N,N-二(2-苯并咪唑亚甲基)甲胺高氯酸盐的晶体和电子结构

合成了三齿配体N,N-二(2-苯并咪唑亚甲基)甲胺(MN3)的高氯酸盐.对该化合物进行了元素分析、紫外和红外表征;采用X射线衍射方法测定了该化合物的晶体结构,依据晶体结构数据使用G98程序对配体(MN3)进行了量子化学计算.     

稀土改质催化剂对废食用油制备燃料油的影响

利用浸渍法制备稀土改质催化剂,用于废食用油脂催化裂解的裂解气催化改质。考察了催化剂活性组分含量、硅铝比、焙烧温度、改质反应温度对产物组成、烯烃含量及收率的影响。得最佳条件:ZSM-5作为催化剂载体,催化剂活性组分镧稀土含量为6%,催化剂焙烧温度为550℃,改质反应温度为360℃。在最佳条件下催化改质,燃料油烯烃含量降低了34.3%,汽油含量提高了14.36%,轻柴油含量提高了1.67%,重柴油含量下降了6.72%,重油含量下降了2.2%,燃料油总收率提高了7.12%,油品质显著提高。     

衬底对Cu(In,Ga)Se2薄膜织构的影响

分别在苏打石灰玻璃、Mo箔、无择优取向的Mo薄膜以及(110)择优取向的Mo薄膜四种不同衬底上，采用共蒸发工艺沉积约2 μm厚的Cu(In,Ga)Se₂薄膜，用X射线衍射仪测量薄膜的织构，研究衬底对Cu(In,Ga)Se₂薄膜织构的影响.在以上四种衬底上沉积的Cu(In,Ga)Se₂薄膜的(112)衍射峰强度依次逐渐减弱，(220/204)衍射峰从无到有且强度逐渐增强.在苏打石灰玻璃和Mo箔衬底上的Cu(In,Ga)Se_{2关键词： 择优取向 Cu(In 2}薄膜')" href="#">Ga)Se₂薄膜 太阳电池     

预制层溅射气压对CIGS薄膜结构及器件的影响

研究了金属预制层制备过程中溅射气压对Cu(In_1-xGa_x)Se₂(CIGS)薄膜及电池器件性能的影响.通过调节溅射气压改变预制层的结晶状态及疏松度与粗糙度,在合适的预制层结构下,活性硒化热处理过程中,可使Ga有效地掺入到薄膜中形成优质的CIGS固溶体.高溅射气压会使预制层过于致密,呈现非晶态趋势.经活性硒化热处理后,CIGS薄膜容易产生CIS与CGS"两相分离"现象,从而导致CIGS薄膜太阳电池的开路电压和填充因子降低,电池转换效率由10.03%降低到5.02%.     

热裂解活化硒对CIGS太阳电池开路电压的影响

考察了通过自主研发的高温热裂解辅助硒化装置所产生的高活性硒对CIGS薄膜结构和器件性能的影响.通过调节高温裂解系统的温度可以有效调节不同的硒活性.研究发现, 第一台阶HC-Se气氛可以提高CIGS薄膜表面的Ga含量, 使得CIGS薄膜内的Ga分布更加平缓, 进而提高CIGS薄膜表面禁带宽度.而且HC-Se气氛可以消除CIGS"两相分离"现象.两种因素的共同作用使得CIGS薄膜太阳电池的开路电压提高了34.6%.电池转换效率从6.02%提升至8.76%, 增长了45.5%.     

Preparation of Cu（In,Ga）Se2 Thin Film Solar Cells by Selenization of Metallic Precursors in an Ar Atmosphere

Cu（In, Ga）Se2 thin films are deposited on Mo-coated glass substrates by Se vapour selenization of sputtered metallic precursors in the atmosphere of Ar gas flow under a pressure of about 10 Pa. The in situ heat treatment of as-grown precursor leads to the formation of a better alloy. During selenization, the growth of CuInSe2 phase preferably proceeds through Se-poor phases as CuSe and InSe at relatively low substrate temperature of 250℃, due to the absence of In2Se3 at intermediate stage at low reactor pressure. Subsequently, the Cu（In,Ga）Se2 phase is produced by the reactive diffusion of CuInSe2 with a Se-poor GaSe phase at high temperature of up to 560℃. The final film exhibits smooth surface and large grain size. The absorber is used to fabricate a glass/Mo/Cu（In, Ga）Se2/CdS/ZnO cell with the total-area efficiency of about 7%. The low open-circuit voltage value of the cell fabricated should result from the nonuniform distribution of In and Ga in the absorber, due to the diffusion-controlled reaction during the phase formation. The films, as well as devices, are characterized.     

氦原子高激发态的塞曼效应

利用塞曼哈密顿的球张量形式以及塞曼哈密顿在耦合表象中的矩阵元公式,在考虑磁场二次项作用的基础上,研究了氦原子n3P(n=4,5)高激发态的塞曼效应,给出解析解,并绘出了塞曼能级分裂图.     

Ca^2＋对KDP晶体的光损伤阈值的影响

Ca2 是KDP原料中一种常见的杂质离子,这种杂质不仅会影响晶体的生长过程,而且会加重晶体的光散射.通过传统降温法和点籽晶快速生长法生长不同Ca2 掺杂浓度的KDP晶体样品,对样品进行激光损伤实验,结果表明,Ca2 的存在降低了KDP晶体的光损伤阈值,其原因主要在于Ca2 掺杂导致晶体内部缺陷增多,内应力增加以及晶体中的散射颗粒密度增大使晶体光吸收加重.     

Mo Back Contact for Flexible Polyimide Substrate Cu（In,Ga）Se2 Thin-Film Solar Cells

A dc magnetic sputtering process is applied to growth of a Mo back. contact layer onto the flexible polyimide （PI） and rigid soda-lime glass （SLC） substrates. The structural and electrical properties of the Mo layer coated on the two kinds of substrates are investigated by x-ray diffraction （XRD） and Hall effect measurements. The results show that the Mo layer on SLG indicate more better crystal quality and lower resistivity than that on the PI sheets. In contrast to the SLG substrate, the resistivity of the Mo layer on PI is increased by the vacuum annealing process at the substrate temperature of 450℃ under Se atmosphere, which is attributed to the cracked Mo layer induced by the mismatch of the coefficient of thermal expansion between PI and Mo material. The Cu（In,Ga）Se2 （CIGS） solar cells based on the PI and SLO substrates show the best conversion efficiencies of 8.16% and 10.98% （active area, 0.2cm^2）, respectively. The cell efficiency of flexible CIGS solar cells on PI is limited by its relatively lower fill factor caused by the Mo back contact.     

基于物理中面FGM板屈曲的有限元分析

基于物理中面的概念，根据最小势能原理推导了功能梯度材料FGM薄板屈曲的有限元控制方程，求得临界荷载的有限元解。利用FGM板的屈曲方程与参考均匀板的屈曲方程之间的相似性，建立了FGM板的临界荷载与参考均匀板的临界荷载之间的相似转换关系式，从而将FGM板临界荷载的计算转变为参考均匀板的临界荷载和材料不均匀系数的计算，极大地提高了计算效率，为FGM的推广起积极的推动作用。通过数值算例，将由有限元法和转换关系式得到的临界荷载进行了比较，并讨论了边界条件、荷载工况、材料组成和几何尺寸等对FGM板临界荷载的影响。