Correlation Between the IR Transmission Spectra and the CdZnTe Qualities |
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作者姓名: | 李国强 介万奇 谷智 华慧 |
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作者单位: | StateKeyLaboratoryofSolidificationProcessing,NorthwesternPolytechnicalUniversity,Xi‘an710072 |
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摘 要: | Tens of Cd0.9Zn0.1Te wafers from three ingots grown by the vertical Bridgman method (VBM) are characterized by infrared (IR) transmission. Four types of distinct IR transmission spectra are found for these wafers. Each of them corresponds to one kind of wafers with specified quaJities. At the same time, approximate mathematical relations exist between the wafer dislocation density and their IR transmissions at the wavenumber 4000cm^-1, as well as between the resistivity and the IR transmissions at the wavenumber 500cm^-1. The reasons of the above results are attempted to be given.
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关 键 词: | CdZnTe 红外发射光谱 碲锌镉化合物 宽带隙化合物半导体 光学性质 相关性 |
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