单载流子传输的双异质结光敏晶体管探测器的研究

基于器件仿真器Atlas, 建立了InP/InGaAsP单向载流子传输的双异质结光敏晶体管(UTC-DHPT)的二维模型, 分析讨论了器件性能与外延结构参数的关系. 设计出同时具有高响应度(≥17.93 A/W)和高特征频率(≥121.68 GHz)的UTC-DHPT, 缓解了传统的异质结光敏晶体管光电探测器中探测效率和工作速度的矛盾. 关键词： 单向载流子 光敏晶体管 电流放大倍数 响应度     

Investigation of chlorine-based etchants in wet and dry etching technology for an InP planar Gunn diode

Mesa etching technology is considerably important in the Gunn diode fabrication process. In this paper we fabricate InP Gunn diodes with two different kinds of chlorine-based etchants for the mesa etching for comparative study. We use two chlorine-based etchants, one is HCl-based solution (HCl/H 3 PO 4 ), and the other is Cl 2 -based gas mixture by utilizing inductively coupled plasma system (ICP). The results show that the wet etching (HCl-based) offers low cost and approximately vertical sidewall, whilst ICP system (Cl 2 -based) offers an excellent and uniform vertical sidewall, and the over-etching is tiny on the top and the bottom of mesa. And the fabricated mesas of Gunn diodes have average etching rates of ～ 0.6 μm/min and ～ 1.2 μm/min, respectively. The measured data show that the current of Gunn diode by wet etching is lower than that by ICP, and the former has a higher threshold voltage. It provides a low-cost and reliable method which is potentially applied to the fabrication of chip terahertz sources.     

Optimization of the UTC-PD Epitaxy for Photomixing at 340?GHz

We present a method to optimize the epitaxial layer structure of an InGaAs/InP uni-traveling-carrier photo-diode (UTC-PD) for continuous THz-wave generation. The design approach used is general in that it can be applied for any target frequency while this study focuses on 340 GHz. The photodiode epitaxy is modeled and optimized using a TCAD software implementing the hydrodynamic semiconductor equations. This physical device model was found to be in good agreement with reported experimental results. It is shown that the UTC-PD can generate ~1 mW at 340 GHz by choosing the optimum absorption layer and collection layer thicknesses.     

Study on the saturation characteristics of high-speed uni-traveling-carrier photodiodes based on field screening analysis

A back-illuminated mesa-structure InGaAs/InP charge-compensated uni-traveling-carrier(UTC) photodiode(PD) is fabricated,and its saturation characteristics are investigated.The responsivity of the 40-μmdiameter PD is as high as 0.83 A/W,and the direct current(DC) saturation current is up to 275 mA.The 1-dB compression point at the 3-dB cutoff frequency of 9 GHz is measured to be 100 mA,corresponding to an output radio frequency(RF) power of up to 20.1 dBm.According to the calculated electric field distributions in the depleted region under both DC and alternating current(AC) conditions,the saturation of the UTC-PD is caused by complete field screening at high optical injection levels.     

100-nm T-gate InAIAs/InGaAs InP-based HEMTs with fT= 249 GHz and fmax ： 415 GHz

InA1As/InGaAs high electron mobility transistors （HEMTs） on an InP substrate with well-balanced cutoff frequency fT and maximum oscillation frequency frnax are reported. An InA1As/InGaAs HEMT with 100-nm gate length and gate width of 2 × 50 μm shows excellent DC characteristics, including full channel current of 724 mA/mm, extrinsic maximum transconductance gm.max of 1051 mS/mm, and drain-gate breakdown voltage BVDG of 5.92 V. In addition, this device exhibits fT = 249 GHz and fmax = 415 GHz. These results were obtained by fabricating an asymmetrically recessed gate and minimizing the parasitic resistances. The specific Ohmic contact resistance was reduced to 0.031 0.mm. Moreover, the fT obtained in this work is the highest ever reported in 100-nm gate length InA1As/InGaAs InP-based HEMTs. The outstanding gm.max, fT, fmax, and good BVDG make the device suitable for applications in low noise amplifiers, power amplifiers, and high speed circuits.     

高速高饱和单行载流子光探测器的设计与分析

设计了一种In P基的背入射台面结构的单行载流子光探测器.通过在吸收层中采取高斯型掺杂界面及引入合适厚度和掺杂浓度的崖层,使得光探测器同时具备了高速和高饱和电流特性.理论分析表明,在光敏面为14μm2、反向偏压为2 V条件下,该器件的3 d B带宽可达58 GHz,直流饱和电流高达158 m A.在大功率光注入条件下,详细分析了光探测器带宽降低和电流饱和现象,得出能带偏移和电场坍塌是其根本原因的结论.     

Mechanism of defect evolution in H+ and He+ implanted InP

The defect evolution in InP with the 75 keV H⁺ and 115 keV He⁺ implantation at room temperature after subsequent annealing has been investigated in detail. With the same ion implantation fluence, the He⁺ implantation caused much broader damage distribution accompanied by much higher out-of-plane strain with respect to the H⁺ implanted InP. After annealing, the H⁺ implanted InP did not show any blistering or exfoliation on the surface even at the high fluence and the H₂ molecules were stored in the heterogeneously oriented platelet defects. However, the He molecules were stored into the large bubbles which relaxed toward the free surface, creating blisters at the high fluence.     

Growth mode and effect of carrier gas on In0.53Ga0.47As/InP surface morphology grown with trimethylarsine and arsine

Different growth mode have been observed for InGaAs/InP grown with trimethylarsine and arsine by Metalorganic Vapor Phase Epitaxy (MOVPE) when changing the carrier gas. The surface has been investigated by Atomic Force Microscope (AFM) for epilayers grown at 600°C under pure hydrogen or a mixture of hydrogen and nitrogen as carrier gas. The step/terrace surface morphology was observed for InP/InP and InGaAs/InP (001) using 0.2° off substrates. InP epilayers grown under nitrogen flow show step-bunched terraces as large as 170 nm. The effect of the group V source for InGaAs/InP has been studied. It is shown that the step edge characteristic of step flow growth appears for lattice-matched InGaAs/InP grown with arsine. When using TMAs and hydrogen as a carrier gas, the growth mode and surface roughness depends greatly on V/III ratio and growth temperature. Under nitrogen flow with the combination of TMI+TMG+TMAs, pit-like defects (5–8 nm deep) are visible at high surface concentration (10⁹–10¹⁰/cm²). When increasing V/III ratio, 3D growth occurs simultaneously with pit-like defects, recovering the whole surface of the sample. Various surface morphology characteristics of InGaAs epilayers assessed by AFM characterisation will be presented and discussed.     

Study of the photoexcited carrier dynamics in InP:Fe using time-resolved reflection and photoluminescence spectra

The photoexcited carrier dynamics and photoluminescence of the undoped InP and Fe implanted InP was studied by time-resolved reflection and photoluminescence spectra. The decay times of reflection recovery and the radiative recombination for Fe implanted InP are shorter than those of undoped InP. Considering the surface recombination, a model was developed to simulate the reflection recovery dynamics, it agrees with the experimental results very well. Moreover, we obtained the ambipolar diffusion coefficient and the surface recombination velocity by using the model. For Fe-doped InP, the surface recombination velocity is much larger than that for the undoped InP, which is probably due to Fe^2+/3+ trapping centers and the large surface band bending. The PL decay time for Fe implanted InP is shorter than that for undoped InP, which is ascribed to the capture centers introduced by metallic precipitates.     

EPR measurement on Er-doped InP grown by organometallic vapor phase epitaxy

We have performed X-band ESR measurements on InP:Er epitaxial layers grown by organometallic vapor phase epitaxy, which were grown at the substrate temperatures of 530°C (sample A) and 580°C (sample B). Sample A shows a slightly anisotropic resonance aroundg = 6 with hyperfine structure due to the¹⁶⁷Er (I = 7/2) isotope at 3 K. This result is similar to the result for Erdoped bulk InP and it indicates that Er³⁺ ions are located in In tetrahedral sites. On the other hand, we do not see such a resonance for sample B, suggesting that the local symmetry of Er in sample B is different from sample A. The difference between samples A and B is consistent with the fluorescence-detected extended X-ray absorption fine structure results that the coordination number of Er depends on the growth temperature.     

光吸收法检测GaxIn1-xAsyP1-y/InP双异质结液相外延片的室温禁带宽度

用双光束分光光度计测定了GaxIn1-xAsyP1-y/InP双异质结外延片中四元层的禁带宽度,并和制得的发光管发射波长及计算值进行比较。部分样品用电子探针阴极荧光法对照。说明光吸收法简便、迅速、可靠。可对液相外延质量提供一定的评价。     

Dielectrics for passivation of planar InP/InGaAs diodes

We have investigated dielectrics for passivating planar InP or InGaAs photodiodes: thermally evaporated Al₂O₃ and SiO, sputtered Si₃N₄ and SiO₂ and also SiO₂ using chemical vapour deposition. The measured bulk and field-effect properties of all dielectrics excluding sputtered SiO₂ were suitable for this application. In planar InGaAs diodes with Cd diffused or Mg implanted p⁺-region a disordered dielectric/semiconductor surface led to high reverse current densities above 1 mA/cm². In InP diodes with p⁺-diffusion and dielectrics exhibiting positive flatband voltages, e.g. Si₃N₄ and Al₂O₃, reverse current densities of 10 μA/cm² were measured probably caused by a slight inversion of the semiconductor surface. With a SiO or CVD-SiO₂ passivating layer on n-InP lowest leakage current densities (10 nA/cm²) were achieved. Very low dark-current planar photodiodes InP/InGaAsP/InGaAs have been fabricated using SiO passivation (30 nA/cm²).     

Dissociation effects of H and H2 on clean III–V compounds

Excited hydrogen, whether atomic or ionised, chemisorbs to the clean surfaces of III–V compounds (GaAs, InP) up to the monolayer coverage range roughly. Beyond this initial chemisorption stage, the further interaction of excited hydrogen dissociates the substrate and leads to the formation of (i) the metal from the group III element, and (ii) one (or more) hydrogenated species of the group V element, which may remain adsorbed. The stability of the latter species as a function of temperature depends on the chemical nature of the substrate and its orientation. Experimental evidences of this dissociation are drawn from various techniques, and examples are given for H/GaAs(1 1 0), H/InP(1 1 0), H⁺₂/(GaAs(1 1 0) and H/InP(1 1 0). Properties of the systems specific of the dissociation stage are presented.     

Preparation of Highly Stable and Photoluminescent Cadmium-Free InP/GaP/ZnS Core/Shell Quantum Dots and Application to Quantitative Immunoassay

Indium phosphide (InP) quantum dots (QDs) are ideal substitutes for widely used cadmium-based QDs and have great application prospects in biological fields due to their environmentally benign properties and human safety. However, the synthesis of InP core/shell QDs with biocompatibility, high quantum yield (QY), uniform particle size, and high stability is still a challenging subject. Herein, high quality (QY up to 72%) thick shell InP/GaP/ZnS core/shell QDs (12.8 ± 1.4 nm) are synthesized using multiple injections of shell precursor and extension of shell growth time, with GaP serving as the intermediate layer and 1-octanethiol acting as the new S source. The thick shell InP/GaP/ZnS core/shell QDs still keep high QY and photostability after transfer into water. InP/GaP/ZnS core/shell QDs as fluorescence labels to establish QD-based fluorescence-linked immunosorbent assay (QD-FLISA) for quantitative detection of C-reactive protein (CRP), and a calibration curve is established between fluorescence intensity and CRP concentrations (range: 1–800 ng mL⁻¹, correlation coefficient: R² = 0.9992). The limit of detection is 2.9 ng mL⁻¹, which increases twofold compared to previously reported cadmium-free QD-based immunoassays. Thus, InP/GaP/ZnS core/shell QDs as a great promise fluorescence labeling material, provide a new route for cadmium-free sensitive and specific immunoassays in biomedical fields.     

Piezoelectric constant and conductivity relaxation in n-type InP from ultrasonic attenuation measurements

Measurements have been made of the attenuation of 30, 90 and 150 MHz {111}; longitudinal ultrasonic waves and of the d.c. resistivity in chromium-doped, n-type InP from -50 to +150°C. From the attenuation maximum observed for 30 MHz waves we find γe₁₄γ = 0.040 C/m².     

Absorption spectra of some radiation-doped A<Subscript>3</Subscript>B<Subscript>5</Subscript> compounds

Temperature dependences of the absorption coefficient in A₃B₅ crystals before and after irradiation by electrons with an energy of 6 MeV and a dose of Ф = 2 × 10¹⁷ electron/cm² are studied. A low-lying E_v + 0.4 eV center of a nonimpurity origin is found in both undoped GaAs crystals and those doped with various impurities (Te, Zn, Sn, Ga_1–xIn_xAs, InP, and InP〈Fe〉).     

Fabrication of highly luminescent InP/Cd and InP/CdS quantum dots

Highly luminescent InP/Cd and InP/CdS core-shell QDs were fabricated by sequential addition of cadmium acetylacetonate and dodecanethiol to InP core solutions, which showed a red-shift in absorption and emission. ICP measurement revealed the existence of cadmium and TEM images showed the increased size of InP/CdS QDs. PXRD data identified zinc blend structures of InP and InP/CdS QDs, which indexed to the (1 1 1), (2 2 0) and (3 1 1) planes. The slight shift of peaks between InP and InP/CdS QDs can demonstrate the existence of CdS shell structures.     

InGaAsP/InP evanescent mode waveguide optical isolators and their application to InGaAsP/InP/Si hybrid evanescent optical isolators

We theoretically investigated InGaAsP/InP evanescent mode waveguide optical isolators and proposed their application to InGaAsP/InP/Si hybrid evanescent optical isolators. InGaAsP/InP evanescent optical isolators are composed of semiconductor optical amplifier (SOA) waveguides having InGaAsP multiple quantum well (MQW) active layer and upper InGaAsP waveguide layer with ferromagnetic layer. Optical isolation is obtained for evanescent optical mode in the InGaAsP waveguide layer. InGaAsP/InP/Si hybrid evanescent optical isolators are theoretically proposed based on the idea of InGaAsP/InP evanescent optical isolators. InGaAsP/InP/Si hybrid evanescent optical isolators are composed of ferromagnetic metal loaded silicon evanescent waveguides with wafer-bonded InGaAsP/InP optical gain material. The optical isolation and propagation loss are discussed with the structure of silicon evanescent waveguides, and optical isolation of 8.0 dB/mm was estimated. The concept of semiconductor evanescent mode optical isolators is feasible with InP based photonic integrated circuits and advanced silicon photonics.     

Raman study of V/III flux ratio effect in InP/InAlAs/InP heterostructures grown by MOCVD

Micro‐Raman measurements have been carried out in order to study the V/III flux ratio effect in InP/InAlAs/InP heterostructures grown by metal‐organic chemical vapor deposition (MOCVD). Photoluminescence (PL) studies in InP/InAlAs/InP heterostructures [1] , [2] show a strong dependence of the PL band linewidth on V/III molar ratio. In addition to the observation of the two‐mode behavior and the disorder activated modes in InAlAs alloy, an analysis of Raman spectra shows a line shape broadening and wavenumber shift of Raman peaks for various V/III molar ratios, with minimum linewidth and lattice mismatch occurring at V/III = 50. Also, a strong dependence on the composition modulation of the AlAs‐like longitudinal optic (LO_AlAs−like) phonon was observed due to clustering. Calculation of the in‐plane strain shows that the lattice mismatch between the epilayer and the substrate is relatively insensitive to flux ratio variation within the range investigated. Therefore, the high arsenic overpressures used have an insignificant adverse effect on the quality of the hetero‐interfaces. Copyright © 2009 John Wiley & Sons, Ltd.     

Electronic properties and tunability in graphene/3D-InP mixed-dimensional van der Waals heterostructure

InP solar cell is promising for space application due to its strong space radiation resistance and high power conversion efficient (PCE). Graphene/InP heterostructure solar cell is expected to have a higher PCE because strong near-infrared light can also be absorbed and converted additionally by graphene in this heterostructure. However, a low PCE was reported experimentally for Graphene/InP heterostructures. In this paper, electronic properties of graphene/InP heterostructures are calculated using density functional theory to understand the origin of the low PCE and propose possible improving ways. Our calculation results reveal that graphene contact with InP form a p-type Schottky heterostructure with a low Schottky barrier height (SBH). It is the low SBH that leads to the low PCE of graphene/InP heterostructure solar cells. A new heterostructure, graphene/insulating layer/InP solar cells, is proposed to raise SBH and PCE. Moreover, we also find that the opened bandgap of graphene and SBH in graphene/InP heterostructures can be tuned by exerting an electric field, which is useful for photodetector of graphene/InP heterostructures.