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本文设计了一种基于Franz-Keldysh (FK) 效应的GeSi电吸收调制器. 调制器集成了脊形硅单模波导. 光由脊形硅波导以倏逝波形式耦合进锗硅吸收层. 在硅基锗二极管FK效应实验测试的基础上, 有源区调制层锗硅中的硅组分设计为1.19%, 从而使得器件工作在C (1528–1560 nm) 波段. 模拟结果显示该调制器的3 dB带宽可达64 GHz, 消光比为8.8 dB, 而插损仅为2.7 dB.
关键词:
锗硅
调制器
电光集成 相似文献
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从固体模型理论的结果出发,计算了生长于Si(100)衬底上x值小于085的Si1-xGex合金材料(能带结构为类Si结构)的间接带隙与应变的关系,结 果表明,应变的S iGe材料的带隙和完全弛豫状态下材料的带隙之差与应变呈线性关系.基于这一结果,提出了 用测量带隙来间接测定SiGe/Si应变状态的方法.用带隙法和x射线双晶衍射法测量了不同应 变状态下的SiGe/Si多量子阱材料的应变弛豫度,两者可以较好的符合,表明带隙法测量SiG e应变弛豫度是可行的.
关键词:
SiGe合金
应变
带隙 相似文献
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Uni-traveling-carrier photodiodes(UTC-PDs)with ultrafast response and high saturation output are reported.A gradient doping layer and a narrow InP cliff layer were introduced to enhance the saturation and bandwidth characteristics.We measured the dark current,photo response,bandwidth,and saturation current of the fabricated UTC devices.For a15-μm-diameter device,the dark current was 3.5 nA at a reverse bias of 1 V,and the 3-dB bandwidth was 17.2 GHz at a reverse bias of 5 V,which are comparable to the theoretically values.The maximum responsivity at 1.55μm was 0.32 A/W.The saturation output current was over 19.0 mA without bias. 相似文献
4.
镜面起伏对1.55μm Si基MEMS光滤波器的影响 总被引:6,自引:0,他引:6
用传输矩阵方法,在简化的光学模型基础上,分别讨论了分布式Bragg反射镜DBR(Distributed Bragg Reflector)的生长精度及镜面起伏对1.55 μm Si基MEMS(Micro-Electro-Mechanical-System)可调谐光滤波器透射谱的影响.计算表明:DBR生长误差仅使主透射峰位置发生变化,而镜面起伏是导致主透射峰性能劣化的主要原因,它使得FWHM增大,透射峰强度下降.理论计算结果能较好地解释实验现像.在此基础上,进一步讨论了引起镜面起伏的多种原因,并提出了可能的解决方法. 相似文献
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Waveguide-integrated Ge/Si heterostructure avalanche photodetectors(APDs) were designed and fabricated using a CMOS-compatible process on 8-inch SOI substrate. The structure of the APD was designed as separate-absorption-chargemultiplication(SACM) using germanium and silicon as absorption region and multiplication region, respectively. The breakdown voltage(V_b) of such a device is 19 V at reverse bias and dark current appears to be 0.71 μA at 90% of the V_b. The device with a 10-μm length and 7-μm width of Ge layer shows a maximum 3-dB bandwidth of 17.8 GHz at the wavelength of 1550 nm. For the device with a 30-μm-length Ge region, gain-bandwidth product achieves 325 GHz. 相似文献
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Band structure, electron distribution, direct-bandgap light emission, and optical gain of tensile strained, n-doped Ge at different temperatures were calculated. We found that the heating effects not only increase the electron occupancy rate in the Γ valley of Ge by thermal excitation, but also reduce the energy difference between its Γ valley and L valley. However,the light emission enhancement of Ge induced by the heating effects is weakened with increasing tensile strain and n-doping concentration. This phenomenon could be explained by that Ge is more similar to a direct bandgap material under tensile strain and n-doping. The heating effects also increase the optical gain of tensile strained, n-doped Ge at low temperature, but decrease it at high temperature. At high temperature, the hole and electron distributions become more flat, which prevent obtaining higher optical gain. Meanwhile, the heating effects also increase the free-carrier absorption. Therefore, to obtain a higher net maximum gain, the tensile strained, n-doped Ge films on Si should balance the gain increased by the heating effects and the optical loss induced by the free-carrier absorption. 相似文献
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随着波分复用技术的发展,成本低廉,易与Si基微电子集成电路集成的长波长探测器越来越受到人们的重视。Si1-kGek/Si量子阱材料在1.3μm石英光纤波段有着明显的响应。但是由于SiGe材料间接带隙结构,吸收系数小,SiGe探测器的应用受到限制。由于(heterojunction phototransistor异质结光敏晶体管)HPT具有内部增益,SiGeHPT有望得到广泛应用。本文在国内首次报道了利用自己研制的UHV-CVD生长的SiGeHPT。在该结衍射和TEM进行表征,并且制作了原型器件,器件的光电流谱表明器件在5V偏压下在1.3μm波段响应度达1mA/W,光增益约为10。同时我们设计了SOR上面的RCEHPT,并进行光电响应模拟,模拟表明RCE HPT的量子效率可达8%,增加吸收区材料Ge组分到0.5,量子效率可提高到30%,半高度为1.5nm,适应光通讯的要求。 相似文献
10.
Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate 下载免费PDF全文
Tensile strain,crystal quality,and surface morphology of 500 nm thick Ge films were improved after rapid thermal annealing at 900 C for a short period(20 s).The films were grown on Si(001)substrates by ultra-high vacuum chemical vapor deposition.These improvements are attributed to relaxation and defect annihilation in the Ge films.However,after prolonged(20 s)rapid thermal annealing,tensile strain and crystal quality degenerated.This phenomenon results from intensive Si–Ge mixing at high temperature. 相似文献