机械磨抛对CdZnTe薄膜阻变特性的影响

采用磁控溅射法在ITO玻璃上制备了CdZnTe薄膜,探究机械磨抛对CdZnTe薄膜阻变特性的影响。通过对XRD图谱、Raman光谱、AFM显微照片等实验结果分析阐明了机械磨抛影响CdZnTe薄膜阻变特性的物理机制。研究结果表明,磁控溅射制备的薄膜为闪锌矿结构,F43m空间群。机械磨抛提高了CdZnTe薄膜的结晶质量;CdZnTe薄膜粗糙度(Ra)由磨抛前的3.42 nm下降至磨抛后的1.73 nm;磨抛后CdZnTe薄膜透过率和162 cm^-1处的类CdTe声子峰振动峰增强;CdZnTe薄膜的阻变开关比由磨抛前的1.2增加到磨抛后的4.9。机械磨抛提高CdZnTe薄膜质量及阻变特性的原因可能是CdZnTe薄膜在磨抛过程中发生了再结晶。     

单层MXene纳米片Ti2N电磁特性的过渡金属(Sc、V、Zr)掺杂效应

二维材料MXene纳米片由于具有较大的比表面积和较高的电子迁移率而受到广泛的关注。本文采用基于密度泛函理论的第一性原理计算,对单层MXene纳米片Ti₂N电磁特性的过渡金属(Sc、V、Zr)掺杂效应进行了系统研究。结果表明,所有过渡金属掺杂体系结合能均为负值,结构均稳定;其中Ti₂N-Sc体系的形成能为-2.242 eV,结构更易形成,且保持稳定;掺杂后Ti₂N-Sc、Ti₂N-Zr体系磁矩增大;此外,Ti₂N-Sc体系中保留了较高的自旋极化率,达到84.9%,可预测该体系在自旋电子学中具有潜在的应用价值。     

MWCNTs/hydroxypropyl cellulose/polyethylene glycol-based shape-stabilized phase change materials

Journal of Thermal Analysis and Calorimetry - Polyethylene glycol (PEG) is widely used as phase change materials (PCMs). However, the leakage and low thermal conductivity issues restrict its...     

Correction to: Tuning working potential of silicon‑phosphorus anode via microstructure control for high‑energy lithium‑ion batteries

Journal of Solid State Electrochemistry -     

气相输运沉积制备c轴择优取向的碘化铋薄膜

铋基卤化物材料因其无毒和优良的光电性能而显示出巨大的应用潜力。BiI₃作为一种层状重金属半导体,已被用于X射线检测、γ射线检测和压力传感器等领域,最近其作为一种薄膜太阳能电池吸收材料备受关注。本文采用简单的气相输运沉积(VTD)法,以BiI₃晶体粉末作为蒸发源,在玻璃基底上得到高质量c轴择优取向的BiI₃薄膜。并通过研究蒸发源温度和沉积距离对薄膜物相和形貌的影响,分析了BiI₃薄膜择优生长的机理。结果表明VTD法制备的BiI₃薄膜属于三斜晶系,其光学带隙为~1.8 eV。沉积温度对薄膜的择优取向有较大影响,在沉积温度低于270 ℃时,沉积的薄膜具有沿c轴择优取向生长的特点,超过此温度,c轴择优取向生长消失。在衬底温度为250 ℃、沉积距离为15 cm时制备的薄膜结晶性能最好,晶体形貌为片状八面体。     

Fourier transforms on finite group actions and bent functions

Journal of Algebraic Combinatorics - Highly nonlinear functions (bent functions, perfect nonlinear functions, etc.) on finite fields and finite (abelian or nonabelian) groups have been studied in...     

A Delayed HIV Infection Model with the Homeostatic Proliferation of CD4+ T Cells

Acta Mathematicae Applicatae Sinica, English Series - In this paper, we investigate a delayed HIV infection model that considers the homeostatic proliferation of CD4+ T cells. The existence and...     

High-performance nonfused ring electron acceptor with a steric hindrance induced planar molecular backbone

Three nonfused ring electron acceptors (NFREAs) TTC6,TT-C8T and TT-TC8 were purposefully designed and synthesized.The molecular geometry can be adjusted by the steric hindrance of lateral substituents.According to the DFT calculations,from TTC6 to TT-C8T and TT-TC8,planarity of the molecular backbone is gradually improved,accompanying with the enhancing of intramolecular charge transfer effect.As for TT-TC8,the two phenyl substituents are almost perpendicular to the molecular backbone,which endues the acceptor with good solubility and suppresses it to form over-aggregation.Multidirectional regular molecular orientation and closer molecular stacking are formed in TT-TC8 film.As a result,TT-TC8 based devices afford the highest PCE of 13.13%,which is much higher than that of TTC6 (4.41%) and TT-C8T (10.42%) and among the highest PCE values based on NFREAs.     

Synthesis of yolk-shell Bi2O3@TiO2 submicrospheres with enhanced potassium storage

Science China Chemistry - Due to their enormous potential for large-scale energy storage, rechargeable potassium-ion batteries have been widely researched and developed. However, the drastic volume...