| 带隙法测定SiGe/Si材料的应变状态 |
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| 引用本文： | 成步文,姚飞,薛春来,张建国,李传波,毛容伟,左玉华,罗丽萍,王启明.带隙法测定SiGe/Si材料的应变状态[J].物理学报,2005,54(9):4350-4353. |
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| 作者姓名： | 成步文 姚飞 薛春来 张建国 李传波 毛容伟 左玉华 罗丽萍 王启明 |
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| 作者单位： | 中国科学院半导体研究所，北京 100083 |
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| 基金项目： | 国家高技术研究发展计划（批准号：2002AA312010）,国家重点基础研究发展规划（批准号：G2000036603）和国家自然科学基金（批准号：60336010）资助的课题. |
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| 摘 要： | 从固体模型理论的结果出发，计算了生长于Si（100）衬底上x值小于085的Si1-xGex合金材料（能带结构为类Si结构）的间接带隙与应变的关系，结 果表明，应变的S iGe材料的带隙和完全弛豫状态下材料的带隙之差与应变呈线性关系.基于这一结果，提出了 用测量带隙来间接测定SiGe/Si应变状态的方法.用带隙法和x射线双晶衍射法测量了不同应 变状态下的SiGe/Si多量子阱材料的应变弛豫度，两者可以较好的符合，表明带隙法测量SiG e应变弛豫度是可行的.
关键词：
SiGe合金
应变
带隙
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| 关 键 词： | SiGe合金 应变 带隙 |
| 文章编号： | 1000-3290/2005/54(09)/4350-04 |
| 收稿时间： | 12 19 2004 12:00AM |
| 修稿时间： | 2004-12-192005-02-23 |
A method to estimate the strain state of SiGe/Si by measuring the bandgap |
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| CHENG Bu-wen,YAO Fei,Xue Chun-Lai,Zhang Jian-Guo,Li Chuan-Bo,Mao Rong-Wei,Zuo Yu-Hua,LUO Li-ping,Wang Qi-Ming.A method to estimate the strain state of SiGe/Si by measuring the bandgap[J].Acta Physica Sinica,2005,54(9):4350-4353. |
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| Authors: | CHENG Bu-wen YAO Fei Xue Chun-Lai Zhang Jian-Guo Li Chuan-Bo Mao Rong-Wei Zuo Yu-Hua LUO Li-ping Wang Qi-Ming |
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| Abstract: | Using the result of model-solid theory,we have obtained the relationship between bandgap and strain of Si- 1-x Ge-x alloy on Si(100) substrate with x<0.85. It was shown that the deviation between the bandgap of strained SiGe and relaxed SiGe is proportional to the strain. According to the theoretical result, a novel method was suggested to determine the strain state of SiGe/Si through measuring the bandgap. The strain in the SiGe/Si multi-quantum wells was measured using the new method and the results had good agreement with that from XRD measurement. |
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| Keywords: | SiGe alloy strain bandgap |
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