| 垂直Bridgman法变速生长Hg1-xMnxTe晶体 |
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| 引用本文： | 谷智,李国强,张龙,介万奇.垂直Bridgman法变速生长Hg1-xMnxTe晶体[J].人工晶体学报,2004,33(2):137-140. |
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| 作者姓名： | 谷智 李国强 张龙 介万奇 |
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| 作者单位： | 西北工业大学凝固技术国家重点实验室,西安,710072 |
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| 基金项目： | 国家自然科学基金(50336040)和国家杰出青年基金(59825109)资助 |
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| 摘 要： | 在固液界面迁移理论和SODCM模型(二次反扩散补偿法)的基础上,本文提出采用垂直Bridgman法变速生长Hg1-xMnxTe晶体,并从理论和实验两方面对该方法的可行性进行了验证.与传统垂直Bridgman法的对比实验结果表明,该方法可以在提高轴向组分均匀性的前提下增大抽拉速度,进而提高晶体生长速度.
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| 关 键 词： | HgMnTe 垂直Bridgman法 变速生长 固液界面迁移 组分均匀性 |
| 文章编号： | 1000-985X(2004)02-0137-04 |
Vertical Bridgman Growth of Hg1-xMnxTe with Variational Withdrawal Rate |
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| GU Zhi,LI Guo-qiang,ZHANG Long,JIE Wan-qi University,Xi'an ,China.Vertical Bridgman Growth of Hg1-xMnxTe with Variational Withdrawal Rate[J].Journal of Synthetic Crystals,2004,33(2):137-140. |
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| Authors: | GU Zhi LI Guo-qiang ZHANG Long JIE Wan-qi University Xi'an China |
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| Institution: | GU Zhi,LI Guo-qiang,ZHANG Long,JIE Wan-qi University,Xi'an 710072,China) |
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| Abstract: | Based on the solid/liquid interface shift theory and the SODCM (the second-order opposite diffusion compensation method) model, the vertical Bridgman growth of Hg_(1-x)Mn_xTe with variational withdrawal rate was studied and its feasibility was validated through theoretical analysis and experimental results. Both theoretical analysis and experimental results show that the axial composition uniformity is improved at the optimized variational withdrawal rate and the crystal growth rate is also increased meanwhile. |
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| Keywords: | HgMnTe vertical Bridgman growth variational withdrawal rate solid/liquid interface shift composition uniformity |
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