具有中心对称结构的3m点群晶体中紫外三次谐波的产生

研究了中心对称晶体中的三阶非线性频率转换,并在这类晶体中实现了紫外激光的有效输出.确定了负单轴晶体的相位匹配角公式及相应的相位匹配角.选择带有离域共轭π键的冰洲石晶体和α-BBO晶体进行实验.以飞秒激光作为基频光,在Ⅱ类相位匹配方式下,利用α-BBO晶体获得了最高单脉冲能量为37.6μJ的266nm紫外三次谐波,最高转换效率为2.5%;利用冰洲石晶体获得了最高单脉冲能量为19.3μJ的266nm紫外三次谐波,最高转换效率为1.25%.该研究验证了利用中心对称晶体的三阶非线性效应直接获得紫外激光的可行性和获得深紫外激光的可能性,为紫外非线性晶体的探索和深紫外激光的研究提供参考.     

In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

The etch-stop structure including the in-situ SiN and AlGaN/GaN barrier is proposed for high frequency applications.The etch-stop process is realized by placing an in-situ SiN layer on the top of the thin AlGaN barrier.F-based etching can be self-terminated after removing SiN,leaving the AlGaN barrier in the gate region.With this in-situ SiN and thin barrier etch-stop structure,the short channel effect can be suppressed,meanwhile achieving highly precisely controlled and low damage etching process.The device shows a maximum drain current of 1022 mA/mm,a peak transconductance of 459 mS/mm,and a maximum oscillation frequency(fmax)of 248 GHz.     

High-frequency enhancement-mode millimeterwave AlGaN/GaN HEMT with an fT/fmax over 100 GHz/200 GHz

Ultra-thin barrier (UTB) 4-nm-AlGaN/GaN normally-off high electron mobility transistors (HEMTs) having a high current gain cut-off frequency (f_T) are demonstrated by the stress-engineered compressive SiN trench technology. The compressive in-situ SiN guarantees the UTB-AlGaN/GaN heterostructure can operate a high electron density of 1.27×10¹³cm^-2, a high uniform sheet resistance of 312.8 Ω /□, but a negative threshold for the short-gate devices fabricated on it. With the lateral stress-engineering by full removing in-situ SiN in the 600-nm SiN trench, the short-gated (70 nm) devices obtain a threshold of 0.2 V, achieving the devices operating at enhancement-mode (E-mode). Meanwhile, the novel device also can operate a large current of 610 mA/mm and a high transconductance of 394 mS/mm for the E-mode devices. Most of all, a high f_T/f_max of 128 GHz/255 GHz is obtained, which is the highest value among the reported E-mode AlGaN/GaN HEMTs. Besides, being together with the 211 GHz/346 GHz of f_T/f_max for the D-mode HEMTs fabricated on the same materials, this design of E/D-mode with the realization of f_max over 200 GHz in this work is the first one that can be used in Q-band mixed-signal application with further optimization. And the minimized processing difference between the E- and D-mode designs the addition of the SiN trench, will promise an enormous competitive advantage in the fabricating costs.     

基于硼酸酯的19F磁共振分子探针的设计合成及活体深组织活性氧物种的激活响应成像

活性氧簇(ROS), 如过氧化氢, 在生物体内的各种生理和病理过程中发挥着重要作用. 生物体内活性氧簇水平的异常与多种疾病(炎症、 肿瘤和器官损伤等)密切相关, 使ROS监测成为研究和诊断这些疾病的重要工具. 目前, 实现活体内深组织中的活性氧簇成像仍然面临挑战. 本文设计并合成了一种响应型的¹⁹F磁共振成像(MRI)探针(Gd-DPBF), 并将其用于实现对活体内通用活性氧簇的检测和成像. 该探针由钆螯合物通过活性氧簇响应的芳香硼酸酯键与含氟砌块相连接构成. 体外和体内成像实验结果证实, 该探针可以实现在活体荷瘤小鼠中针对肿瘤中高表达的活性氧进行检测和成像, 展示了其在生物体内对活性氧簇相关生理过程进行深组织、 零生物背景成像方面的潜力.     

两级载荷下复合材料层板疲劳与寿命预测

研究了复合材料层板疲劳过程中的累积应变演化规律，建立了以累积应变为基础的非线性积累损伤法则，实验结果表明：文中提出的累积应变方法能够较好地反映加载次序效应，准确地预测了复合材料层板在两级载荷下的疲劳寿命。     

复合材料层板疲劳损伤加栽次序效应研究

从能量耗散的角度出发，建立了一种有效循环滞回能为基础的非线性疲劳损伤累积法则，并从理论和实验两方面证明了该法则能够正确反映载荷次序效应。     

用等离子体增强化学气相沉积技术制备类金刚石碳薄膜的摩擦磨损性能研究

利用射频-直流等离子体增强化学气相沉积技术在单晶硅衬底上沉积类金刚石碳薄膜,采用激光拉曼光谱仪和原子力显微镜对薄膜的结构和表面形貌进行表征,采用纳米压痕仪测定薄膜的硬度,并用UMT型微摩擦磨损试验机考察了薄膜在不同试验条件下的摩擦磨损性能.结果表明:所制备的类金刚石碳薄膜表面光滑致密且硬度较高;在干摩擦条件下与GCr15钢球或Al2O3球配副时显示出良好的减摩抗磨性能,摩擦系数较低,耐磨寿命较长,而在水润滑条件下同Al2O3球配副时发生灾难性磨损.     

未熔透尺寸对十字焊接接头疲劳性能影响规律试验研究

针对某厂一压力机架的焊接结构，采用极大似然方法，进行了部分熔透焊接十字接头的拉—拉疲劳试验，得到了该类结构的Ｐ－Ｓ－Ｎ对数曲线。研究了未熔透尺寸对接头的应力集中系数、疲劳强度和试件疲劳破坏形式的影响规律，结果表明，在焊缝与母材等强的情况下，当未熔透尺寸２ａ／Ｔ＜０．５时，其疲劳性能无明显减弱；而当未熔透尺寸２ａ／Ｔ＞０．５时，则接头的抗疲劳性能有显著的改变。