| Effects of high temperature rapid thermal annealing on Ge films grown on Si（001） substrate |
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| 引用本文： | 刘智,成步文,李亚明,李传波,薛春来,王启明.Effects of high temperature rapid thermal annealing on Ge films grown on Si（001） substrate[J].中国物理 B,2013(11):463-466. |
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| 作者姓名： | 刘智 成步文 李亚明 李传波 薛春来 王启明 |
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| 作者单位： | State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| 基金项目： | Project supported by the National Basic Research Program of China （Grant No. 2013CB632103） and the National Natural Science Foundation of China （Grant Nos. 61036003, 61176013, and 61177038）. |
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| 摘 要： | Tensile strain,crystal quality,and surface morphology of 500 nm thick Ge films were improved after rapid thermal annealing at 900 C for a short period(20 s).The films were grown on Si(001)substrates by ultra-high vacuum chemical vapor deposition.These improvements are attributed to relaxation and defect annihilation in the Ge films.However,after prolonged(20 s)rapid thermal annealing,tensile strain and crystal quality degenerated.This phenomenon results from intensive Si–Ge mixing at high temperature.
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| 关 键 词： | Ge film rapid thermal annealing tensile strain Si–Ge mixing |
Effects of high temperature rapid thermal annealing on Ge films grown on Si（001） substrate |
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| Liu Zhi,Cheng Bu-Wen,Li Ya-Ming,Li Chuan-Bo,Xue Chun-Lai,Wang Qi-Ming.Effects of high temperature rapid thermal annealing on Ge films grown on Si（001） substrate[J].Chinese Physics B,2013(11):463-466. |
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| Authors: | Liu Zhi Cheng Bu-Wen Li Ya-Ming Li Chuan-Bo Xue Chun-Lai Wang Qi-Ming |
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| Affiliation: | (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China) |
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| Abstract: | Ge film, rapid thermal annealing, tensile strain, Si-Ge mixing |
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| Keywords: | Ge film rapid thermal annealing tensile strain Si-Ge mixing |
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