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催化材料对病毒的吸附和灭活作用及对哺乳动物细胞的毒性 总被引:4,自引:0,他引:4
刘中民 张卓然 许国旺 杨凌 马磊 孙承林 许磊 齐越 赵春霞 明平文 陈严 郑丛龙 杜逊甫 韩秀文 张涛 黄向阳 包信和 刘波 刘守新 王爱琴 曲振平 缪少军 胡刚 刘页 《催化学报》2003,24(5):323-327
提出了以吸附和催化原理灭活病毒的设想,旨在开发出对病毒有过滤、吸附及灭活作用的高效非特异性催化材料,应用于各种防护设施,有效控制非典型肺炎(SARS)的传播.采用与SARS病毒相似的副流感病毒作为模拟对象,进行了吸附及灭活该病毒的催化材料研究,并考察了催化材料对哺乳动物细胞的毒性.结果表明,病毒气溶胶的阻留及吸附结果与基于DNA吸附的色谱分析结果相一致;部分材料可以强烈地吸附病毒(100%),甚至在强烈振荡下并洗脱至第3次,病毒也不能脱附;一些材料不仅可以吸附病毒,而且强烈振荡后的洗脱液虽然表现出一定的血凝效价,但接种鸡胚后,病毒并不增殖,说明材料具有明显的催化病毒灭活性能;对细胞毒性极低的材料可以用在与人体接触的防护材料和设施中.筛选出的性能优异的催化材料,拟进一步考察其对SARS病毒的灭活作用. 相似文献
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推广了Baek等人最近提出的一个双向行人流模型,提出了两种改进策略,并从行人平均速度-密度关系、行人空间分布密度和位置分布等方面进行了数值分析. 研究发现,引入的两个新策略不仅可以提高行人流的平均速度,而且可以提高道路系统(尤其是道路中央区域)利用率,减轻拥堵状况,有效避免严重堵塞的发生. 改进的策略对行人的心理特点和行为特性等方面考虑更加全面,而且可以较好地模拟高密度的双向行人流.
关键词:
元胞自动机模型
双向行人流
交通惯例 相似文献
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针对氮化碳(C3N4)光生电荷易复合、光催化性能有限的不足,我们制备N和F共掺杂C3N4(NF-C3N4),以提升其光催化性能。利用NH4F在高温下原位分解产生的HF和NH3,对C3N4刻蚀的同时实现N和F双元素共掺杂。以氯化铵(NH4Cl)为对照,制备N掺杂C3N4(N-C3N4)。利用扫描电子显微镜(SEM)、能谱仪(EDS)、X射线光电子能谱(XPS)、X射线衍射(XRD)、比表面积测试和电化学表征手段研究N、F共掺杂对C3N4形貌、成分、结构和物化性质等的影响规律。相比于C3N4和N-C3N4,NF-C3N4呈多孔状,比表面积增大,光生电荷的生成、分离和转移均被促进,NF-C3N4光催化还原Cr (Ⅵ)的速率是C3N4的2.6倍、N-C3N4的1.7倍。进一步考察了不同前驱体(尿素、双氰胺和三聚氰胺)对制备C3N4的影响,发现以尿素为前驱体的C3N4与NH4F的质量比为3∶2时,NF-C3N4呈现最佳的光催化性能。催化剂用量、光照强度、空穴捕获剂浓度的增加和pH的降低均能提高Cr (Ⅵ)还原速率。在NF-C3N4浓度为0.1 g·L-1、pH=3、cEDTA-2Na=2 mmol·L-1、40 min可见光照射后,Cr (Ⅵ)去除率达到90%。5次循环实验表明,优化制备的NF-C3N4光催化还原Cr (Ⅵ)的性能保持良好,具有较高的稳定性。 相似文献
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Electric-stress reliability and current collapse of different thickness SiNx passivated AlGaN/GaN high electron mobility transistors 下载免费PDF全文
This paper investigates the impact of electrical degradation and current collapse on different thickness SiNx passivated AlGaN/GaN high electron mobility transistors.It finds that higher thickness SiNx passivation can significantly improve the high-electric-field reliability of a device.The degradation mechanism of the SiNx passivation layer under ON-state stress has also been discussed in detail.Under the ON-state stress,the strong electric-field led to degradation of SiNx passivation located in the gate-drain region.As the thickness of SiNx passivation increases,the density of the surface state will be increased to some extent.Meanwhile,it is found that the high NH 3 flow in the plasma enhanced chemical vapour deposition process could reduce the surface state and suppress the current collapse. 相似文献
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The etch-stop structure including the in-situ SiN and AlGaN/GaN barrier is proposed for high frequency applications.The etch-stop process is realized by placing an in-situ SiN layer on the top of the thin AlGaN barrier.F-based etching can be self-terminated after removing SiN,leaving the AlGaN barrier in the gate region.With this in-situ SiN and thin barrier etch-stop structure,the short channel effect can be suppressed,meanwhile achieving highly precisely controlled and low damage etching process.The device shows a maximum drain current of 1022 mA/mm,a peak transconductance of 459 mS/mm,and a maximum oscillation frequency(fmax)of 248 GHz. 相似文献
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High-frequency enhancement-mode millimeterwave AlGaN/GaN HEMT with an fT/fmax over 100 GHz/200 GHz 下载免费PDF全文
Ultra-thin barrier (UTB) 4-nm-AlGaN/GaN normally-off high electron mobility transistors (HEMTs) having a high current gain cut-off frequency (fT) are demonstrated by the stress-engineered compressive SiN trench technology. The compressive in-situ SiN guarantees the UTB-AlGaN/GaN heterostructure can operate a high electron density of 1.27×1013cm-2, a high uniform sheet resistance of 312.8 Ω /□, but a negative threshold for the short-gate devices fabricated on it. With the lateral stress-engineering by full removing in-situ SiN in the 600-nm SiN trench, the short-gated (70 nm) devices obtain a threshold of 0.2 V, achieving the devices operating at enhancement-mode (E-mode). Meanwhile, the novel device also can operate a large current of 610 mA/mm and a high transconductance of 394 mS/mm for the E-mode devices. Most of all, a high fT/fmax of 128 GHz/255 GHz is obtained, which is the highest value among the reported E-mode AlGaN/GaN HEMTs. Besides, being together with the 211 GHz/346 GHz of fT/fmax for the D-mode HEMTs fabricated on the same materials, this design of E/D-mode with the realization of fmax over 200 GHz in this work is the first one that can be used in Q-band mixed-signal application with further optimization. And the minimized processing difference between the E- and D-mode designs the addition of the SiN trench, will promise an enormous competitive advantage in the fabricating costs. 相似文献
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