Structural and Electrical Characteristics of Pb（Zr0.53,Ti0.47）O3 Thin Films Deposited on Si （100） Substrates

Pb(Zr0.53, Ti0.47)O3 (PZT) films were directly deposited on Si substrates without a buffer layer by pulsed laser deposition. Only(110)-oriented PZT peaks (other than Si substrate peaks) were observed from the XRD data. The electrical properties of the PZT/Si capacitor were characterized in terms of both the capacitance versus voltage (C-V) and current versus voltage (I-V) measurements. The clockwise trace of the C-V curve shows ferroelectric polarization switching, as is expected. From the I-V curves, the Schottky emission and spacecharge-limited-current behaviour are found to be the mainly leakage current mechanism in a certain electric field range in the negative and positive bias, respectively.     

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在四阳极直流放电装置上,测量并分析了辉光放电的电流-电压和发光特征随气压的变化关系。结果表明,采用稳流放电模式比稳压放电具有更宽的稳定放电气压和电流范围,能在从1～800Pa的较宽气压范围内实现氦气辉光放电,放电电流可达到500mA左右。随着电极表面亮斑的变化,对于同一气压,在低电流区,放电电压几乎成指数增长;随电流增大,电压的增长速度变缓;对于高的气压,碰撞频率的增大使得电压随电流升高的速率变小。分析表明,放电处于异常辉光区。从放电管的CCD图像可以看出,对于同一放电电流,随气压的升高,等离子体往阴极收缩。     

Dispersion state and catalytic properties of vanadia species on the surface of V_2O_5/TiO_2 catalysts

The dispersion state and catalytic properties of anatase-supported vanadia species are studied by means of X-ray diffraction (XRD), laser Raman spectroscopy (LRS), H2 temperature-programmed reduction (TPR) and the selective oxidation of o-xylene to phthalic anhydride. The almost identical values of the experimental dispersion capacity of V2O5 on anatase and the surface vacant sites available on the preferentially exposed (001) plane of anatase suggest that the highly dispersed vanadium cations are bonded to the vacant sites on the surface of anatase as derived by the incorporation model. When the loading amount of V2O5 is far below its dispersion capacity, the dispersed vanadia species might mainly consist of isolated VOx species bridging to the surface through V-O-Ti bonds. With the increase of V2O5 loading the isolated vanadia species interact with their nearest neighbors (either isolated or polymerized vanadia) through bridging V-O-V at the expenses of V-O-Ti bonds, resulting in the increase of the ra     

V2O5/TiO2催化剂表面钒氧物种的分散状态和催化性能

用X射线衍射(XRD)、激光拉曼光谱(LRS)、程序升温还原(TPR)和微反评价等手段研究了V₂O₅在TiO₂(锐钛)表面的分散状态和负载型V₂O₅/ TiO₂(锐钛)催化剂的邻二甲苯选择氧化催化性能. 结果表明在TiO₂(锐钛)表面V₂O₅分散容量的实测值(1.14 mmol V/100 m² TiO₂)与TiO₂(锐钛) 优先暴露晶面(001)上的空位密度(1.16 mmol/100 m² TiO₂)接近, 这表明分散的钒离子可能键合在TiO₂(锐钛)表面的空位上, 与嵌入模型估算结果相符. 当V₂O₅的负载量远低于其分散容量时, 表面上的钒氧物种主要为孤立的VOx通过V-O-Ti键与载体结合. 随V₂O₅负载量的增加, 孤立的VOx与其最近邻的钒氧物种(可为孤立或聚合)通过V-O-V键结合, 导致V-O-Ti键的比例降低和聚合钒氧物种的比例增多、表面氧物种的反应活性降低. 虽然V₂O₅/TiO₂催化剂的邻二甲苯选择氧化的活性随负载量增加而增加, 到钒氧物种成单层时达极大, 但按每个钒离子估算的TON(转化数)却随负载量的增加而线性下降. 当V₂O₅的负载量高于其分散容量时, 增加的V₂O₅以晶相形式存在, 此时除钒离子的利用率降低外, 还由于晶相V₂O₅中只有V-O-V存在, 与之相结合的氧离子的活性较与V-O-Ti键合的弱, 邻二甲苯选择氧化的活性随负载量的增加有所下降, 而其TON则更为迅速地线性降低.     

Electronic Phase Separation in Iron Selenide(Li,Fe)OHFeSe Superconductor System

The phenomenon of phase separation into antiferromagnetic(AFM) and superconducting(SC) or normal-state regions has great implication for the origin of high-temperature(high-T_c) superconductivity. However, the occurrence of an intrinsic antiferromagnetism above the T_c of(Li,Fe)OHFe Se superconductor is questioned. Here we report a systematic study on a series of(Li,Fe)OHFe Se single crystal samples with T_c up to ～41 K. We observe an evident drop in the static magnetization at T_(afm) ～ 125 K, in some of the SC(T_c 38 K, cell parameter c■9.27 ?) and non-SC samples. We verify that this AFM signal is intrinsic to(Li,Fe)OHFe Se. Thus, our observations indicate mesoscopic-to-macroscopic coexistence of an AFM state with the normal(below T_(afm)) or SC(below T_c) state in(Li,Fe)OHFe Se. We explain such coexistence by electronic phase separation, similar to that in high-T_c cuprates and iron arsenides. However, such an AFM signal can be absent in some other samples of(Li,Fe)OHFe Se, particularly it is never observed in the SC samples of T_c 38 K, owing to a spatial scale of the phase separation too small for the macroscopic magnetic probe. For this case, we propose a microscopic electronic phase separation. The occurrence of two-dimensional AFM spin fluctuations below nearly the same temperature as T_(afm), reported previously for a(Li,Fe)OHFe Se(T_c ～ 42 K) single crystal, suggests that the microscopic static phase separation reaches vanishing point in high T_c(Li,Fe)OHFe Se. A complete phase diagram is thus established. Our study provides key information of the underlying physics for high-T_c superconductivity.     

Effect of heat treatment on electronic phase in underdoped La2-xSrxCuO4 single crystal

Superconducting La1.937Sr0.063CuO4 crystals grown by the travelling-solvent floating-zone technique were thermally treated under various temperatures and oxygen pressures for moderately adjusting the oxygen content. The response of intrinsic electronic property of the crystals to the change of hole density in La2-xSrxCuO4 in the vicinity of the magic doping of x= 1/16 （= 0.0625） is studied in detail by magnetic measurements under various fields up to 1 T. It is found that when the superconducting critical temperature （Tc） increases with the oxygen content, there appears also a new subtle electronic state that can be detected from the differential curves of diamagnetic susceptibility dx/dT of the crystal sample. In contrast with the intrinsic state, the new subtle electronic state is very fragile under the magnetic fields. Our results indicate that a moderate change in oxygen doping does not significantly modify the intrinsic electronic state originally existing at the magic doping level.     

The effects of interstitial oxygen on superconducting electronic phases in strontium and oxygen co-doped La1.937Sr0.063CuO4＋δ

Strontium and oxygen co-doped La1.937Sr0.063CuO4＋δ superconductor with Tc≈ 40K, which is obtained by oxidizing strontium-doped starting ceramic sample La1.937Sr0.063CuO4 in NaC10 solution, is annealed under different conditions to allow interstitial oxygen to redistribute. The evolution of the intrinsic superconducting property with the oxygen redistribution is studied in detail by magnetic measurements in various fields. It is found that there occurs the electronic phase separation from the single superconducting phase with Tc ≈ 40 K into two coexisting superconducting states with values of Tc： 15 and 40K or of 15 and 35 K in this system, depending on annealing condition. Our results indicate that the 15, 35 and 40 K superconducting phases associated with the excess oxygen redistribution are all thermodynamically meta-stable intrinsic states in this Sr/O co-doped cuprate.     

对物理演示实验及其设计的探讨

介绍中学物理演示实验的类型，提出设计的基本要求及探讨实验教学的基本程序。     

用椭偏术研究与接触介质有关的贵金属的介电函数

为了研究接触介质对金属光学性质的影响，实验中使用具有不同折射率的梯形棱镜作为衬底，将金和银蒸发到棱镜底部，用椭偏术分别测量了薄膜在金属-空气、金属-衬底界面的介电函数.结果表明：无论在Drude区，还是在带间跃迁区，金属-衬底界面处薄膜介电函数不仅与金属-空气界面处的测量值不同，而且随衬底折射率改变而改变.在固体接触条件下获得的结果与其他作者在液体接触条件下获得的结果相一致，但尚难被现有机制所解释. 关键词：     

Common Features in Electronic Structure of the Oxypnictide Superconductors from Photoemission Spectroscopy

High resolution photoemission measurements are carried out on non-superconducting LaFeAsO parent com- pound and various superconducting RFeAs（O1-ZFx） （R=La, Ce and Pr） compounds. It is found that the parent LaFeAsO compound shows a metallic character. By extensive measurements, several common features are identified in the electronic structure of these Fe-based compounds： （1） 0.2 eV feature in the valence band, （2） a universal 13-16 meV feature, （3） near EF spectral weight suppression with decreasing temperature. These uni- versal features can provide important information about band structure, superconducting gap and pseudogap in these Fe-based materials.