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铜锌锡硫薄膜材料组成元素储量丰富, 环境友好, 成本低廉, 成为最具前景的薄膜材料之一. 目前, Cu2ZnSn(S, Se)4 (CZTSSe)薄膜太阳电池的最高转换效率已经达到12.6%. 本文总结了Cu2ZnSnS4 (CZTS)的发展历史, 依次介绍了CZTS薄膜材料的结构特性、光学特性、电学特性、界面特性和Na对CZTS 薄膜的影响, 详细介绍了CZTS薄膜的制备方法及器件应用的最新研究进展, 总结了目前CZTS薄膜太阳电池发展中存在的问题, 展望了今后的研究方向. 相似文献
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CdS薄膜中"白斑"的研究 总被引:1,自引:1,他引:0
本论文对CdS薄膜中的"白斑"进行了研究.化学水浴沉积法(CBD)制备CdS薄膜所需要的化学反应物包括硫脲、氨水、镉盐和铵盐等.文中采用两种镉盐和铵盐来沉积CdS薄膜:氯化镉和氯化铵,乙酸镉和乙酸铵.所沉积的CdS薄膜的表观形貌由SEM表征,成分由EDX表征.当镉盐和铵盐分别采用氯化镉和氯化铵时,生成的薄膜中存在大量的"白斑".这些"白斑"的成分不是CdS,而是(CdCl)2S.增加氨水的浓度可以大大减少这些"白斑",但是不能彻底消除这些"白斑".当镉盐和铵盐分别采用乙酸镉和乙酸铵时,生成的薄膜均匀、平整,薄膜中根本就不存在所谓的"白斑".因此,沉积CdS薄膜时,镉盐和铵盐不宜采用氯化镉和氯化铵,应该采用乙酸镉和乙酸铵. 相似文献
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采用孪生ZnO (Al2 O3 ∶2 % )对靶直流磁控溅射制备高透过率、高电导率的平面ZnO薄膜 (迁移率为 5 .5 6cm2 /V·s,载流子浓度为 4 .5 7× 10 2 0 cm-3 ,电阻率为 2 .4 6× 10 -3 Ω·cm ,可见光范围 (380~ 80 0nm)平均透过率大于 85 % )。用酸腐蚀的方法 ,可以获得绒面效果 ,而反应气压对绒面效果没有影响 ,薄膜的电学特性没有变化 ,绒面对光散射作用增强 ,导致相对于平面ZnO薄膜的透过率要低一些 (可见光范围平均透过率大于 80 % )。 相似文献
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Composition dependence of quaternary CuIn1-x GaxSe2 films on Ga content has been systematically investigated by Raman scattering. The dominant A1 mode shifts from 174cm^-1 for CuInSe2 to 185cm^-1 for CuGaSe2 in an approximately polynomial curve other than a linear curve, indicating existence of asymmetric distribution of Ga and In on a microscopic scale in films. With Ga content x 〉 0.3, the significantly broadening and intensity decrease of A1 modes suggest the degradation of crystalline quality of chalcopyrite phase. Additionally, the quenching of additional Raman band at 183cm^-1 for the Ga-rich films reveals that CuAu-ordered phase can coexist in nominal chalcopyrite CuInSe2 films but not in CuGaSe2, due to Ga inhibition effect. 相似文献
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The effect of composition on structural and electronic properties in polycrystalline CuGaSe2 thin film 下载免费PDF全文
Polycrystalline CuGaSe2 thin films on Mo-coated soda-lime glass substrates have been synthesized by coevaporation process from Cu, Ga and Se sources. Structural and electrical properties of the as-grown CuGaSe2 films strongly depend on the film composition. Stoichiometric CuGaSe2 is fabricated, as indicated by x-ray diffraction spectroscope (XRD) and x-ray fluorescence (XRF). A two-phase region is composed of CuGaSe2 and Cu2-xSe phases for Cu-rich films, and CuGaSe2 and CuGa3Se5 phases for Ga-rich films, respectively. Morphological properties are detected by scanning electron microscope (SEM) for various compositional films, the grain sizes of the CuGaSe2films decrease with the extent of deviation from stoichiometric composition. Raman spectroscopy of Cu-rich samples shows that there exist large Cu-Se particles on the film surface. The results from Hall effect measurements for typical samples indicate that CuGaSe2 films are always of p-type semiconductor from Cu-rich to Ga-rich. Stoichiometric CuGaSe2 films exhibit relatively large mobility than any other compositional films. Finally, polycrystalline CuGaSe2 thin film solar cell with a best conversion efficiency of 6.02% has been achieved under the standard air mass (AM)1.5 spectrum for 100mW/cm^2 at room temperature (aperture area, 0.24cm^2). The open circuit voltage of the CuGaSe2 solar cells is close to770 mV. 相似文献
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Composition-induced structural modifications in the quaternary CuIn1-xGaxSe2 thin films: bond properties versus Ga content 下载免费PDF全文
In this paper the dependence of structural properties of the quaternary CuIn1-xGaxSe2 films with tetragonal structure on the Ga content has been systematically investigated by Raman scattering and x-ray diffraction spectra. The shift of the dominant A1 mode, unlike the lattice constants, does not follow the linear Vegard law with increasing Ga content x, whereas exhibits approximately polynomial change from 174 cm^-1 for CuInSe2 to 185 cm^-1 for CuGaSe2. Such behaviour should be indicative of presence of the asymmetric distribution of Ga and In on a microscopic scale in the films, due to Ga addition. The changes in the tetragonal distortion η lead to a significant variation in the anion displacement parameter U, which should be responsible for the evolution of bond parameters and resultant Raman bands with x. 相似文献
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