机械磨抛对CdZnTe薄膜阻变特性的影响

采用磁控溅射法在ITO玻璃上制备了CdZnTe薄膜,探究机械磨抛对CdZnTe薄膜阻变特性的影响。通过对XRD图谱、Raman光谱、AFM显微照片等实验结果分析阐明了机械磨抛影响CdZnTe薄膜阻变特性的物理机制。研究结果表明,磁控溅射制备的薄膜为闪锌矿结构,F43m空间群。机械磨抛提高了CdZnTe薄膜的结晶质量;CdZnTe薄膜粗糙度(Ra)由磨抛前的3.42 nm下降至磨抛后的1.73 nm;磨抛后CdZnTe薄膜透过率和162 cm^-1处的类CdTe声子峰振动峰增强;CdZnTe薄膜的阻变开关比由磨抛前的1.2增加到磨抛后的4.9。机械磨抛提高CdZnTe薄膜质量及阻变特性的原因可能是CdZnTe薄膜在磨抛过程中发生了再结晶。

Effect of Mechanical Grinding and Polishing on Resistive Switching Characteristics of CdZnTe Thin Films

CdZnTe thin films were prepared on ITO glass by magnetron sputtering method to explore the effect of mechanical grinding and polishing on the resistive switching characteristics of CdZnTe thin films. Through the analysis of experimental results such as XRD patterns, Raman spectroscopy, AFM micrograph, etc., the physical mechanism of mechanical grinding and polishing affecting the resistive switching characteristics of CdZnTe thin film was elucidated. The results show that the thin films prepared by magnetron sputtering are sphalerite structures with F43m space group. Mechanical grinding and polishing improves the crystallization quality of CdZnTe thin films; the roughness (Ra) of CdZnTe film decreases from 3.42 nm to 1.73 nm after grinding and polishing. Transmittance of CdZnTe thin film after grinding and polishing and the vibration peak of CdTe-like phonon peaks at 162 cm^-1 were enhanced. After grinding and polishing, the resistive switching ratio of CdZnTe thin film increases from 1.2 to 4.9. The reason why mechanical grinding and polishing improves the quality and resistive switching characteristics of CdZnTe thin films may be that CdZnTe thin films are recrystallize during the grinding process.