| CdZnTe Energy Levels Induced by Doping of Indium |
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| 作者姓名： | 李国强 介万奇 谷智 杨戈 王涛 |
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| 作者单位： | [1]StateKeyLaboratoryofSolidificationProcessing,NorthwesternPolytechnicalUniversity,Xi＇an710072 [4]StateKeyLaboratoryofSolidificationProcessing,NorthwesternPolytechnicalUniversity,Xi＇an710072 |
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| 摘 要： | Photoluminescence (PL) and infrared transmission spectra are used to characterize In-doped Gd0.9Zn0.1 Te (GdZnTe:In).The PL spectrum reveals that there are two other strong emissions situated at 1.54 eV and 1.62 eV as well as the near band edge emission.This indicates that the doped In can lead to two donor levels of 0.12eV and 0.04eV in the CdZnTe band construction,respectively.The IR transmission spectra show that when the wavenumber is larger than 1000cm^-1,the CdZnTe:In was almost opaque to the IR emission.Then its IR transmission rapidly increases to 52% when the wavenumber is decreased to 350cm^-1 and then holds constant.This confirms the existence of the donor level of 0.12 eV.
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| 关 键 词： | 碲锌镉化合物 铟掺杂 能量层诱导 光致发光 传输光谱 能带结构 带隙 |
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