排序方式: 共有27条查询结果,搜索用时 15 毫秒
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使用低、高温两步法生长的高质量Ge薄膜作为缓冲层,在Si(001)衬底上采用分子束外延法生长出Ge0.975Sn0.025合金薄膜.X射线双晶衍射和卢瑟福背散射谱等测试结果表明,Ge0.975Sn0.025合金薄膜具有很好的晶体质量,并且没有发生Sn表面分凝.另外,Ge0.975Sn0.025合金薄膜在500 ℃下具有很好的热稳定性,有望在Si基光电器件中得到应用.
关键词:
GeSn
Ge
分子束外延
外延生长 相似文献
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从固体模型理论的结果出发,计算了生长于Si(100)衬底上x值小于085的Si1-xGex合金材料(能带结构为类Si结构)的间接带隙与应变的关系,结 果表明,应变的S iGe材料的带隙和完全弛豫状态下材料的带隙之差与应变呈线性关系.基于这一结果,提出了 用测量带隙来间接测定SiGe/Si应变状态的方法.用带隙法和x射线双晶衍射法测量了不同应 变状态下的SiGe/Si多量子阱材料的应变弛豫度,两者可以较好的符合,表明带隙法测量SiG e应变弛豫度是可行的.
关键词:
SiGe合金
应变
带隙 相似文献
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介绍了偏振差分反射光谱的原理,并结合半导体材料平面内光学各向异性的来源,总结了偏振差分反射光谱作为一种重要的表面、界面分析技术在半导体材料研究中的应用,并分析指出其在Si基材料电光改性研究中将会起到重要作用. 相似文献
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Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon 下载免费PDF全文
Strain-compensated Ge/Si0.15Ge0.85 multiple quantum wells were grown on an Si0.1>Ge0.9 virtual substrate using ultrahigh vacuum chemical vapor deposition technology on an n+-Si(001) substrate. Photoluminescence measurements were performed at room temperature, and the quantum confinement effect of the direct-bandgap transitions of a Ge quantum well was observed, which is in good agreement with the calculated results. The luminescence mechanism was discussed by recombination rate analysis and the temperature dependence of the luminescence spectrum. 相似文献
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A comparison of silicon oxide and nitride as host matrices on the photoluminescence from Er+ ions 下载免费PDF全文
This paper compares the properties of silicon oxide and nitride as host matrices for Er ions.Erbium-doped silicon nitride films were deposited by a plasma-enhanced chemical-vapour deposition system.After deposition,the films were implanted with Er3+ at different doses.Er-doped thermal grown silicon oxide films were prepared at the same time as references.Photoluminescence features of Er3+ were inspected systematically.It is found that silicon nitride films are suitable for high concentration doping and the thermal quenching effect is not severe.However,a very high annealing temperature up to 1200° C is needed to optically activate Er3+,which may be the main obstacle to impede the application of Er-doped silicon nitride. 相似文献
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Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature 下载免费PDF全文
Well-aligned and closely-packed silicon nanopillar (SNP) arrays are fabricated by using a simple method with magnetron sputtering of Si on a porous anodic alumina (PAA) template at room temperature. The SNPs are formed by selective growth on the top of the PAA pore walls. The growth mechanism analysis indicates that the structure of the SNPs can be modulated by the pore spacing of the PAA and the sputtering process and is independent of the wall width of the PAA. Moreover, nanocrystals are identified by using transmission electron microscopy in the as-deposited SNP samples, which are related to the heat isolation structure of the SNPs. The Raman focus depth profile reveals a high crystallization ratio on the surface. 相似文献
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InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm 下载免费PDF全文
In this paper, we have demonstrated a high performance waveguide photodiode integrated diluted waveguide serving as a fibre-to-waveguide coupler to achieve high coupling efficiency. High responsivity (> 1 A/W), high saturation power (> 45 mA) in the static state and extremely low dark current density (0.04 pA/μm2) with 3 dB bandwidth at 13.4 GHz have been achieved. 相似文献
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镜面起伏对1.55μm Si基MEMS光滤波器的影响 总被引:6,自引:0,他引:6
用传输矩阵方法,在简化的光学模型基础上,分别讨论了分布式Bragg反射镜DBR(Distributed Bragg Reflector)的生长精度及镜面起伏对1.55 μm Si基MEMS(Micro-Electro-Mechanical-System)可调谐光滤波器透射谱的影响.计算表明:DBR生长误差仅使主透射峰位置发生变化,而镜面起伏是导致主透射峰性能劣化的主要原因,它使得FWHM增大,透射峰强度下降.理论计算结果能较好地解释实验现像.在此基础上,进一步讨论了引起镜面起伏的多种原因,并提出了可能的解决方法. 相似文献
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