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热裂解活化硒对CIGS太阳电池开路电压的影响
引用本文:李光旻,刘玮,林舒平,李晓东,周志强,何青,张毅,刘芳芳,孙云.热裂解活化硒对CIGS太阳电池开路电压的影响[J].发光学报,2015,36(11):1289-1293.
作者姓名:李光旻  刘玮  林舒平  李晓东  周志强  何青  张毅  刘芳芳  孙云
作者单位:1. 天津城建大学理学院 应用物理系, 天津 300084; 2. 南开大学电子信息与光学工程学院 光电子薄膜与器件研究所, 天津 300071
基金项目:国家自然科学基金(61076061)资助项目
摘    要:考察了通过自主研发的高温热裂解辅助硒化装置所产生的高活性硒对CIGS薄膜结构和器件性能的影响.通过调节高温裂解系统的温度可以有效调节不同的硒活性.研究发现, 第一台阶HC-Se气氛可以提高CIGS薄膜表面的Ga含量, 使得CIGS薄膜内的Ga分布更加平缓, 进而提高CIGS薄膜表面禁带宽度.而且HC-Se气氛可以消除CIGS"两相分离"现象.两种因素的共同作用使得CIGS薄膜太阳电池的开路电压提高了34.6%.电池转换效率从6.02%提升至8.76%, 增长了45.5%.

关 键 词:CIGS  热裂解活化硒  开路电压
收稿时间:2015-08-01

Influence of Thermal Cracking Selenium on The Open-circuit Voltage of CIGS Solar Cells
LI Guang-min,LIU Wei,LIN Shu-ping,LI Xiao-dong,ZHOU Zhi-qiang,HE Qing,ZHANG Yi,LIU Fang-fang,SUN Yun.Influence of Thermal Cracking Selenium on The Open-circuit Voltage of CIGS Solar Cells[J].Chinese Journal of Luminescence,2015,36(11):1289-1293.
Authors:LI Guang-min  LIU Wei  LIN Shu-ping  LI Xiao-dong  ZHOU Zhi-qiang  HE Qing  ZHANG Yi  LIU Fang-fang  SUN Yun
Institution:1. Physics Department, School of Science, Tianjin Chengjian University, Tianjin 300384, China; 2. Institute of Photoelectronic Thin Film Devices and Technology and Tianjin Key Laboratory of Thin Film Devices and Technology, Nankai University, Tianjin 300071, China
Abstract:The influence of cracking selenium on the structure and device parameters of Cu(In1-xGax)-Se2 (CIGS) thin films was investigated. The activity of cracked selenium can be controlled by moderating the temperature of thermal cracking system employed in our self-designed selenization furnace. The HC-Se atmosphere can enhance the Ga concentration on the film surface and increase the band-gap energy of the CIGS film surface. In addition, HC-Se atmosphere can alleviate the "phase separation". Consequently, Voc value of the solar cell increases about 34.6%. The device conversion efficiency using the novel thermal-cracking system increases by about 45.5% from 6.02% to 8.76%.
Keywords:CIGS  thermal-cracking selenium  open-circuit voltage
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