光波导材料与制备

TN252 2004064287 在硅片上沉积厚二氧化硅的火焰水解法研究=Research on the deposition of thick silica on silicon substrate by flame hydrolysis deposition[刊,中]/郜定山(中科院半导体所光电子研究发展中心.北京(100083)),李建光…∥光学学报.—2004,24(9).—1279-1282 用火焰水解和高温烧结的方法在单晶硅基片上制备了厚SiO_2和B_2O_3-P_2O_5-SiO_2光波导包层材料。并用扫描电镜(SEM)和X射线粉末衍射(XRD)方法对其微观形貌和物相结构进行了观察和检测。重点对硅基片上沉积厚SiO_2时的龟裂和析晶问题进行了深入研究。从扫描电镜照片可以看出,火焰水解法形成的SiO_2粉末呈多孔的蜂窝状结构。这种粉末具有很高的比表面积,因而很容易烧结成玻璃。X射线衍射图谱表明,这种粉末是完全非     

K2O-ZnO-Al2O3-B2O3-SiO2系掺Cr3+透明莫来石微晶玻璃的研究

采用了X射线衍射、透射电镜和吸收光谱及荧光光谱技术研究了K2O－ZnO-Al2O3-B2O3－SiO2系掺Cr^3 玻璃的析晶性能和光谱。研究结果表明：在K2O－Al2O3-B2O3-SiO2系掺Cr^3 玻璃的基础上引入ZnO后，析晶性能明显改善；析晶温度降低，析出的纳米莫来石微晶均匀、规则；微晶玻璃的发光强度明显增强。     

光热敏折变玻璃及其布拉格体光栅特性研究

采用高温二次化料的方法制备了一种SiO2-Al2O3-ZnO-Na2O(F、Br)玻璃体系的光热敏折变(PTR)玻璃,通过紫外曝光、透射率光谱、X射线衍射(XRD)和差热分析等方法研究了其光热敏析晶机理。研究表明,PTR玻璃的光敏区为280～350nm,工作区为400～2700nm,最佳成核温度和析晶温度分别为490℃和595℃,析晶组分为NaF晶体。采用双光束干涉方法与"两步法"的热处理工艺在PTR玻璃中制备了周期为1000mm-1的布拉格体光栅,光栅的相对衍射效率达到91%,并验证了制备的布拉格体光栅具有角选择滤波能力。     

火焰水解淀积Si02膜的退火研究

本文采用火焰水解法在Si衬底上淀积了用于光波导下包层材料的SiO2膜，然后将其放入高温炉在空气中进行不同温度的退火处理。我们利用原子力量微镜（AFM）、X射线光电子能谱（XPS），X射线衍射仪（XRD）及可变入射角椭圆偏振仪（VASE）对SiO2膜进行了测试分析。当退火温度达到1400℃时，SiO2膜致密均匀，适合用作波导的下包层。     

磷酸盐玻璃微球的制备

采用粉末飘浮法制备了磷酸盐玻璃微球。通过使用差热分析仪,X射线衍射仪,扫描电镜和傅里叶变换红外光谱仪对所制备的磷酸盐玻璃微球的性能进行表征。研究结果表明:磷酸盐玻璃微球的玻璃转化温度和析晶温度为580℃和930℃,主晶相为Mg3(PO4)2,直径约为5μm。所制备的磷酸盐玻璃微球可以用于光学微腔的研究。     

Ge/SiO2纳米晶玻璃的制备及其荧光性质

以正锗酸乙酯和正硅酸乙酯为原料 ,合成了Ge/SiO2 纳米晶玻璃。探索了用溶胶凝胶法合成GeO2 /SiO2 玻璃 ,进而在高温 70 0℃下用氢气将其还原成Ge/SiO2 纳米晶玻璃的全过程。研究了Ge/SiO2 纳米晶玻璃的紫外吸收光谱、X射线衍射谱及荧光光谱。紫外吸收光谱显示由GeO2 /SiO2 玻璃向Ge/SiO2 纳米晶玻璃转变中有组成和结构的改变。X射线衍射谱明显显示有立方相Ge晶体颗粒在玻璃中析出。荧光光谱显示其具有荧光发射效应。根据其荧光发射峰值计算出Ge晶体颗粒平均大小为 3nm     

新型硬盘基板微晶玻璃的晶核剂研究

采用差热分析(DTA)、X-射线衍射分析(XRD)和扫描电镜(SEM)等分析手段研究了P2O5、TiO2、ZnF2作为晶核剂对Li2O-Al2O3-SiO2(LAS)系统微晶玻璃形核和晶化的影响。结果表明:P2O5晶核剂能获得小尺寸的晶粒,晶型为球形或多面体形,析晶的可控制性良好;TiO2晶核剂析晶温度较高,析晶强烈,形成条状细晶;ZnF2晶核剂能获得小尺寸球状晶粒,析晶温度较低,但对温度过于敏感。P2O5作为晶核剂可以获得理想小晶粒的透明微晶玻璃,从而适合于用作新型硬盘基板。     

光学材料 光学塑料、光学陶瓷

TQ174.758.232006054645掺钕锂铝硅玻璃陶瓷制备和发光性能研究=Synthesis andluminescence properties of Nd3 -dopedlithiumaluminosili-cate glass-ceramics[刊,中]/侯朝霞(长春理工大学材料与化工学院.吉林,长春(130022)),苏春辉…//光学学报.—2006,26(6).—869-873采用传统熔融及退火技术,引入合适的添加剂于相对低温下成功制备出掺钕锂铝硅玻璃,通过控制成核和析晶工艺制备出锂铝硅玻璃陶瓷。采用差热分析、X射线衍射、扫描电镜、紫外-可见-近红外分光光度计和荧光光谱仪对材料进行表征。三个发光谱带中心波长位于890nm,1065nm和13…     

火焰水解法制备Si02—Ge02平面波导材料

本文采用火焰水解法（FHD）在单晶Si片上快速淀积SiO2/SiO2-GcO2厚膜，再经过高温玻璃化处理，获得了玻璃态的平面波导材料。下包层SiO2膜的厚度约为40μm，波长1550nm处的折射率为1.4462，芯层SiO2-GeO2膜的厚度为5μm，折射率为1.4631。分别采用XRD、XPS、SEM和椭偏仪等对波导材料表面特性和折射率等进行了测试分析。     

Er3+掺杂含Ba2LaF7纳米晶氧氟硼硅酸盐玻璃陶瓷发光性能的研究

制备了含有Ba2LaF7纳米晶的Er3+掺杂氧氟硼硅盐玻璃陶瓷,并对其光谱特性进行了研究.根据X射线粉末衍射结果可确认制备出Ba2LaF7纳米晶.根据吸收曲线计算了相应的Judd-Ofelt参数,Ω2 随着热处理温度的升高而减小,证明Er3+离子进入到Ba2LaF7纳米晶中.由于Ba2LaF7纳米晶的低声子能量,在玻璃陶瓷中观察到强烈的红光和绿光上转换发光,其上转换发光机理可以归为双光子过程.     

溶胶-凝胶法制备SiO2-TiO2平板光波导工艺研究

采用溶胶-凝胶法制备了SiO₂-TiO₂平板光波导,计算了平板光波导通光条件,分析了硅/钛溶胶-凝胶材料的热性能,观测了平板光波导的结构形貌,并测试了其通光损耗。结果表明：经过200℃,30 min干燥处理的凝胶薄膜呈疏松多孔状态,对于非对称平板波导,存在芯层通光截止厚度,而且当SiO₂-TiO₂芯层厚度为0.5 μm时,SiO₂下包层厚度至少有6 μm才能防止1550 nm波长光泄露入单晶硅衬底中。制备的光波导对于1550 nm波长光传输损耗最小值为0.34 dB/cm。     

纳米多孔SiO2薄膜的制备与红外光谱研究

以正硅酸乙酯为原料,采用溶胶-凝胶法,结合旋转涂胶、超临界干燥工艺在硅片上制备了纳米多孔SiO2薄膜。XRD表明薄膜为无定形态;SEM显示薄膜具有多孔网络结构,其SiO2粒子直径为10~20nm。利用FTIR研究了薄膜的结构,纳米多孔SiO2薄膜含有Si—O—Si与Si—OR结构,呈疏水性;该SiO2薄膜热处理后因含有Si—OH基团而呈吸水性;用三甲基氯硅烷对热处理SiO2薄膜进行修饰可使其呈疏水性,修饰后的薄膜在N2中温度不高于450℃可保持其疏水性与多孔结构。     

Characteristic of high-organized PS/BPS photonic crystals

B2O3-P2O5-SiO2 (BPS) three-dimensional (3D) high-organized polystyrene (PS) opals and inverse opals with large domain were fabricated and characterized.     

Authentication labels based on guided-mode resonant filters

A guided-mode resonance (GMR) filter with wide angular tolerances is experimentally demonstrated as an authentication label illuminated with unpolarized white light. The proposed filter, based on a free-standing silicon nitride membrane suspended on a silicon substrate, is fabricated by using anisotropic wet etching to remove the substrate beneath the silicon nitride layer. Both grating and waveguide structures without a lower cladding layer, i.e., a substrate, are fabricated simultaneously on a silicon nitride membrane. Since the silicon nitride is transparent within the spectra of visible and infrared light, such suspended-membrane-type GMR filters are well suited for applications within the visible spectrum. Moreover, the high refractive index of silicon nitride allows the proposed filters to have strongly modulated gratings and an immunity to high angular deviation. The measured reflection resonance has an angular tolerance up to +/-5 degrees under normal incidence for the wavelength of 629.5 nm.     

氧气流量对脉冲激光沉积ZnO薄膜的形貌及光学性质影响

使用脉冲激光沉积(PLD)方法在石英(SiO2)和单晶Si(111)基底上制备了具有高c轴择优取向的ZnO薄膜。测试结果显示:在30～70sccm氧气流量范围内,氧气流量50sccm时制备的ZnO薄膜具有较好的结晶质量、较高的光学透过率(≥80%)、较高的氧含量(～40.71%)、较快的生长速率(～252nm/h)和较好的发光特性:450～580nm附近发射峰最弱,同时～378nm附近的紫外发光峰最强,表明薄膜材料中含有较少的氧空位等缺陷。     

Surface passivation in n-type silicon and its application in silicon drift detector

Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10¹⁵ cm^-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.     

Athermal silica-based interferometer-type planar light-wave circuits realized by a multicore fabrication method

Athermal silica-based interferometer-type planar light-wave circuits were realized by a newly developed multicore fabrication method. In this method, inductively coupled chemical-vapor deposition and polishing technologies are adopted on a silica substrate with a trench-type waveguide pattern prepared by reactive ion etching. Two kinds of deposited core material, 10GeO2-90SiO2 (mol. %) and 8GeO2-5B2O3-87SiO2 (mol. %), which show wavelength temperature dependence of 9.7 and 8.1 pm/degree C, respectively, were used to prepare the waveguide sections in a device. By adjustment of the lengths of waveguide sections with these two different core materials, athermal characteristics of less than 0.5 pm/degree C were achieved for Mach-Zehnder interferometer filter devices at the 1.55-microm wavelength range while the temperature varied from -20 to 80 degrees C. The new method is also applicable for the preparation of many other kinds of functional devices.     

场发射栅孔阵列的制备

 采用硅的局部氧化技术以及湿法刻蚀技术,利用2.6 μm的光刻掩模板在n型硅片上形成了栅极孔径为1 μm的场发射阴极的栅极空腔阵列,实现了用大阵点尺寸的栅极掩模板制备较小尺寸栅孔阵列。硅的湿法刻蚀溶液采用各向同性的硝酸和氢氟酸混合溶液,刻蚀后空腔的深度和宽度均随刻蚀时间线性增加。同时,由于刻蚀溶液具有较高的Si/SiO₂ 刻蚀选择比,栅极孔径随刻蚀时间增大的速度远低于深度和宽度增大的速度,栅极孔径主要取决于掩模的尺寸和氧化层的厚度。通过选择掩模板的尺寸以及氧化层的厚度,采用局部氧化技术和湿法刻蚀技术能够制备出微米或亚微米的场发射阴极的栅极空腔阵列。     

Deposition of Au/TiO2 film by pulsed laser

Au nanoparticles, which were photoreduced by a Nd:YAG laser in HAuCl₄ solution containing TiO₂ colloid and accompanied by the TiO₂ particles, were deposited on the substrate surface. The film consisting of Au/TiO₂ particles was characterized by the absorption spectra, scanning electron microscopy (SEM) and X-ray diffraction (XRD) analysis. The adhesion between the film and substrate was evaluated by using adhesive tape test. It was found that the presence of TiO₂ dramatically enhanced the adhesion strength between the film and the substrate, as well as the deposition rate of film. The mechanism for the deposition of Au/TiO₂ film was also discussed.     

Temperature sensitivity of Ge-B-SiO(2) waveguide Bragg gratings on a crystallized glass substrate

Waveguide Bragg gratings were fabricated by plasma-enhanced chemical-vapor deposition followed by irradiation with KrF excimer laser light through a phase mask. The period of the Bragg grating was 0.53 mum, and the Bragg wavelength was ~1.53 mum . The temperature dependence of the Bragg wavelength was 11 pm/ degrees C for a 10GeO(2) -90SiO(2)(mol.%) core waveguide on a Si substrate, and the Bragg wavelength shift was successfully reduced to 5.0pm/ degrees C by use of a 14GeO(2)-12B(2)O(3)-74SiO(2) (mol.%) core and a crystallized glass substrate with a thermal-expansion coefficient of -2.0x10(-6)(/ degrees C) .