钙钛矿/硅异质结叠层太阳电池:光学模拟的研究进展

近几年,钙钛矿/硅异质结叠层太阳电池发展迅速,效率已经从13.7%提升到29.1%.由于叠层电池器件的制作工艺复杂,而叠层太阳电池中的光学损失对转换效率的影响很大,所以通过光学模拟进而获得高效电池至关重要.本文首先从商业软件和自建模型两方面概述了光学模拟的方法,接着从反射损失和寄生吸收两方面针对光学模拟研究进展进行了总结和分析,最后指出了叠层电池光学模拟过程中需要注意的问题.钙钛矿/硅异质结叠层太阳电池的转换效率极限最高可达40%,具备很大的提升空间,结合模拟工作的研究,叠层电池的发展将会取得更大的进步.     

Microstructure evolution and passivation quality of hydrogenated amorphous silicon oxide(a-SiOx:H) on〈100〉- and 〈111〉-orientated c-Si wafers

Hydrogenated amorphous silicon oxide(a-SiOx:H) is an attractive passivation material to suppress epitaxial growth and reduce the parasitic absorption loss in silicon heterojunction(SHJ) solar cells. In this paper, a-SiOx:H layers on different orientated c-Si substrates are fabricated. An optimal effective lifetime(τ(eff)) of 4743 μs and corresponding implied opencircuit voltage(iV(oc)) of 724 mV are obtained on〈100〉-orientated c-Si wafers. While τ(eff) of 2429 μs and iV_oc of 699 mV are achieved on 111-orientated substrate. The FTIR and XPS results indicate that the a-SiOx:H network consists of SiOx(Si-rich), Si–OH, Si–O–SiHx, SiO2 ≡ Si–Si, and O3 ≡ Si–Si. A passivation evolution mechanism is proposed to explain the different passivation results on different c-Si wafers. By modulating the a-SiOx:H layer, the planar silicon heterojunction solar cell can achieve an efficiency of 18.15%.     

Rashba自旋-轨道相互作用对一维谐振子势场中电子性质的影响

分析了Rashba自旋-轨道相互作用对一维谐振子势场中电子性质的影响,发现该自旋-轨道相互作用能够导致能级之间的自旋翻转,并且自旋翻转的性质明显依赖于自旋-轨道耦合系数和参考系坐标之间的关系.     

平面扇形域问题的新正交关系和变分原理

通过构造新的对偶向量, 用空间的环向坐标数学上比拟Hamilton体系的时间变量,在平面弹性扇形域问题中导出了一个斜对角Hamilton算子. 该算子具有主对角元为零,斜对角元是非零对称算子的结构特性. 得到两个独立的、对称的子正交关系.恰当选择对偶向量后, 直角坐标系下各向同性平面弹性问题的新正交关系被推广到极坐标情形. 根据控制微分方程的弱(积分)形式及相应的边界条件,建立了对应边值问题的变分原理, 并提出了相应的泛函表达式.      

免掺杂、非对称异质接触晶体硅太阳电池的研究进展

免掺杂、非对称异质接触的新型太阳电池由于近几年的飞速发展,理论转化效率已达到28%,具有较大的发展空间,引起了人们的重视.由于传统晶硅太阳电池产业存在生产设备成本高、原材料易燃易爆等诸多限制,市场对太阳电池产业低成本、绿色无污染的期待越来越高,极大地增加了免掺杂、非对称异质接触的新型太阳电池研究和开发的必要性.为了进一步加快免掺杂、非对称异质接触晶体硅太阳电池的研究进度,本文对其发展现状进行了综述,着重讨论了过渡金属氧化物(TMO)载流子选择性运输的基本原理、制备技术以及空穴传输层、电子传输层和钝化层对基于TMO构建的免掺杂、非对称异质接触(DASH)太阳电池性能的影响,以期对电池的工作机理、材料选择有更深刻的认识,为新型高效的DASH太阳电池制备提供指导.     

大孔径变焦投影镜头设计

为了实现某一大孔径定焦投影镜头作为初始结构, 经过优化设计后成为大孔径变焦投影镜头, 根据设计目标的DMD对角线尺寸, 利用AUTOCAD对选择的定焦距系统的初始结构尺寸进行测绘, 初步选择各镜材料, 规划成5组元变焦系统, 利用各种操作数对镜头的基本参数和外形尺寸进行限制, 并合理利用2个非球面, 在光学设计软件Zemax与CODE V中往返优化, 得到一款在可见光波段内, 短焦距为14.61 mm、视场角为60°、F数为1.5, 长焦距为29.31 mm、视场角为30°、F数为1.6的变焦投影镜头。设计结果表明:各视场的传递函数(MTF)值在截至频率60 lp/mm处不低于0.46, 各焦距处的弥散角不超出1.6', 镜头具有良好的像质。该镜头系统由11块透镜和1块平行平板组成, 其中透镜2使用了非球面镜, 该镜头片数较少, 透镜折射率不高, 材料容易选择。     

辉光功率对VHF-PECVD制备的硅基薄膜特性的影响

本文主要研究了用VHF-PECVD方法制备的不同辉光功率条件下系列硅薄膜样品.喇曼测试结果显示:在不同硅烷浓度(SC)条件下,非晶到微晶的过渡区发生在不同的功率点;暗电导随晶化率也体现出不同的变化,此结果表明不同SC、不同功率制备样品的结构特性和电学特性的内在规律是不同的;另外,扫描电子显微镜的测试结果表明样品的表面呈"菜花"状和剖面为柱状的结构特征.     

Magnetic properties of mixed Ising system with random field

A spin-1/2 and spin-3/2 mixed Ising system in a random field is studied by the use of effective-field theory with correlations. The phase diagrams and thermal behaviours of magnetizations are investigated numerically for the honeycomb lattice (z=3) and square lattice (z=4) respectively. The tricritical behaviours for both honeycomb and square lattices, as well as the reentrant behaviour for the square lattice are found.     

Fabrication of high growth rate solar-cell-quality μc-Si:H thin films by VHF-PECVD

Several series of Si:H films were fabricated by the very high frequency plasma enhanced chemical vapour deposition (VHF-PECVD) at different substrate temperatures (T_s) and silane concentration (SC=[SiH_4]/[SiH_4+H_2]%). The results of Raman spectroscopy showed structural evolution of the Si:H films with the variation of T_s and SC. The results of x-ray diffraction (XRD) measurements indicated that T_s also influences the crystal orientation of the Si:H films. The modulation effect of T_s on crystalline volume fraction (X_c) is more evident for the high SC, which shows different trend compared to low SC. In addition, the growth rate of the films also showed a regular change with the variation of SC and T_s. Different samples in the series showed a similar increase in dark conductivity and a decrease in photosensitivity with increasing T_s and decreasing SC. Device-quality microcrystalline silicon materials were deposited at a high growth rate, characterized by relatively low dark conductivity and relatively high photosensitivity in a certain crystalline range. The microcrystalline silicon solar cell with a conversion efficiency of 4.55% has been prepared by VHF-PECVD.     

采用高压RF-PECVD法制备高电导、高晶化率的p型微晶硅材料

本文报道了采用高压射频等离子体增强化学气相沉积(RF-PECVD)方法制备高电导、高晶化率的p型微晶硅材料的结果.重点研究了反应压力和辉光功率对p型微晶硅材料结构和电学特性的影响.通过沉积参数的优化,在很薄的厚度(33nm)时,材料的暗电导率依然达到1.81S/cm,激活能达25meV,晶化率为57;.文中还对高压RF-PECVD能够制备p型微晶硅材料的生长机理和高电导机理进行了分析.