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| 超导纳米线单光子探测器件的制备 | |
| 引用本文： | 杨晓燕,尤立星,张礼杰,黄少铭,Mintu Mondal,Sanjeev Kumar,John Jesudasan.超导纳米线单光子探测器件的制备[J].低温与超导,2010,38(11). |
| 作者姓名： | 杨晓燕 尤立星 张礼杰 黄少铭 Mintu Mondal Sanjeev Kumar John Jesudasan |
| 作者单位： | 1. 中国科学院上海微系统与信息技术研究所,信息功能材料国家重点实验室,上海,200050 2. 温州大学,纳米材料与化学重点实验室,温州,325027 3. Tata Institute of Fundamental Research,Homi Bhabha Rd.,Colaba,Mumbai 400005,India |
| 基金项目： | 自然科学基金(60801046); 科技部973项目(2009CB929602); 上海市科学技术委员会(08dz1400702,08PJ1411200,09DJ1400700)资助项目 |
| 摘 要： | 超导纳米线单光子探测器件(SNSPD)是超导单光子探测系统的核心器件。文中介绍了成功制备的基于5nm厚的NbN超导超薄薄膜的SNSPD器件。器件核心结构为150nm宽的纳米曲折线结构,纳米线条占空比为75%,面积为20μm×20μm。超导纳米线是利用电子束曝光(EBL)技术和反应离子刻蚀(RIE)等工艺技术制备的。所制备的SNSPD样品,在温度3.5K下的临界电流约12.9μA;在1310nm波长光波辐照,12.5μA的偏置电流下,探测效率约0.016%。 |
| 关 键 词： | 超导纳米线单光子探测器 电子束曝光 反应离子刻蚀 探测效率 |
Fabrication of superconducting nanowire single photon detector |
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| Yang Xiaoyan,You Lixing,Zhang Lijie,Huang Shaoming,Mintu Mondal,Sanjeev Kumar,John Jesudasan,Pratap Raychaudhuri.Fabrication of superconducting nanowire single photon detector[J].Cryogenics and Superconductivity,2010,38(11). | |
| Authors: | Yang Xiaoyan You Lixing Zhang Lijie Huang Shaoming Mintu Mondal Sanjeev Kumar John Jesudasan Pratap Raychaudhuri |
| Institution: | Yang Xiaoyan1,You Lixing1,Zhang Lijie2,Huang Shaoming2,Mintu Mondal3,Sanjeev Kumar3,John Jesudasan3,Pratap Raychaudhuri3(1.State Key Laboratory of Functional Materials for Information,Shanghai Institute of Microsystem and Information Technology(SIMIT),CAS,Shanghai 200050,China,2.Nanomaterials & Chemistry Key Laboratory,Wenzhou University,Wenzhou 325027,3.Tata Institute of Fundamental Research,Homi Bhabha Rd.,Colaba,Mumbai 400005,India) |
| Abstract: | Superconducting nanowire single photon detector(SNSPD)is the key part of a SNSPD system.We successfully fabricated a SNSPD device based on NbN films with 5nm thickness.The effective area of the device was nanowire meander structure.The width of the nanowire was 150nm,with a filling factor of 0.75.The whole size of the meander structure was 20μm×20μm.The nonowires were fabricated by EBL and RIE processes.The critical temperature of the device was 8.5K,and the critical current was 12.9μA at about 3.5K.With the radiation of light of 1310nm wavelength and the bias current of 12.5μA,we obtained the DE of about 0.016%. |
| Keywords: | Superconducting nanowire single photon detector Electron beam lithograhpy Reactive ion etching Detection efficency |
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