亚稳碘化汞(β-HgI2M)晶体生长与相变

采用溶液法,以α-HgI₂为原料,在DMSO和H₂O混合溶剂中生长了β-HgI₂^M晶体。通过XRD检测了晶体的结构特征,利用偏光显微镜研究了晶体生长的动态过程及β-HgI₂^M→α-HgI₂的相变过程。研究表明,生长的晶体为β-HgI₂^M,空间结构为Cmc2₁;晶体生长界面夹角为65.02°,与β-HgI₂^M单胞中(110)和(110)夹角(65.16°)吻合;β-HgI₂^M→α-HgI₂相变为结构重构的一级相变。     

CdZnTe Energy Levels Induced by Doping of Indium

Photoluminescence (PL) and infrared transmission spectra are used to characterize In-doped Gd0.9Zn0.1 Te (GdZnTe:In).The PL spectrum reveals that there are two other strong emissions situated at 1.54 eV and 1.62 eV as well as the near band edge emission.This indicates that the doped In can lead to two donor levels of 0.12eV and 0.04eV in the CdZnTe band construction,respectively.The IR transmission spectra show that when the wavenumber is larger than 1000cm^-1,the CdZnTe:In was almost opaque to the IR emission.Then its IR transmission rapidly increases to 52% when the wavenumber is decreased to 350cm^-1 and then holds constant.This confirms the existence of the donor level of 0.12 eV.     

Correlation Between the IR Transmission Spectra and the CdZnTe Qualities

Tens of Cd0.9Zn0.1Te wafers from three ingots grown by the vertical Bridgman method (VBM) are characterized by infrared (IR) transmission. Four types of distinct IR transmission spectra are found for these wafers. Each of them corresponds to one kind of wafers with specified quaJities. At the same time, approximate mathematical relations exist between the wafer dislocation density and their IR transmissions at the wavenumber 4000cm^-1, as well as between the resistivity and the IR transmissions at the wavenumber 500cm^-1. The reasons of the above results are attempted to be given.     

垂直Bridgman法变速生长Hg1-xMnxTe晶体

在固液界面迁移理论和SODCM模型(二次反扩散补偿法)的基础上,本文提出采用垂直Bridgman法变速生长Hg1-xMnxTe晶体,并从理论和实验两方面对该方法的可行性进行了验证.与传统垂直Bridgman法的对比实验结果表明,该方法可以在提高轴向组分均匀性的前提下增大抽拉速度,进而提高晶体生长速度.     

HgI2-HI-H2O溶液中静电场诱导的α-碘化汞晶体生长

在HgI_2-HI-H_2O溶液体系中,采用静电场诱导技术生长了HgI_2晶体。利用紫外-可见光谱分析了溶液中分子/离子的存在形式;通过改变电场强度和溶液浓度等因素,得到了不同形貌的HgI_2晶体。结果表明,HgI_2-HI-H_2O溶液中存在[HgI_3]~-,[HgI_4]~(2-)和HgI_2等3种主要成分。静电场诱导离子发生定向迁移,形成取向性生长的晶体,晶体形貌受电场诱导和结构因素(分子键力)共同制约。溶质(负离子)向正极迁移,形成颗粒度大的HgI_2晶体;负极主要是由中性HgI_2键合并相变形成的小颗粒HgI_2晶体。分析认为,HgI_2-HI-H_2O溶液中负离子可以成为晶体生长的基本单元。     

HgI2晶体最低生长温度的确定

为确定HgI2晶体的最佳生长温度,根据邻位面生长的台阶动力学,推导出HgI2分子在(001)面扩散激活能ESD约为0.33 eV,进而采用物理气相沉积法的基本理论推算了不同升华温度T1下HgI2晶体生长的最低温度Tmin.结果表明,计算结果与实际晶体生长温度基本一致.该结果为HgI2单晶体、多晶薄膜、单晶薄膜沉积工艺的优化提供了依据.     

坩埚加速旋转-垂直下降法晶体生长设备的研制

根据CdZnTe等Ⅱ-Ⅵ族化合物半导体晶体生长的基本原理和工艺要求,设计制造了坩埚加速旋转-垂直下降法(ACRT-VBM)晶体生长系统.本文介绍了该系统设计所考虑的基本问题和元器件的选择,给出了系统的基本结构.晶体生长炉的温度控制精度为±1℃,系统的速度均匀度为±0.0015mm/h.该系统的性能指标满足生长直径30mm的CdZnTe晶体的要求.     

亚稳碘化汞(β-HgI2M)晶体生长与相变

采用溶液法,以α-HgI_2为原料,在DMSO和H_2O混合溶剂中生长了β-HgI_2~M晶体。通过XRD检测了晶体的结构特征,利用偏光显微镜研究了晶体生长的动态过程及β-HgI_2M→α-HgI_2的相变过程。研究表明,生长的晶体为β-HgI_2~M,空间结构为Cmc2_1;晶体生长界面夹角为65.02°,与β-HgI_2~M单胞中(110)和(110)夹角(65.16°)吻合;β-HgI_2~M→α-HgI_2相变为结构重构的一级相变。     

Cr2+∶ZnSe中红外激光晶体生长及光谱性能

采用物理气相输运法( PVT),以Cr2+∶ ZnSe多晶为原料,在源区温度约为1000℃、温差为6～7℃条件下生长2周,获得了体积约为0.7 cm3的Cr2+∶ZnSe晶体.紫外-可见-近红外透过光谱显示,Cr2+∶ZnSe样品在1770nm左右出现了强吸收;Cr2+浓度在1019 atoms/cm3数量级,与原料中Cr2+浓度基本一致,反映了较低温度PVT法生长有利于获得预期的Cr2+掺杂浓度.荧光测试结果表明,Cr2+∶ZnSe样品谱线对称性好,发射峰位约在2400 nm,线宽约600 nm;室温荧光寿命为5.52×10-6s.数据分析结果表明,Cr2+∶ZnSe样品的吸收截面和发射截面峰值分别为1.1×10-18cm2和2.3×10-18 cm2.