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采用对靶磁控溅射方法在P型晶体硅(c—Si)衬底上沉积n型富硅氮化硅(SiNx)薄膜,形成了富硅SiNx/c—Si异质结.异质结器件呈现出较高的整流比,在室温下当V=4-2V时为1.3×10^3.在正向偏压下温度依赖的J—V特性曲线可以分为三个明显不同的区域.在低偏压区载流子的输运满足欧姆传输机理,在中间偏压区的电流是由载流子的隧穿过程和复合过程共同决定的,在较高偏压区的电输运以具有指数陷阱分布的空间电荷限制电流(SCLC)传输机理为主. 相似文献
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以SiH4与H2作为前驱气体,采用射频等离子增强化学气相沉积技术制备了纳米晶硅薄膜.利用Raman散射和红外吸收光谱等技术,对不同氢稀释比条件下薄膜的微观结构和键合特性进行了研究.结果表明,随着氢稀释比增加,薄膜的晶化率明显提高,而氢稀释比过高时,薄膜晶化率呈现减少趋势.红外吸收光谱分析表明,纳米晶硅薄膜中氢的键合模式与薄膜的晶化特性密切相关.随着氢稀释比增加,薄膜中整体氢含量和SiH2键合密度明显减少,而在高氢稀释比条件下,氢稀释比增加导致薄膜中SiH2键合密度和整体氢含量增加. 相似文献
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High temperature thermoelectric properties of highly c-axis oriented Bi2Sr2Co2Oy thin films fabricated by pulsed laser deposition 下载免费PDF全文
High-temperature thermoelectric transport property measurements have been performed on the highly c-axis oriented Bi2Sr2Co20v thin films prepared by pulsed laser deposition on LaA1Oa (001). Both the electric resistivity p and the seebeck coefficient S of the film exhibit an increasing trend with the temperature from 300 K-1000 K and reach up to 4.8 m. cm and 202 V/K at 980 K, resulting in a power factor of 0.85 mW/mK which are comparable to those of the single crystalline samples. A small polaron hopping conduction can be responsible for the conduction mechanism of the film at high temperature. The results demonstrate that the Bi2Sr2Co2Oy thin film has potential application has high temperature thin film thermoelectric devices, 相似文献
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High temperature thermoelectric properties of highly c-axis oriented Bi<sub>2</sub>Sr<sub>2</sub>Co<sub>2</sub>O<sub>y</sub> thin films fabricated by pulsed laser deposition 下载免费PDF全文
High-temperature thermoelectric transport property measurements have been performed on the highly c-axis oriented Bi2Sr2Co2Oy thin films prepared by pulsed laser deposition on LaAlO3(001).Both the electric resistivity ρ and the seebeck coefficient S of the film exhibit an increasing trend with the temperature from 300 K-1000 K and reach up to 4.8 m·Ω· cm and 202 μV/K at 980 K,resulting in a power factor of 0.85 mW/mK which are comparable to those of the single crystalline samples.A small polaron hopping conduction can be responsible for the conduction mechanism of the film at high temperature.The results demonstrate that the Bi2Sr2Co2Oy thin film has potential application in high temperature thin film thermoelectric devices. 相似文献
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以SiH4与H2作为前驱气体,采用射频等离子增强化学气相沉积技术制备了纳米晶硅薄膜.利用Raman散射和红外吸收光谱等技术,对不同氢稀释比条件下薄膜的微观结构和键合特性进行了研究.结果表明,随着氢稀释比增加,薄膜的晶化率明显提高,而氢稀释比过高时,薄膜晶化率呈现减少趋势.红外吸收光谱分析表明,纳米晶硅薄膜中氢的键合模式与薄膜的晶化特性密切相关.随着氢稀释比增加,薄膜中整体氢含量和SiH2键合密度明显减少,而在高氢稀释比条件下,氢稀释比增加导致薄膜中SiH2键合密度和整体氢含量增加. 相似文献
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Analysis of the generation mechanism of the S-shaped J—V curves of MoS2/Si-based solar cells 下载免费PDF全文
Amorphous-microcrystalline MoS$_{2}$ thin films are fabricated using the sol-gel method to produce MoS$_{2}$/Si-based solar cells. The generation mechanisms of the S-shaped current density-voltage ($J$-$V$) curves of the solar cells are analyzed. To improve the performance of the solar cells and address the problem of the S-shaped $J$-$V$ curve, a MoS$_{2}$ film and a p$^+$ layer are introduced into the front and back interfaces of the solar cell, respectively, which leads to the formation of a p-n junction between the p-Si and the MoS$_{2}$ film as well as ohmic contacts between the MoS$_{2}$ film and the ITO, improving the S-shaped $J$-$V$ curve. As a result of the high doping characteristics and the high work function of the p$^+$ layer, a high-low junction is formed between the p$^+$ and p layers along with ohmic contacts between the p$^+$ layer and the Ag electrode. Consequently, the S-shaped $J$-$V$ curve is eliminated, and a significantly higher current density is achieved at a high voltage. The device exhibits ideal p-n junction rectification characteristics and achieves a high power-conversion efficiency (CE) of 7.55%. The findings of this study may improve the application of MoS$_{2}$ thin films in silicon-based solar cells, which are expected to be widely used in various silicon-based electronic and optical devices. 相似文献
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本工作采用光学发射谱方法测量了TEA CO2脉冲激光辐射SiH4+CH4系统产生的等离子体反应过程中的发射谱特性,探测到了Si,Si^+,Si^2+,C,C^+,C^2+,CH,SiH,SiH^+,Si2和H的特征辐射,研究了含C,Si碎片粒子光谱随实验条件的变化规律,并讨论了反应条件对OES的影响。 相似文献
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采用光学-光学双共振多光子离化(Optical-optical double-resonant multiphoton ionization,简称OODR-MPI)技术详细研究了NO2分子里德堡态的能级结构。结果显示,用不同强度的激光作抽运光,尽管NO2分子的OODR-MPI谱均由规则的光谱序列组成,但NO2分子的离化通道存在很大区别,当抽运光强度较高时,NO2分子通过(3+1+1)双共振多光子过程离化;而当抽运光强度较低时,NO2分子通过(1+2+1)双共振多光子过程离化,两种离化机制的最终共振能级属于不同的里德堡态。 相似文献