超导纳米线单光子探测器动态电感研究

单光子探测是一种量子极限光信号的检测技术,超导纳米线单光子探测器(Superconducting NanowireSingle-Photon Detector,SNSPD)作为一种新型的单光子探测技术,在量子通信等众多领域有着广阔的应用前景。SNSPD的动态电感直接决定了SNSPD的工作速度。文中对SNSPD动态电感的特性和测试方法做了详细的研究,成功实现了低温下SNSPD动态电感的测试,并对结果进行了分析处理和研究。利用BCS理论对动态电感随温度、偏置电流变化的特性进行分析计算,并与实际测量结果对比讨论,为未来如何降低SNSPD动态电感、提高其性能的研究工作提供了参考依据。     

超导单光子探测器件直流特性研究

超导单光子探测技术是基于超薄超导薄膜的非平衡态热电子效应的一种新型的单光子探测方法。超导单光子探测器(SNSPD)的计数率可达到GHz,时间抖动小于100ps,因而在未来量子通信系统中有着广阔的应用前景。介绍了NbN超导单光子探测器件的工作原理和器件超导性能测试系统;测试了超导单光子探测器件的电阻-温度、电流-电压等特性。并对测试结果进行了分析和讨论。     

超薄单晶基底本征约瑟夫逊结的制备

为了加强本征约瑟夫逊结(简称本征结)与高频电磁波信号的耦合,我们通过平面工艺手段获得了厚度小于伦敦穿透深度的超薄单晶基底,其厚度小于150nm.并在此基底上利用传统的mesa结构制备工艺制备了本征结.所制备的本征结超导性能没有发生明显的退化,与常规本征结的特性基本一致.     

YBCO薄膜中自旋极化准粒子的注入效应

采用Nd0 .7Sr0 .3MnO3/SrTiO3/YBa2 Cu3O7-δ的异质结构 ,研究了自旋极化准粒子的注入效应 .在 5 6 μm宽的YBCO膜条上成功地制备了与超导膜条同样宽度但不同长度的六个注入结区 ,长度L分别为 80 μm ,4 0 μm ,2 0 μm ,10 μm ,5 μm和 2 μm .80nm厚的YBCO薄膜在 16K温度下Jc 为 2× 10 5A/cm2 .Iin=0 .5mA的自旋电流注入下 ,随L从 80 μm逐渐顺次减小时 ,注入效率 η =ΔJc/ΔJin逐渐增大 .而当L≤ 2 0 μm后 ,η不再增加 ,达到几乎相同的值 (～ 6 ) .初步分析认为这与自旋极化准粒子在超导膜内的有效自旋扩散长度有关 .异质结构中YBCO薄膜的超导电性以及注入窗口的尺寸对获得大的自旋注入效率十分重要 .     

Modification of a YBa2Cu3O7—δ Thin Film Using an Atomic Force Microscope

A YBa2Cu3O7-δ thin film is modified by a probe electric field of an atomic force microscope to form a ridge with the width of only a grain cell.The modification varies with the operation parameters of the bias voltage,the moving velocity of the probe and the ambient humidity.Energy dispersive spectroscopy analysis shows only oxygen deficiency in the modified YBCO thin film.As a result,the suppressed superconductivity was found in the junction crossing the ridge.     

超导纳米线单光子探测器件的制备

超导纳米线单光子探测器件(SNSPD)是超导单光子探测系统的核心器件。文中介绍了成功制备的基于5nm厚的NbN超导超薄薄膜的SNSPD器件。器件核心结构为150nm宽的纳米曲折线结构,纳米线条占空比为75%,面积为20μm×20μm。超导纳米线是利用电子束曝光(EBL)技术和反应离子刻蚀(RIE)等工艺技术制备的。所制备的SNSPD样品,在温度3.5K下的临界电流约12.9μA;在1310nm波长光波辐照,12.5μA的偏置电流下,探测效率约0.016%。     

Photon number resolvability of multi-pixel superconducting nanowire single photon detectors using a single flux quantum circuit

Superconducting nanowire single-photon detectors (SNSPDs) are typical switching devices capable of detecting single photons with almost 100% detection efficiency. However, they cannot determine the exact number of incident photons during a detection event. Multi-pixel SNSPDs employing multiple read-out channels can provide photon number resolvability (PNR), but they require increased cooling power and costly multi-channel electronic systems. In this work, a single-flux quantum (SFQ) circuit is employed, and PNR based on multi-pixel SNSPDs is successfully demonstrated. A multi-input magnetically coupled DC/SFQ converter (MMD2Q) circuit with a mutual inductance M is used to combine and record signals from a multi-pixel SNSPD device. The designed circuit is capable of discriminating the amplitude of the combined signals in accuracy of Φ₀/M with Φ₀ being a single magnetic flux quantum. By employing the MMD2Q circuit, the discrimination of up to 40 photons can be simulated. A 4-parallel-input MMD2Q circuit is fabricated, and a PNR of 3 is successfully demonstrated for an SNSPD array with one channel reserved for the functional verification. The results confirm that an MMD2Q circuit is an effective tool for implementing PNR with multi-pixel SNSPDs.     

跨温区互联技术

以半导体材料为基础的微电子技术正面临尺寸极限和功耗的双重挑战与发展瓶颈. 低温电子学作为突破上述瓶颈的新兴应用研究学科之一, 得到科研和产业界越来越多的关注.2017 年起, 低温电子学和量子信息处理被国际器件与系统路线图(IRDS) 列为重点关注的十大焦点领域之一. 以低温到室温的微弱、 高频电信号传输为核心的跨温区互联技术是低温电子学和量子信息处理必须解决的关键技术之一. 本文对跨温区互联面临的主要问题与挑战、 目前的进展和未来展望进行了综述, 为我国开展相关研究工作提供参考.     

A Silicon Shallow-Ridge Waveguide Integrated Superconducting Nanowire Single Photon Detector Towards Quantum Photonic Circuits

A silicon shallow-ridge waveguide integrated superconducting nanowire single photon detector is designed and fabricated.At the bias current of 11.6μA,4% on-chip detection efficiency near 1550 nm wavelength is achieved with the dark count rate of 3 Hz and a timing jitter of 75 ps.This device shows the potential application in the integration of superconducting nanowire single photon detectors with a complex quantum photonic circuit.     

可控数目本征结的制备

基于传统的mesa结构制备工艺 ,我们通过精确控制实验参数的手段 ,在Bi2 Sr2 CaCu2 O8+x单晶上实现了仅含有少数几个结的本征结的制备工艺 ,结的临界电流具有很好的一致性 .结的数目最少达到 2个 (包括表面结) ;结数目控制误差为±1个 .