In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

The etch-stop structure including the in-situ SiN and AlGaN/GaN barrier is proposed for high frequency applications.The etch-stop process is realized by placing an in-situ SiN layer on the top of the thin AlGaN barrier.F-based etching can be self-terminated after removing SiN,leaving the AlGaN barrier in the gate region.With this in-situ SiN and thin barrier etch-stop structure,the short channel effect can be suppressed,meanwhile achieving highly precisely controlled and low damage etching process.The device shows a maximum drain current of 1022 mA/mm,a peak transconductance of 459 mS/mm,and a maximum oscillation frequency(fmax)of 248 GHz.     

High-frequency enhancement-mode millimeterwave AlGaN/GaN HEMT with an fT/fmax over 100 GHz/200 GHz

Ultra-thin barrier (UTB) 4-nm-AlGaN/GaN normally-off high electron mobility transistors (HEMTs) having a high current gain cut-off frequency (f_T) are demonstrated by the stress-engineered compressive SiN trench technology. The compressive in-situ SiN guarantees the UTB-AlGaN/GaN heterostructure can operate a high electron density of 1.27×10¹³cm^-2, a high uniform sheet resistance of 312.8 Ω /□, but a negative threshold for the short-gate devices fabricated on it. With the lateral stress-engineering by full removing in-situ SiN in the 600-nm SiN trench, the short-gated (70 nm) devices obtain a threshold of 0.2 V, achieving the devices operating at enhancement-mode (E-mode). Meanwhile, the novel device also can operate a large current of 610 mA/mm and a high transconductance of 394 mS/mm for the E-mode devices. Most of all, a high f_T/f_max of 128 GHz/255 GHz is obtained, which is the highest value among the reported E-mode AlGaN/GaN HEMTs. Besides, being together with the 211 GHz/346 GHz of f_T/f_max for the D-mode HEMTs fabricated on the same materials, this design of E/D-mode with the realization of f_max over 200 GHz in this work is the first one that can be used in Q-band mixed-signal application with further optimization. And the minimized processing difference between the E- and D-mode designs the addition of the SiN trench, will promise an enormous competitive advantage in the fabricating costs.     

AN IMPROVEMENT AND PROOF OF OGY METHOD

I.IntroductionRecenhycontrollingchaosbecomesaninterestingsubject.In1990,E.Ott,C.GreogiandJ.A.Yorkelllgaveacollceptionofcontrollingchaos,andgaveacontrollingmethodknownasOGYmethod.ThereweremanyresultsthatshowedOGYmethodiseffective.AfterOGY,manymethodsofcontrollingchaosweregiven,mostofthemwerebasedonOGY13'4'5'6'71.SoOGYmethodisthefundamentofcontrollingchaos.ToachieveaproofofOGYisanimportanttaskformathematicstheoryofcontrollingchaos.Thispaperchangesthemethodofchoosingparameter,andprove…     

CONTROLLING HYPERCHAOS IN PLANAR SYSTEMS BY ADJUSTING PARAMETERS

IntroductionIn 1 990 ,Ott,GrebogiandYorke (OGY)introducedtheconceptofcontrolofchaosandgaveamethodforcontrollingchaos,knownastheOGYmethod[1].AfterOGY ,manyothermethodsforcontrollingchaoshavebeendeveloped[2 - 8].Otherrelatedtopics,suchasnoiseeffectsandoptimizationofthecontrol,havealsobeeninvestigated[9- 12 ].TheOGYmethodconsidersthemapξn+ 1=Fp(ξn) ,ξ∈R2 ,wherep∈Risaparameter,whichhasasaddleatacertainvalueoftheparameter.Thereforethereareaone_dimensionalstablemanifoldandaone_dimension…     

史丰收案件在中国科技史上的警示意义

中国珠算界人士于1973年发明、1974年归纳总结载入杭州小学课本的“29句口诀”和“本个加后进”的“乘法进位规律”,为传统珠算向珠心算新阶段的发展提供了“核心技术”之一。自中国珠算协会成立后的80年代初起。经珠算界不断的发展完善,珠心算从最初的用于珠算选手培养训练,继而用于幼少儿的启智教育。于今,珠心算已走向世界,为人类的启智造福。这是中国珠算界的贡献,也是全民族的骄傲。但是．上世纪末却有一位“速算名人”剽窃了珠算界的这一科研成果,之后竞反诬珠界人士“偷桃窃果”,随之提起诉讼。运作媒体,引发了一场惊动京城的舆论大哗。对于其人这种“偷桃毁树”的行径,中国珠算协会理所当然地派出专家组出庭维权．后来那位“速算名人”虽承认诬告失实,却一直回避核心技术的发明归属问题,一次次制造干扰。使应对真正“偷桃”行径的追究不了了之。之后,这位“速算名人”又一次次把水搅浑,混淆视听。制造了一场类似前苏联的“李森科现象”。为维护珠算界发明权,还正义于真面貌,本刊发表当年曾出庭维权的“珠界四老”的文章《史丰收案件在中国科技史上的警示意义》立此存照,以杜欺世盗名行为之继续。     

考虑交通出行惯例的双向行人流模型研究

推广了Baek等人最近提出的一个双向行人流模型,提出了两种改进策略,并从行人平均速度-密度关系、行人空间分布密度和位置分布等方面进行了数值分析. 研究发现,引入的两个新策略不仅可以提高行人流的平均速度,而且可以提高道路系统(尤其是道路中央区域)利用率,减轻拥堵状况,有效避免严重堵塞的发生. 改进的策略对行人的心理特点和行为特性等方面考虑更加全面,而且可以较好地模拟高密度的双向行人流. 关键词： 元胞自动机模型 双向行人流 交通惯例     

不同长度端壁翼刀对跨声速压气机叶栅二次流影响的数值研究

对可控扩散叶型(CDA)环形叶栅和4种具有不同长度和流向位置的端壁翼刀叶栅内的三维黏性流场进行了数值模拟。结果表明:较长翼刀对气流横向流动的阻断作用较强,较短翼刀产生的附加损失较小;加装翼刀后叶栅中部气流流动状况显著改善,但端壁附近损失有所增加;翼刀加装在流道前部比后部更有利于降低总能量损失,占据前1/2流道的翼刀方案为本文最佳翼刀方案,使叶栅总能量损失比原型叶栅低2.2%。     

等离子体助燃旋流扩散火焰的光谱分析

介质阻挡放电(DBD)辅助燃烧是等离子体技术领域发展起来的新的应用途径.本文利用CCD相机及光谱仪记录并分析甲烷-空气旋流扩散燃烧火焰形态及特征光谱,研究了等离子体激励的助燃、稳燃机理,分析了不同激励方式对等离子激励效果的影响。实验结果表明,等离子体激励放电会产生大量的自由基及活性基团,如CH,OH,O~+,O原子的各激发态能级及N_2第一正带系等谱线,其中重点分析了加电前后及不同激励方式下O原子(3s~3S~0→3p~5P,λ=777.5 nm)及氮气第一正带系B~3Π_g→A~3∑_u~+粒子(振动带波长为λ=891.2 nm)发射光谱变化,由于氮原子与氧原子均为加速燃烧的重要活性粒子,这些基团的产生使得甲烷更容易发生一系列链式氧化反应。定常激励产生的活性粒子浓度大于未经过等离子体激励及非定常激励下所产生的活性粒子浓度;经过等离子体激励后火焰根部更靠近燃烧器喷嘴底部,说明等离子体激励产生的活性粒子加速了链式反应的进行,缩短了点火迟滞时间.     

High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching

An atomic-level controlled etching(ACE)technology is invstigated for the fabrication of recessed gate AlGaN/GaN high-electron-mobility transistors(HEMTs)with high power added efficiency.We compare the recessed gate HEMTs with conventional etching(CE)based chlorine,Cl₂-only ACE and BCl³/Cl₂ACE,respectively.The mixed radicals of BCl₃/Cl₂were used as the active reactants in the step of chemical modification.For ensuring precise and controllable etching depth and low etching damage,the kinetic energy of argon ions was accurately controlled.These argon ions were used precisely to remove the chemical modified surface atomic layer.Compared to the HEMTs with CE,the characteristics of devices fabricated by ACE are significantly improved,which benefits from significant reduction of etching damage.For BCl₃/Cl₂ACE recessed HEMTs,the load pull test at 17 GHz shows a high power added efficiency(PAE)of 59.8%with an output power density of 1.6 W/mm at Vd=10 V,and a peak PAE of 44.8%with an output power density of 3.2 W/mm at Vd=20 V in a continuous-wave mode.     

OGY方法的改进及证明

ＯＧＹ方法是混沌控制最重要的方法·通过选取系统参数的小变化，使双曲不动点变“稳定”·本文改进了ＯＧＹ方法中的参数选取方法，并且完成了对ＯＧＹ方法的严格证明