ray diffraction.Without Sb,island formation takes place when Ge epilayer is 6nm thick,and the strain in Ge epilyer is totally relaxed.With Sb,the growth mode of Ge on Si is two- dimensional, and the strain is relaxed gradually.Even if the thickness of the Ge epilayer is 6nm, 42%- strain is still not relaxed. |
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