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排序方式: 共有157条查询结果,搜索用时 312 毫秒
1.
Fabrication and Characterization of Ni Thin Films Using Direct-Current Magnetron Sputtering 总被引:1,自引:0,他引:1 下载免费PDF全文
Ni films are deposited by using ultra high vacuum dc magnetron sputtering onto silicon substrates at room temperature, and the high-quality and high-density films are prepared. The parameters, such as thickness, density and surface roughness, are obtained by using small-angle x-ray diffraction (XRD) analyses with the Marquardt gradient-expansion algorithm. The deposition rate is calculated and the Ni single layer can be fabricated precisely. Based on the fitting results, we can find that the surface roughness of the Ni films is about 0.7nm, the densities of Ni films are around 97% and the deposition rate is 0.26nm/s. The roughness of the surface is also characterized by using an atomic force microscope (AFM). The changing trend of the surface roughness in the simulation of XRD is in good agreement with the AFM measurement. 相似文献
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介绍了一种可应用于X射线Kirkpatrick-Baez(KB)显微镜的光学元件—X射线超反射镜。选用的W和B4C作为镀膜材料,膜对数为20,采用单纯型调优的方法实现了X射线超反射镜设计,用磁控溅射的方法在Si基片上完成了W/B4C X射线超反射镜的制备。采用高分辨率X射线衍射仪(8 keV)测量了X射线超反射镜的反射特性。制备的X射线超反射镜在掠入射角分别为1.052°和1.143°处,反射角度带宽为0.3°,反射率达到20%,可满足KB型显微镜的要求。 相似文献
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The multilayer (ML) mirror with high-reflectivity (HR) at a specific emission line of 19.5 nm (Fe line) and low-reflectivity (LR) at 30.4 nm (He line) is needed to be designed and fabricated for observing the image of sun. Based on a variety of optimizations utilized different structures, the design is performed and the final results demonstrate that the reflectivity at 30.4 nm does not achieve minimum value when the reflectivity at 19.5 nm reaches the maximum value. The tradeoff should be done between the HR at 19.5 nm and LR at 30.4 nm. One optimized mirror is fabricated by direct current magnetron sputtering and characterized by grazing-incident X-ray diffraction (XRD) and synchrotron radiation (SR). The experimental results demonstrate that the ML achieves the reflectivity of 33.3% at 19.5 nm and of 9.6× 10-4 at 30.4 nm at the incident angle of 13°. 相似文献
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组合刻蚀法制备窄带滤光片列阵 总被引:4,自引:0,他引:4
介绍了组合刻蚀法制备窄带滤光片列阵的基本原理和制备工艺,这是一种效率非常高的制备方法,只需N次刻蚀就可以完成2N通道窄带滤光片列阵的制备,而且可以用于制备不同波段窄带滤光片列阵。展示了可见-近红外波段32通道窄带滤光片列阵和中红外波段16通道窄带滤光片列阵的实验结果,其中32通道窄带滤光片列阵的带通峰位基本呈线性分布在774.7~814.2 nm之间,所有滤光片的半峰全宽都非常窄(δλ<1.5 nm),相应于δλ/λ<0.2%,半峰全宽最窄的滤光片达到0.8 nm,相应于δλ/λ<0.1%,其带通峰位λ=794.3 nm;各通道的带通透过率在21.2%~32.4%之间,大部分在30%左右。 相似文献
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The B4C/Mo/Si high reflectivity multilayer mirror was designed for He-Ⅱradiation (30.4 nm) using the layer-by-layer method. The theoretical peak reflectivity was up to 38.2% at the incident angle of 5℃. The B4C/Mo/Si multilayer was fabricated by direct current magnetron sputtering and measured at the National Synchrotron Radiation Laboratory (NSRL) of China. The experimental reflectivity of the B4C/Mo/Si multilayer at 30.4 nm was about 32.5%. The promising performances of the B4C/Mo/Si multilayer mirror could be used for the construction of solar physics instrumentation. 相似文献
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