| In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT |
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| 作者姓名： | 宓珉瀚 武盛 杨凌 何云龙 侯斌 张濛 郭立新 马晓华 郝跃 |
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| 作者单位： | Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices;School of Advanced Materials and Nanotechnology;School of Physics and Optoelectronic Engineering |
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| 基金项目： | Project supported by the China Postdoctoral Science Foundation(Grant No.2018M640957);the Fundamental Research Funds for the Central Universities,China(Grant No.20101196761);the National Natural Science Foundation of China(Grant No.61904135);the National Defense Pre-Research Foundation of China(Grant No.31513020307)。 |
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| 摘 要： | The etch-stop structure including the in-situ SiN and AlGaN/GaN barrier is proposed for high frequency applications.The etch-stop process is realized by placing an in-situ SiN layer on the top of the thin AlGaN barrier.F-based etching can be self-terminated after removing SiN,leaving the AlGaN barrier in the gate region.With this in-situ SiN and thin barrier etch-stop structure,the short channel effect can be suppressed,meanwhile achieving highly precisely controlled and low damage etching process.The device shows a maximum drain current of 1022 mA/mm,a peak transconductance of 459 mS/mm,and a maximum oscillation frequency(fmax)of 248 GHz.
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| 关 键 词： | AlGaN/GaN IN-SITU SIN etch-stop barrier |
In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT |
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| Min-Han Mi,Sheng Wu,Ling Yang,Yun-Long He,Bin Hou,Meng Zhang,Li-Xin Guo,Xiao-Hua Ma,Yue Hao.In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT[J].Chinese Physics B,2020(4):430-433. |
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| Authors: | Min-Han Mi Sheng Wu Ling Yang Yun-Long He Bin Hou Meng Zhang Li-Xin Guo Xiao-Hua Ma Yue Hao |
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| Institution: | (Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China;School of Advanced Materials and Nanotechnology,Xidian University,Xi'an 710071,China;School of Physics and Optoelectronic Engineering,Xidian University,Xi'an 710071,China) |
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| Abstract: | The etch-stop structure including the in-situ SiN and AlGaN/GaN barrier is proposed for high frequency applications.The etch-stop process is realized by placing an in-situ SiN layer on the top of the thin AlGaN barrier. F-based etching can be self-terminated after removing SiN, leaving the AlGaN barrier in the gate region. With this in-situ SiN and thin barrier etch-stop structure, the short channel effect can be suppressed, meanwhile achieving highly precisely controlled and low damage etching process. The device shows a maximum drain current of 1022 mA/mm, a peak transconductance of 459 mS/mm, and a maximum oscillation frequency (f_(max)) of 248 GHz. |
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