| Composition-induced structural modifications in the quaternary CuIn1-xGaxSe2 thin films： bond properties versus Ga content |
| |
| 引用本文： | 徐传明,孙云,李凤岩,张力,薛玉明,何青,刘洪图.Composition-induced structural modifications in the quaternary CuIn1-xGaxSe2 thin films： bond properties versus Ga content[J].中国物理 B,2007,16(3):788-794. |
| |
| 作者姓名： | 徐传明 孙云 李凤岩 张力 薛玉明 何青 刘洪图 |
| |
| 作者单位： | Institute of Photoelectronics, Nankai University, Tianjin 300071, China;Institute of Photoelectronics, Nankai University, Tianjin 300071, China;Institute of Photoelectronics, Nankai University, Tianjin 300071, China;Institute of Photoelectronics, Nankai University, Tianjin 300071, China;Institute of Photoelectronics, Nankai University, Tianjin 300071, China;Institute of Photoelectronics, Nankai University, Tianjin 300071, China;Department of Physics, University of Science and Technology of China, Hefei 230026, China |
| |
| 基金项目： | Project supported by China Postdoctoral Science Foundation (Grant No 2005037539), and the National High-Tech Research and Development Programm of China (Grant No 2004AA513020). |
| |
| 摘 要： | In this paper the dependence of structural properties of the quaternary CuIn1-xGaxSe2 films with tetragonal structure on the Ga content has been systematically investigated by Raman scattering and x-ray diffraction spectra. The shift of the dominant A1 mode, unlike the lattice constants, does not follow the linear Vegard law with increasing Ga content x, whereas exhibits approximately polynomial change from 174 cm^-1 for CuInSe2 to 185 cm^-1 for CuGaSe2. Such behaviour should be indicative of presence of the asymmetric distribution of Ga and In on a microscopic scale in the films, due to Ga addition. The changes in the tetragonal distortion η lead to a significant variation in the anion displacement parameter U, which should be responsible for the evolution of bond parameters and resultant Raman bands with x.
|
| 关 键 词： | 四元系CuIn1-xGaxSe2薄膜 成分 结构修饰 键合性质 镓含量 黄铜矿 |
| 收稿时间： | 2006-01-23 |
| 修稿时间： | 2006-01-232006-07-10 |
Composition-induced structural modifications in the quaternary CuIn1-xGaxSe2 thin films:bond properties versus Ga content |
| |
| Xu Chuan-Ming,Sun Yun,Li Feng-Yan,Zhang Li,Xue Yu-Ming,He Qing and Liu Hong-Tu.Composition-induced structural modifications in the quaternary CuIn1-xGaxSe2 thin films:bond properties versus Ga content[J].Chinese Physics B,2007,16(3):788-794. |
| |
| Authors: | Xu Chuan-Ming Sun Yun Li Feng-Yan Zhang Li Xue Yu-Ming He Qing and Liu Hong-Tu |
| |
| Institution: | 1.Institute of Photoelectronics, Nankai University, Tianfin 300071, China ;2. Department of Physics, University of Science and Technology of China, Hefei 230026, China |
| |
| Abstract: | In this paper the dependence of structural properties of the
quaternary CuIn1-xGaxSe2 films with tetragonal
structure on the Ga content has been systematically investigated
by Raman scattering and x-ray diffraction spectra. The shift of
the dominant Ax mode, unlike the lattice constants, does
not follow the linear Vegard law with increasing Ga content x,
whereas exhibits approximately polynomial change from
174\,cm-1 for CuInSe2 to 185cm-1 for
CuGaSe2. Such behaviour should be indicative of presence of
the asymmetric distribution of Ga and In on a microscopic scale
in the films, due to Ga addition. The changes in the tetragonal
distortion \eta lead to a significant variation in the anion
displacement parameter U, which should be responsible for the
evolution of bond parameters and resultant Raman bands with x. |
| |
| Keywords: | chalcopyrite compounds CuIn1-xGaxSe2 films anion displacement Raman scattering |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
| 点击此处可从《中国物理 B》下载免费的PDF全文 |
|
